Wide Band Power GaAs Field Effect Transistor Description EC4
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EC4790
Wide Band Power
GaAs Field Effect Transistor Description
EC4790 device,available chip form, power GaAs Field Effect Transistor, designed wideband oscillator amplifier applications, 18GHz Individual hole connection made between each source gold plated back face metallization, through 25µm thick GaAs substrate. 0.5µm Aluminium gates protected layer silicon nitride. available chip form.
Main Features
Output power compression point Single cell (450µm) 23dBm Both cells (900µm) 26dBm Gain compression point Single cell (450µm) 18GHz Both cells (900µm) 18GHz Chip size 0.71 0.47 0.065
Drain Gate Source
Main Characteristics (for both cells)
Tamb 25°C Symbol Idss P1dB Parameter Saturated drain current Output power gain compression Associated gain Unit
Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. DSEC47907003 Specifications subject change without notice
United Monolithic Semiconductors S.A.S.
Route B.P.46 91401 Orsay Cedex France Tel. (0)1 (0)1
EC4790
Electrical Characteristics
Tamb +25°C Symbol Parameter Test Conditions Idss Saturated drain current Pinch voltage Vds= Vgs=0V Vds= Ids=Idss/100 Vds= Ids=Idss/2 Vgsd=
Wide Band Power
Single cell
Both cells
Unit
Transconductance
Igsd
Gate source/drain leakage current Channel-case thermal resistance
°C/W
Dynamic characteristics
Tamb +25°C Symbol Parameter Test Conditions P1dB Output power gain compression Associated gain gain compression Power added efficiency Vds= 18GHz single cell: Ids= 80mA both cells: Ids= 160mA Single cell Both cells Unit
Ref. DSEC47907003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
Wide Band Power
Absolute Maximum Ratings
Tamb +25°C Symbol Parameter Drain source voltage Drain current single cell both cells Total power dissipation single cell both cells Tstg Gate source voltage Operating channel temperature Storage temperature range
EC4790
Values +175
Unit
Operation this device above these parameters cause permanent damage
Typical Scattering Parameters
Tamb +25°C Parameters, operating conditions single cell 80mA, including 0.15nH gate 0.25nH drain serie inductances Freq. -0.84 -1.03 -1.21 -1.34 -1.41 -1.47 -1.48 -1.54 -1.58 -1.58 -1.59 -1.59 -1.60 -1.60 -1.60 -72.1 -85.5 -97.2 -107.2 -115.9 -123.2 -129.7 -135.9 -141.5 -146.7 -152.2 -157.7 -162.2 -167.0 -171.7 -26.14 -25.36 -24.97 -24.85 -24.90 -24.98 -25.03 -25.09 -25.19 -25.35 -25.59 -25.85 -26.08 -26.21 -26.10 42.6 33.5 25.7 18.7 13.5 -1.7 -4.9 -7.5 -8.8 -9.5 -9.8 -11.3 9.24 8.48 7.60 6.70 5.85 5.05 4.35 3.66 2.96 2.30 1.62 1.00 0.39 -0.20 -0.69 119.3 107.5 97.0 87.4 78.6 70.3 62.9 55.5 48.4 41.3 34.7 27.9 21.7 15.9 -3.61 -3.68 -3.69 -3.62 -3.51 -3.37 -3.25 -3.10 -2.94 -2.76 -2.57 -2.37 -2.19 -2.05 -1.93 -42.0 -50.9 -58.8 -65.8 -71.7 -77.7 -83.7 -89.3 -95.2 -101.4 -106.2 -110.1 -114.2 -118.6 -122.4
Ref. DSEC47907003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
EC4790
Typical results
Typical Output Power versus Input Power
Wide Band Power
Frequency Stability factor Frequency (GHz) Maximum Stable gain (dB)
Ref. DSEC47907003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
Wide Band Power
Chip Mechanical Data
Drain area Gate area Thickness
EC4790
Recommended attach
+/-10
Stage temperature 300°C (minimize temp. time whenever possible) Preforms Au/Sn (80/20) Atmosphere nitrogen forming flow
Recommended bonding
+/-10
dimensions
very pure gold wire (thermal compression) bonder should properly grounded.
pure gold diameter
connect drain gate pads cells
drain gate
drain gate
optimize attach shorten gate bonding length
Optimum bonding cells
Ref. DSEC47907003
4392
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
EC4790
Wide Band Power
Ordering Information
Chip form EC4790-99X/00
Information furnished believed accurate reliable. However United Monolithic Semiconductors S.A.S. assumes responsability consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights United Monolithic Semiconductors S.A.S. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. United Monolithic Semiconductors S.A.S. products authorised critical components life support devices systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. DSEC47907003 Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
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