40GHz Super Noise HEMT AlGaAs/GaAs Field Effect Transistor Descri
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EC2827
40GHz Super Noise HEMT
AlGaAs/GaAs Field Effect Transistor Description
EC2827 Ka/K band Schottky barrier High Electron Mobility Transistor. This device based 0.25µm mushroom Aluminium gate associated with HEMT active layer passivated with SI3N4 layer. available chip form.
Main Features
minimum noise figure 18GHz minimum noise figure 40GHz 11dB associated gain 18GHz 6.5dB associated gain 40GHz Chip size 0.38 0.38 0.08 Drain Gate Source
Main Characteristics
Tamb +25°C Symbol Idss NFmin Parameter Saturated drain current Minimum noise figure Associated gain Unit
protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. DSEC28277003 Specifications subject change without notice
United Monolithic Semiconductors S.A.S.
Route B.P.46 91401 Orsay Cedex France Tel. (0)1 (0)1
EC2827
Tamb +25°C Symbol Idss Parameter Saturated drain current
40GHz Super Noise HEMT
Electrical Characteristics (single cell)
Test Conditions Vds= Vgs=0V Vds= Ids=Idss/100 Vds= Ids= Vgsd=
Unit
Pinch voltage
-1.0
-0.6
-0.2
Transconductance
Igsd
Gate source/drain leakage current
Dynamic characteristics (single cell)
Tamb +25°C Symbol Parameter Minimum noise figure Test Conditions F=18 F=30 Vds=2 Associated gain Ids=3 F=40 F=18 F=30 F=40 Unit
Dynamic characteristics (Both cells)
Symbol Parameter Minimum noise figure Associated gain Test Conditions Vds=2V Ids=6mA F=12 0.85 Unit
Ref. DSEC28277003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
40GHz Super Noise HEMT
Absolute Maximum Ratings
Tamb +25°C Symbol Tstg Parameter Drain source voltage Drain current Gate source voltage Operating channel temperature Storage temperature range Values +175
EC2827
Units
Operations this device above these parameters cause permanent damage
Typical Scattering Parameters
Tamb +25°C (minimum noise figure) Freq. -0.18 -0.54 -1.00 -1.65 -1.83 -2.03 -2.22 -2.42 -2.61 -2.77 -2.91 -3.06 -3.23 -3.39 -3.53 -3.66 -3.80 -3.91 -3.98 -4.06 -4.13 -4.14 -4.21 -4.28 -21.2 -43.3 -68.2 -96.5 -102.3 -108.1 -113.5 -119.1 -124.2 -129.7 -135.1 -140.5 -146.1 -151.4 -156.7 -162.0 -167.7 -172.0 -177.0 -178.2 -173.3 -169.4 -165.1 -160.0 -25.54 -20.84 -17.35 -15.07 -14.79 -14.58 -14.46 -14.34 -14.28 -14.24 -14.18 -14.10 -14.06 -14.04 -14.05 -14.07 -14.13 -14.21 -14.36 -14.53 -14.73 -14.93 -15.05 -15.09 73.1 55.1 38.7 21.3 17.2 12.8 -2.8 -6.1 -9.5 -12.9 -16.2 -19.1 -22.0 -25.3 -28.2 -30.7 -33.8 -35.9 -38.7 -40.9 -43.0 6.40 6.53 6.73 6.78 6.71 6.61 6.50 6.40 6.29 6.17 6.08 5.98 5.83 5.67 5.51 5.35 5.17 5.01 4.84 4.63 4.44 4.31 4.15 4.05 157.7 135.9 112.7 87.3 82.2 77.1 72.2 67.6 63.0 58.6 54.1 49.4 44.5 39.6 35.1 30.5 26.0 21.8 17.2 13.4 -3.6 -1.53 -2.00 -2.75 -3.98 -4.31 -4.65 -5.02 -5.40 -5.79 -6.20 -6.63 -7.02 -7.38 -7.75 -8.13 -8.55 -8.93 -9.23 -9.52 -9.83 -10.00 -10.00 -9.94 -9.91 -13.8 -28.3 -44.9 -65.2 -69.5 -73.9 -78.2 -82.3 -86.6 -91.1 -95.7 -100.7 -106.0 -111.6 -117.0 -123.0 -129.7 -136.2 -142.4 -148.8 -154.9 -162.1 -168.1 -172.9
