N-CHANNEL 500V 0.20 TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET TYPE

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N-CHANNEL 500V 0.20 TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET TYPE

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STP20NM50 STP20NM50FP STB20NM50 STB20NM50-1
N-CHANNEL 500V 0.20 TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET
TYPE STP20NM50/FP STB20NM50 STB20NM50-1
VDSS 500V 500V 500V
RDS(on) <0.25 <0.25 <0.25
TYPICAL RDS(on) 0.20 HIGH dv/dt AVALANCHE CAPABILITIES 100% AVALANCHE TESTED INPUT CAPACITANCE GATE CHARGE GATE INPUT RESISTANCE TIGHT PROCESS CONTROL HIGH MANUFACTURING YIELDS
D2PAK TO-220
TO-220FP
(Tabless TO-220)
DESCRIPTION MDmeshis revolutionary MOSFET technology that associates Multiple Drain process with Company's PowerMESHhorizontal layout. resulting product outstanding on-resistance, impressively high dv/dt excellent avalanche characteristics. adoption Company's proprietary strip technique yields overall dynamic performance that significantly better than that similar competition's products. APPLICATIONS MDmeshfamily very suitable increasing power density high voltage converters allowing system miniaturization higher efficiencies. ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT dv/dt(1) VISO Tstg June 2002 Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value STP(B)20NM50(-1) 12.6 --65
(1)ISD 20A, di/dt 400A/µs, V(BR)DSS, TJMAX. (*)Limited only maximum temperature allowed
Unit STP20NM50FP 20(*) 12.6(*) 80(*) 0.36 2000 W/°C V/ns 1/12
width limited safe operating area
THERMAL DATA
TO-220/I PAK/ Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient 0.65 62.5 TO-220FP °C/W °C/W
Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±30V Min. ±100 Typ. Max. Unit
Symbol VGS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, 250µA 10V, Min. Typ. 0.20 Max. 0.25 Unit
DYNAMIC
Symbol Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance 400V Gate Bias=0 Test Signal Level=20mV Open Drain Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. 1480 Max. Unit
Pulsed: Pulse duration duty cycle Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS.
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ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 250V, (see test circuit, Figure 400V, 20A, Min. Typ. Max. Unit
SWITCHING
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Condit ions 400V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs, 60V, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
Safe Operating Area TO-220
Safe Operating Area TO-220FP
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Thermal Impedance TO-220 Thermal Impedance TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
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Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Thereshold Voltage Temp.
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
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Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
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TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
Dia.
P011C
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D2PAK MECHANICAL DATA
DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 0.015 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
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TO-220FP MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
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TO-262 (I2PAK) MECHANICAL DATA
MIN. 2.49 1.14 0.45 1.23 8.95 13.1 3.48 1.27 TYP. MAX. 2.69 0.93 1.36 9.35 10.4 13.6 3.78 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055
DIM.
P011P5/E
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FOOTPRINT
TUBE SHIPMENT suffix)*
TAPE REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. MIN. 12.8 20.2 24.4 30.4 13.2 26.4 MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 23.7 inch MAX. MIN. MAX. 10.7 0.413 0.421 15.9 1.61 1.85 11.6 12.1 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574
BASE 1000
0.35 0.0098 0.0137 24.3 0.933 0.956
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sales type
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N-CHANNEL 500V 0.20 TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET TYPE

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