Wide Band Power GaAs Field Effect Transistor Description EC4
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EC4711
Wide Band Power
GaAs Field Effect Transistor Description
EC4711 band Schottky barrier Field Effect Transistor with 0.5µm Aluminium gate. Individual hole connection made between each source gold plated back face metallization, through 25µm thick GaAs substrate. 0.5µm Aluminium gates protected layer silicon nitride. available chip form.
Main Features
Output power compression point 21dBm@23Ghz 18dBm@30GHz Gain compression point 23ghz 30ghz Chip size 0.46 0.46 0.065
Source Drain Gate
Main Characteristics
Tamb +25°C Symbol Idss P1dB Parameter Saturated drain current Output power gain compression Associated gain Unit
Ref. DSEC47117003
Specifications subject change without notice
United Monolithic Semiconductors S.A.S.
Route B.P.46 91401 Orsay Cedex France Tel. (0)1 (0)1
EC4711
Wide Band Power
Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. DSEC47117003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
Wide Band Power
Electrical Characteristics
Tamb +25°C Symbol Idss Parameter Saturated drain current Test Conditions Idss/100 Idss/2 Vgsd
EC4711
Unit
Pinch voltage
-4.0
-3.0
-2.0
Transconductance
Igsd
Gate source/drain leakage current Channel-case thermal resistance
°C/W
Dynamic characteristics
Tamb +25°C Symbol P1dB Parameter Output power gain compression Associated gain gain compression Output power gain compression Associated gain gain compression Power added efficiency Test Conditions Vds= Ids= 50mA 23GHz Unit
P1dB
Vds= Ids= 50mA
18.5
30GHz
Ref. DSEC47117003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
EC4711
Absolute Maximum Ratings
Tamb +25°C Symbol Tstg Parameter Drain source voltage Drain current Gate source voltage Total power dissipation Operating channel temperature Storage temperature range
Wide Band Power
Values +175 +175
Unit
Operation device above these parameters cause permanent damage
Typical results
Tamb +25°C
Frequency Stability factor Frequency (GHz) (dB)
Ref. DSEC47117003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
Wide Band Power
Typical Scattering Parameters
EC4711
Parameters, operating conditions 80mA, including 0.15nH gate 0.25nH drain serie inductances Freq. -0.59 -0.65 -0.78 -0.92 -1.06 -1.19 -1.28 -1.33 -1.39 -1.44 -1.49 -1.53 -1.58 -1.64 -1.66 -52.9 -65.4 -75.1 -84.1 -99.4 -105.8 -112.3 -119 -125.2 -130 -133.4 -136.8 -139.5 -143.4 -26.40 -26.04 -25.31 -24.76 -24.34 -24.01 -23.72 -23.50 -23.35 -23.25 -23.16 -23.06 -22.94 -22.78 -22.70 52.4 49.1 42.8 36.9 31.6 27.5 23.8 20.1 16.1 13.3 10.9 7.16 7.06 6.67 5.69 4.74 3.83 3.36 2.89 2.49 2.18 1.99 1.92 124.7 116.2 100.5 93.4 86.8 80.2 73.1 66.6 60.9 56.4 51.6 47.4 42.9 -2.71 -2.77 -2.90 -2.99 -3.05 -3.10 -3.15 -3.18 -3.16 -3.09 -3.03 -3.01 -2.98 -2.93 -2.91 -25.8 -29.7 -34.7 -39.6 -44.3 -48.1 -52.4 -57.5 -62.6 -66.4 -70.0 -72.9 -75.8 -78.6 -81.1
