N-CHANNEL 500V 0.23 TO-220/D2PAK/TO-247 Zener-Protected SuperMESHTMPow

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N-CHANNEL 500V 0.23 TO-220/D2PAK/TO-247 Zener-Protected SuperMESHTMPow

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STP20NK50Z STW20NK50Z STB20NK50Z
N-CHANNEL 500V 0.23 TO-220/D2PAK/TO-247 Zener-Protected SuperMESHTMPower MOSFET
TYPE STB20NK50Z STP20NK50Z STW20NK50Z
VDSS
RDS(on) 0.27 0.27 0.27
TYPICAL RDS(on) 0.23 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTEDGATE CHARGE MINIMIZED VERY INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
TO-220
TO-247
D2PAK
DESCRIPTION SuperMESHseries obtained through extreme optimization ST's well established stripbased PowerMESHlayout. addition pushing on-resistance significantly down, special care taken ensure very good dv/dt capability most demanding applications. Such series complements full range high voltage MOSFETs including revolutionary MDmeshproducts.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL OFF-LINE POWER SUPPLIES, ADAPTORS
ORDERING INFORMATION
SALES TYPE STB20NK50ZT4 STP20NK50Z STW20NK50Z MARKING B20NK50Z P20NK50Z W20NK50Z PACKAGE D2PAK TO-220 TO-247 PACKAGING TAPE REEL TUBE TUBE
September 2003
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STP20NK50Z STB20NK50Z STW20NK50Z
ABSOLUTE MAXIMUM RATINGS
Value Symbol VDGR PTOT VESD(G-S) dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Gate source ESD(HBM-C=100 R=1.5 Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 4000 1.51 6000
STP20NK50Z STB20NK50Z STW20NK50Z
Unit
10.71
W/°C V/ns
Pulse width limited safe operating area 20A, di/dt 200A/µs, V(BR)DSS, JMAX. Limited only maximum temperature allowed
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 0.66 62.5 °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
GATE-SOURCE ZENER DIODE
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± (Open Drain) Min. Typ. Max. Unit
PROTECTION FEATURES GATE-TO-SOURCE ZENER DIODES built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate source. this respect Zener voltage appropriate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
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STP20NK50Z STB20NK50Z STW20NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Rating Rating, VGS, 10V, 3.75 0.23 Min. 0.27 Typ. Max. Unit
DYNAMIC
Symbol Ciss Coss Crss Coss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 25V, MHz, Min. Typ. 2600 Max. Unit
640V
SWITCHING
Symbol td(on) Test Conditions (Resistive Load see, Figure Min. Typ. 15.5 Max. Unit
SWITCHING
Symbol td(off) tr(Voff) Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions (Resistive Load see, Figure 4.7, (Inductive Load see, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs 150°C (see test circuit, Figure 5.72 Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS.
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STP20NK50Z STB20NK50Z STW20NK50Z
Safe Operating Area TO-220/TO-247/D2PAK Thermal Impedance TO-220/TO-247/D2PAK
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
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STP20NK50Z STB20NK50Z STW20NK50Z
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage Temp.
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS Temperature
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Maximum Avalanche Energy Temperature
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STP20NK50Z STB20NK50Z STW20NK50Z
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
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STP20NK50Z STB20NK50Z STW20NK50Z
TO-220 MECHANICAL DATA
MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
DIM.
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STP20NK50Z STB20NK50Z STW20NK50Z
D2PAK MECHANICAL DATA
DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
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STP20NK50Z STB20NK50Z STW20NK50Z
TO-247 MECHANICAL DATA
MIN. 4.85 2.20 0.40 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 3.55 3.65 0.14 0.07 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05
DIM.
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STP20NK50Z STB20NK50Z STW20NK50Z
D2PAK FOOTPRINT
TUBE SHIPMENT suffix)*
TAPE REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137
BASE 1000
sales type
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STP20NK50Z STB20NK50Z STW20NK50Z
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 2003 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States. http://www.st.com
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N-CHANNEL 500V 0.23 TO-220/D2PAK/TO-247 Zener-Protected SuperMESHTMPow

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