SVC333 Diffused Junction Type Silicon Diode Varactor Diode (

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SVC333 Diffused Junction Type Silicon Diode Varactor Diode (

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Ordering number:EN935B
SVC333
Diffused Junction Type Silicon Diode
Varactor Diode (IOCAP) Receiver Electronic Tuning
Features
SVC333 small sized variable capacitance diode designed electronic tuning. This diode works high tuning voltage high sufficiently high capacitance ratio approximately linear change with
Package Dimensions
unit:mm 1184
[SVC333]
C:Cathode A:Anode SANYO:SPA
Specifications
Absolute Maximum Ratings 25°C
Parameter Reverse Voltage Forward Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol Tstg Conditions Ratings +125 Unit
Electrical Characteristics 25°C
Parameter Breakdown Voltage Reverse Current Interterminal Capacitance Symbol V(BR)R C3.0V C10V C18V C25V Quality Factor Capacitance Ratio Matching Tolerance Conditions IR=10µA VR=30V VR=3.0V, f=1MHz, vi=20Vrns VR=10V, f=1MHz, vi=20Vrns VR=18V, f=1MHz, vi=20Vrns VR=25V, f=1MHz, vi=20Vrns VR=3.0V, f=1MHz C3.0V/C25V (Cmax-Cmin)/Cmin, VR=2.0 Ratings 345.0 85.12 35.36 18.92 15.00 19.00 0.02 408.4 127.9 53.91 25.61 Unit
*:The SVC333 classified C3.0V, C25V follow:
Rank C3.0V(pF) 345.0 379.1 371.7 408.4 C25V(pF) 18.92 25.23 19.20 25.61
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62098HA (KT)/1289MO/O211KI, No.935-1/4
SVC333
Address Capacitance Value
VR=3.0V Address Capacitance (pF) 345.0 351.9 350.2 357.2 355.4 362.5 360.8 368.0 366.2 373.5 371.7 379.1 377.3 384.8 382.9 390.6 388.6 396.4 394.5 402.4 400.4 408.4 Address VR=10V Capacitance (pF) 85.12 86.82 86.39 88.12 87.69 89.44 89.01 90.79 90.34 92.15 91.70 93.53 93.08 94.94 94.46 96.35 95.89 97.81 97.33 99.27 98.78 100.8 100.2 102.3 101.7 103.8 103.3 105.4 104.8 106.9 106.4 108.6 108.0 110.2 109.6 111.8 111.3 113.5 112.9 115.2 114.6 116.9 116.4 118.7 118.1 120.5 119.9 122.3 121.7 124.1 123.5 126.0 125.4 127.9 Address VR=18V Capacitance (pF) 35.36 36.07 35.89 36.61 36.43 37.16 36.98 37.72 37.54 38.29 38.09 38.86 38.66 39.44 39.24 40.03 39.83 40.63 40.43 41.24 41.04 41.86 41.66 42.49 42.27 43.12 42.91 43.77 43.56 44.43 44.21 45.09 44.88 45.78 45.55 46.46 46.22 47.15 46.92 47.86 47.63 48.58 48.34 49.31 49.07 50.05 49.81 50.80 50.55 51.56 51.31 52.34 52.08 53.12 52.86 53.91 Address VR=25V Capacitance (pF) 18.92 19.30 19.20 19.59 19.49 19.88 19.79 20.19 20.08 20.48 20.38 20.79 20.69 21.10 21.00 21.42 21.32 21.74 21.64 22.07 21.95 22.39 22.28 22.73 22.62 23.08 22.96 23.42 23.30 23.77 23.66 24.13 24.01 24.49 24.37 24.86 24.74 25.23 25.11 25.61
Rank Width
No.935-2/4
SVC333
No.935-3/4
SVC333
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property loss. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information June, 1998. Specifications information herein subject change without notice.
No.935-4/4

SVC333 Diffused Junction Type Silicon Diode Varactor Diode (

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