Wide Band Power GaAs Field Effect Transistor Description EC5
|
|
|
Top Searches for this datasheet
EC5724
Wide Band Power
GaAs Field Effect Transistor Description
EC5724 device,available chip form, power GaAs Field Effect Transistor, designed wideband oscillator amplifier applications, 18GHz. Individual hole connection made between each source gold plated back face metallization, through 25µm thick GaAs substrate. 0.5µm Aluminium gates protected layer silicon nitride. available chip form.
Main Features
Output power compression point Single cell (600µm) 24dBm Four cells (2400µm) 30dBm Gain compression point Single cell (600µm) 18GHz Four cells (2400µm) 18GHz Chip size 1.52 0.51 0.065
Gate Drain Source
Main Characteristics
Tamb +25°C Symbol Idss P1dB Parameter Saturated drain current Output power gain compression Associated gain 1280 Unit
Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. DSEC57247003 Specifications subject change without notice
United Monolithic Semiconductors S.A.S.
Route B.P.46 91401 Orsay Cedex France Tel. (0)1 (0)1
EC5724
Electrical Characteristics
Tamb +25°C Symbol Parameter Test Conditions Idss Saturated drain current Pinch voltage Vds= Vgs=0V Vds= Ids=Idss/100 Vds= Ids=Idss/2 Vgsd=
Wide Band Power
Single cell
Four cells
Unit
1280
Transconductance
Igsd
Gate source/drain leakage current Channel-case thermal resistance
2400
°C/W
Dynamic characteristics
Tamb +25°C Symbol Parameter Test Conditions P1dB Output power gain compression Associated gain gain compression Power added efficiency Vds= 18GHz single cell: Ids= 110mA four cells: Ids= 440mA Single cell Four cells Unit
Ref. DSEC57247003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
Wide Band Power
Absolute Maximum Ratings
Tamb +25°C Symbol Parameter Drain source voltage Drain current single cell four cells Total power dissipation single cell four cells Tstg Gate source voltage Operating channel temperature Storage temperature range
EC5724
Values 1280 +175°C
Unit
Operation this device above these parameters cause permanent damage
Typical Scattering Parameters
Parameters, operating conditions single cell 110mA, including 0.10nH gate 0.20nH drain serie inductances Freq. -0.95 -1.04 -1.14 -1.18 -1.21 -1.23 -1.23 -1.23 -1.22 -1.19 -1.13 -1.09 -1.09 -1.11 -1.11 -1.12 -82.7 -99.5 -112.2 -122.3 -130.5 -137.4 -142.8 -147.3 -151.3 -154.6 -157.8 -161.3 -164.5 -167.2 -169.5 -171.8 -25.62 -25.26 -24.86 -24.75 -24.82 -25.01 -25.25 -25.51 -25.76 -25.99 -26.28 -26.61 -26.91 -27.17 -27.35 -27.41 36.2 25.6 16.9 -2.4 -6.9 -10.7 -13.8 -16.5 -19.2 -21.4 -22.1 -22.3 -23.0 -23.1 11.16 10.47 9.15 7.89 6.70 5.57 4.49 3.48 2.54 1.67 0.86 0.09 -0.65 -1.35 -2.00 -2.32 118.1 104.3 92.6 82.5 72.5 65.1 57.5 50.5 44.2 38.1 32.2 26.6 20.9 15.7 10.9 -5.57 -5.53 -5.35 -5.09 -4.77 -4.39 -4.02 -3.69 -3.37 -3.07 -2.82 -2.60 -2.35 -2.14 -1.98 -1.91 -51.5 -63.2 -73.3 -82.0 -89.6 -96.2 -102.4 -108.3 -113.2 -118.1 -122.9 -126.7 -130.1 -133.9 -137.7 -140.6
Ref. DSEC57247003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
EC5724
Typical results
Tamb +25°C Typical output power versus input power
Wide Band Power
Frequency Stability factor Frequency (GHz) (dB)
Ref. DSEC57247003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
Wide Band Power
Chip Mechanical Data
EC5724
Drain area Gate area Thickness
Recommended attach
1520+
Stage temperature 300°C (minimize temp. time whenever possible) Preforms Au/Sn (80/20) Atmosphere nitrogen forming flow
Recommended bonding
very pure gold wire (Thermal compression) bonder should properly grounded.
510+
dimensions
pure gold diameter
connect drain gate pads four cells
drain gate
drain gate
drain gate
drain gate
optimize attach shorten gate bonding length
4081
Optimum bonding
Ref. DSEC57247003 Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
EC5724
Wide Band Power
Ordering Information
Chip form EC5724-99X/0
Information furnished believed accurate reliable. However United Monolithic Semiconductors S.A.S. assumes responsability consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights United Monolithic Semiconductors S.A.S. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. United Monolithic Semiconductors S.A.S. products authorised critical components life support devices systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. DSEC57247003 Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
Other recent searches
uPD75028 - uPD75028 uPD75028 Datasheet
UL1077 - UL1077 UL1077 Datasheet
UL508 - UL508 UL508 Datasheet
SR3050CS - SR3050CS SR3050CS Datasheet
Rev01 - Rev01 Rev01 Datasheet
FP10R12W1T4 - FP10R12W1T4 FP10R12W1T4 Datasheet
DS9100 - DS9100 DS9100 Datasheet
66324 - 66324 66324 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
