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N-CHANNEL 600V 0.25 TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET TYPE
Top Searches for this datasheetSTP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 N-CHANNEL 600V 0.25 TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 VDSS RDS(on) 0.29 0.29 0.29 0.29 TYPICAL RDS(on) 0.25 HIGH dv/dt AVALANCHE CAPABILITIES 100% AVALANCHE TESTED INPUT CAPACITANCE GATE CHARGE GATE INPUT RESISTANCE TO-220 TO-220FP DESCRIPTION MDmeshis revolutionary MOSFET technology that associates Multiple Drain process with Company's PowerMESHhorizontal layout. resulting product outstanding on-resistance, impressively high dv/dt excellent avalanche characteristics. adoption Company's proprietary strip technique yields overall dynamic performance that significantly better than that similar competition's products. APPLICATIONS MDmeshfamily very suitable increasing power density high voltage converters allowing system miniaturization higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDGR PTOT dv/dt(1) VISO Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature I2PAK D2PAK INTERNAL SCHEMATIC DIAGRAM Value STP(B)20NM60(-1) 12.6 --65 (1)ISD 20A, di/dt 400A/µs, (BR)DSS, TJMAX. (*)Limited only maximum temperature allowed Unit STP20NM60FP 20(*) 12.6(*) 80(*) 0.36 2500 W/°C V/ns width limited safe operating area February 2002 1/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 THERMAL DATA TO-220/D 2PAK/I2PAK Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient 0.65 62.5 TO-220FP °C/W °C/W Maximum Lead Temperature Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED) Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±30V Min. ±100 Typ. Max. Unit Symbol VGS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, 250µA 10V, Min. Typ. 0.25 Max. 0.29 Unit DYNAMIC Symbol Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance 400V Gate Bias=0 Test Signal Level=20mV Open Drain Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. 1500 Max. Unit Pulsed: Pulse duration duty cycle Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS. 2/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 200V, (see test circuit, Figure 400V, 20A, Min. Typ. Max. Unit SWITCHING Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Condit ions 480V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit SOURCE DRAIN DIODE Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs, 100V, 25°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. Safe Operating Area TO-220/D2PAK/I2PAK Safe Operating Area TO-220FP 3/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 Thermal Impedance TO-220/D2PAK/I2PAK Thermal Impedance TO-220FP Output Characteristics Tranfer Characteristics Tranconductance Static Drain-Source Resistance 4/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 Gate Charge Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage Temp. Normalized Resistance Temperature Source-drain Diode Forward Characteristics 5/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform Fig. Switching Times Test Circuits Resistive Load Fig. Gate Charge test Circuit Fig. Test Circuit Inductive Load Switching Diode Recovery Times 6/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 TO-220 MECHANICAL DATA DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 Dia. P011C 7/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 TO-220FP MECHANICAL DATA DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 8/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 TO-262 (I2PAK) MECHANICAL DATA MIN. 2.49 1.14 0.45 1.23 8.95 13.1 3.48 1.27 TYP. MAX. 2.69 0.93 1.36 9.35 10.4 13.6 3.78 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055 DIM. P011P5/E 9/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 D2PAK MECHANICAL DATA DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 0.015 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 10/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 FOOTPRINT TUBE SHIPMENT suffix)* TAPE REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. MIN. 12.8 20.2 24.4 30.4 13.2 26.4 MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 23.7 inch MAX. MIN. MAX. 10.7 0.413 0.421 15.9 1.61 1.85 11.6 12.1 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 BASE 1000 0.35 0.0098 0.0137 24.3 0.933 0.956 11/12 sales type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 2000 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A. http://www.st.com 12/12 Other recent searchesS10VT60 - S10VT60 S10VT60 Datasheet ML4412 - ML4412 ML4412 Datasheet LSI40909H - LSI40909H LSI40909H Datasheet LM40X21B - LM40X21B LM40X21B Datasheet BZX55B - BZX55B BZX55B Datasheet APTM100TDU35PG - APTM100TDU35PG APTM100TDU35PG Datasheet 2SB1555 - 2SB1555 2SB1555 Datasheet 2SA1806J - 2SA1806J 2SA1806J Datasheet
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