N-CHANNEL 250V 0.23 TO-220 TO-220FP MESH OVERLAYMOSFET TYPE STP16

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N-CHANNEL 250V 0.23 TO-220 TO-220FP MESH OVERLAYMOSFET TYPE STP16

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STP16NS25 STP16NS25FP
N-CHANNEL 250V 0.23 TO-220 TO-220FP MESH OVERLAYMOSFET
TYPE STP16NS25 STP16NS25FP
VDSS
RDS(on) 0.28 0.28
TYPICAL RDS(on) 0.23 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
TO-220
TO-220FP
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, STMicroelectronics designed advanced family power MOSFETs with outstanding performance. patented STrip layout coupled with Company's proprietary edge termination structure, makes suitable coverters lighting applications.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS TELECOM, INDUSTRIAL, LIGHTING EQUIPMENT IDEAL MONITOR's FUNCTION
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT dv/dt VISO Tstg Parameter STP16NS25 Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
16A, di/dt300 A/µs, V(BR)DSS, TjTjMAX Limited only maximum temperature allowed
Value STP16NS25FP 2500 16(*) 11(*) 64(*) 0.33
Unit W/°C V/ns
width limited safe operating area
2002
STP16NS25 STP16NS25FP
THERMAL DATA
TO-220 Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 62.5 TO-220FP °C/W °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-body Leakage Current (VDS Test Conditions Rating Rating, Min. ±100 Typ. Max. Unit
Symbol VGS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, 250µA 10V, Min. Typ. 0.23 Max. 0.28 Unit
DYNAMIC
Symbol Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. 1270 Max. Unit
STP16NS25 STP16NS25FP
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions (see test circuit, Figure 200V, Min. Typ. 14.5 22.3 Max. Unit
SWITCHING
Symbol td(Voff) tr(Voff) Parameter Turn-off- Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Condit ions 125V, 4.7, (see test circuit, Figure Vclamp 200V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs 30V, 150°C (see test circuit, Figure 11.4 Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
Safe Operating Area TO-220
Safe Operating Area TO-220FP
STP16NS25 STP16NS25FP
Thermal Impedance TO-220 Thermal Impedance TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
STP16NS25 STP16NS25FP
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Thereshold Voltage Temp.
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STP16NS25 STP16NS25FP
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STP16NS25 STP16NS25FP
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
Dia.
P011C
STP16NS25 STP16NS25FP
TO-220FP MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
STP16NS25 STP16NS25FP
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 2002 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States. http://www.st.com

N-CHANNEL 250V 0.23 TO-220 TO-220FP MESH OVERLAYMOSFET TYPE STP16

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