Parameters, operating conditions 55mA, including 0.15nH gate 0.25nH drain serie inductances Freq. -1.29 -1.34 -1.42 -1.54 -1.61 -1.67 -1.72 -1.71 -1.73 -1.80 -1.77 -1.78 -1.77 -103.02 -116.37 -127.94 -141.31 -150.67 -159.36 -168.11 -170.39 -176.52 179.91 178.60 175.63 173.35 -24.99 -24.51 -24.22 -23.83 -23.46 -23.56 -24.45 -24.48 -24.44 -25.05 -25.15 -25.66 -26.17 28.76 20.16 16.14 10.13 4.60 -2.59 -12.29 -17.36 -21.64 -28.18 -29.94 -32.44 -34.35 5.96 5.07 4.16 3.58 2.33 1.71 0.15 -0.54 -1.22 -2.77 -3.40 -3.85 -4.47 93.26 79.70 68.83 55.64 40.10 28.34 13.13 4.03 -6.01 -19.14 -27.06 -32.37 -36.70 -3.46 -3.84 -4.55 -3.80 -3.60 -3.39 -2.98 -2.79 -2.48 -2.10 -1.88 -1.77 -1.43 -45.80 -54.90 -62.88 -72.76 -88.21 -98.83 -114.69 -126.03 -133.73 -148.77 -159.02 -163.22 -165.45
Ref. DSEC47117003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
EC4711
Wide Band Power
Parameters, operating conditions 70mA, including 0.15nH gate 0.25nH drain serie inductances Freq. -1.17 -1.20 -1.27 -1.37 -1.43 -1.47 -1.53 -1.52 -1.57 -1.54 -1.55 -1.53 -102.20 -115.54 -127.10 -140.51 -149.88 -158.62 -167.34 -175.84 -179.47 179.98 176.17 173.82 -25.27 -24.81 -24.54 -24.19 -23.92 -24.05 -25.07 -25.19 -25.96 -26.03 -26.74 -27.34 27.87 18.94 14.54 8.27 2.37 -5.42 -15.86 -25.62 -32.66 -32.13 -37.1 -39.49 6.51 5.84 4.75 4.21 3.04 2.26 0.94 -0.62 -1.94 -2.31 -3.18 -3.71 95.89 82.72 72.22 59.35 44.40 33.04 18.54 0.36 -12.05 -15.35 -24.47 -28.51 -3.75 -4.29 -4.89 -4.08 -3.91 -3.75 -3.28 -2.91 -2.37 -2.17 -2.11 -1.77 -46.51 -55.64 -63.84 -73.76 -89.21 -99.92 -115.66 -134.53 -149.39 -153.81 -163.69 -165.85
Parameters, operating conditions 55mA, including 0.15nH gate 0.25nH drain serie inductances Freq. -1.21 -1.26 -1.45 -1.50 -1.58 -1.63 -1.62 -1.63 -1.67 -1.66 -1.67 -1.66 -101.16 -114.54 -139.58 -145.74 -157.89 -166.71 -169.10 -175.25 -178.23 -179.47 176.76 174.42 -24.68 -24.19 -23.50 -23.32 -23.29 -24.18 -24.26 -24.25 -24.52 -24.99 -25.63 -26.17 28.73 19.79 8.97 5.22 -4.79 -14.97 -20.52 -24.83 -31.36 -31.44 -36.44 -38.57 6.35 5.48 4.01 3.03 2.13 0.59 -0.12 -0.79 -1.86 -2.66 -3.34 -3.95 96.08 82.90 59.47 48.97 33.11 18.58 9.98 0.44 -8.66 -15.24 -24.31 -28.36 -3.99 -4.55 -4.34 -4.00 -4.01 -3.51 -3.22 -3.12 -2.61 -2.36 -2.28 -1.93 -47.37 -56.57 -74.96 -85.10 -101.33 -117.02 -128.25 -135.85 -146.23 -155.00 -164.78 -166.91
Ref. DSEC47117003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
Wide Band Power
Chip Mechanical Data
0,46 ±0,08
EC4711
Thickness Recommended attach Stage temperature 300°C (minimize temp. time whenever possible) Preforms Au/Sn (80/20) Atmosphere nitrogen forming flow Recommended bonding very pure gold wire (thermal compression) bonder should grounded.
pure gold diameter
0,46
0,08
dimensions
properly
drain gate
optimize attach shorten gate bonding length
Optimum bonding
Ordering Information
Chip form EC4711-99X/00
Information furnished believed accurate reliable. However United Monolithic Semiconductors S.A.S. assumes responsability consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights United Monolithic Semiconductors S.A.S. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. United Monolithic Semiconductors S.A.S. products authorised critical components life support devices systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. DSEC47117003 Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
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