N-CHANNEL 800V TO-247 Zener-Protected PowerMESHIII MOSFET TYPE ST

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N-CHANNEL 800V TO-247 Zener-Protected PowerMESHIII MOSFET TYPE ST

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STW7NC80Z
N-CHANNEL 800V TO-247 Zener-Protected PowerMESHIII MOSFET
TYPE STW7NC80Z
VDSS
RDS(on)
TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
TO-247
DESCRIPTION third generation MESH OVERLAYPower MOSFETs very high voltage exhibits unsurpassed on-resistance unit area while integrating back-to-back Zener diodes between gate source. Such arrangement gives extra capability with higher ruggedness performance requested large variety single-switch applications. APPLICATIONS SINGLE-ENDED SMPS MONITORS, COMPUTER INDUSTRIAL APPLICATION WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT VESD(G-S) dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15K) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 1.28 Unit W/°C V/ns
width limited safe operating area (1)I di/dt 100A/µs, V(BR)DSS, TJMAX.
July 2000
STW7NC80Z
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose 0.78 °C/W °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS BVDSS/TJ IDSS IGSS Parameter Drain-source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±20V Min. Typ. Max. Unit V/°C
Symbol VGS(th) DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test Conditions VGS, 250µA 10V, ID(on) RDS(on)max, Min. Typ. Max. Unit
DYNAMIC
Symbol Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance 25V, MHz, Test Conditions ID(on) RDS(on)max, Min. Typ. 1600 Max. Unit
STW7NC80Z
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING (RESISTIVE LOAD)
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 640V, Test Conditions 400V, (see test circuit, Figure Min. Typ. Max. Unit
SWITCHING (INDUCTIVE LOAD)
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Condit ions 640V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs, 100V, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
GATE-SOURCE ZENER DIODE
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Voltage Thermal Coefficient Dynamic Resistance Test Conditions Igs=± (Open Drain) T=25°C Note(3) Min. Typ. Max. Unit 10-4/°C
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. (25°-T) BVGSO(25°)
PROTECTION FEATURES GATE-TO-SOURCE ZENER DIODES built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate souce. this respect Zener voltage appropiate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
STW7NC80Z
Safe Operating Area Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
STW7NC80Z
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage Temp.
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STW7NC80Z
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STW7NC80Z
TO-247 MECHANICAL DATA
DIM. MIN. 15.3 19.7 14.2 34.6 0.079 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
P025P
STW7NC80Z
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 2000 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A. http://www.st.com

N-CHANNEL 800V TO-247 Zener-Protected PowerMESHIII MOSFET TYPE ST

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