Ref. DSEC28277003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
EC2827
40GHz Super Noise HEMT
Parameters 2V,Ids (maximum available gain) Freq. -0.21 -0.29 -0.40 -0.50 -0.60 -0.73 -0.84 -0.94 -1.06 -1.17 -1.34 -1.48 -1.61 -1.78 -1.91 -2.08 -2.27 -2.49 -2.70 -2.86 -3.08 -3.20 -3.29 -3.39 -3.54 -3.71 -3.83 -3.90 -4.00 -4.09 -4.10 -4.14 -4.19 -4.19 -4.17 -4.33 -24.2 -29.1 -34.0 -38.9 -44.1 -49.1 -54.1 -59.6 -65.3 -71.2 -76.8 -82.7 -88.7 -94.8 -100.9 -107.3 -113.5 -119.6 -125.2 -131.1 -136.3 -141.8 -147.1 -152.7 -158.1 -163.6 -168.7 -174.2 -179.8 175.9 171.2 166.7 162.2 158.6 154.4 149.4 -27.21 -26.00 -24.46 -23.48 -22.60 -21.81 -21.08 -20.38 -19.68 -19.08 -18.54 -18.04 -17.59 -17.20 -16.86 -16.53 -16.29 -16.17 -16.08 -16.06 -16.10 -16.07 -16.06 -16.02 -15.97 -15.95 -15.92 -15.96 -16.02 -16.12 -16.18 -16.43 -16.53 -16.80 -16.78 -16.78 72.2 68.4 64.4 60.6 56.8 53.3 50.0 46.8 43.4 40.1 36.6 33.1 30.0 26.7 23.5 19.9 16.1 11.9 -2.1 -5.1 -7.7 -10.7 -13.2 -15.8 -17.9 -20.4 -22.6 -24.4 -26.3 -27.7 -29.3 -31.1 -33.3 9.43 9.44 9.43 9.43 9.41 9.40 9.41 9.41 9.42 9.39 9.33 9.29 9.24 9.21 9.13 9.04 8.89 8.73 8.53 8.38 8.22 8.04 7.88 7.77 7.60 7.36 7.17 6.98 6.73 6.52 6.36 6.12 5.85 5.74 5.63 5.37 156.1 151.5 146.9 142.4 137.7 133.1 128.5 123.8 118.7 113.7 108.7 103.7 98.7 93.7 88.6 83.3 78.2 73.2 68.5 64.0 59.7 55.4 51.1 46.7 42.0 37.3 33.0 28.5 24.3 20.4 16.1 12.4 -3.6 -1.99 -2.08 -2.20 -2.35 -2.52 -2.67 -2.82 -2.98 -3.19 -3.45 -3.68 -3.93 -4.23 -4.53 -4.86 -5.26 -5.70 -6.14 -6.61 -7.09 -7.54 -8.01 -8.52 -9.03 -9.42 -9.89 -10.30 -10.86 -11.37 -11.64 -11.92 -12.27 -12.51 -12.37 -12.25 -12.01 -14.8 -17.9 -20.9 -23.7 -26.8 -29.9 -33.1 -36.3 -39.8 -43.3 -47.1 -51.0 -54.6 -58.7 -62.9 -67.5 -71.7 -76.2 -80.5 -84.5 -88.7 -93.2 -97.7 -102.7 -107.9 -113.8 -119.3 -126.0 -133.7 -140.9 -147.3 -154.6 -160.8 167.9 174.4 -179.5
Ref. DSEC28277003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
40GHz Super Noise HEMT
Typical results
EC2827
Tamb +25°C Typical noise parameters 3mA, including 0.18nH gate drain series inductance (single cell) FREQUENCY 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000 24000 26000 28000 30000 32000 34000 36000 38000 40000 0.08 0.16 0.24 0.32 0.40 0.48 0.55 0.63 0.70 0.78 0.85 0.93 0.99 1.05 1.13 1.20 1.27 1.34 1.40 1.47 24.3 21.0 18.9 17.4 16.1 15.1 14.2 13.4 12.7 12.0 11.4 10.9 10.4 10.0 Ang-deg. 6.05 12.1 18.4 24.8 31.4 38.4 45.7 53.5 61.8 70.8 80.0 91.0 102.0 114.0 127.0 140.0 154.0 167.0 180.0 -169.0 30.0 29.4 28.6 27.4 26.1 24.4 22.6 20.5 18.4 16.2 13.9 11.8 2.78
MOD. 0.97 0.94 0.91 0.88 0.85 0.82 0.78 0.75 0.72 0.68 0.65 0.61 0.58 0.56 0.54 0.52 0.52 0.53 0.53 0.55
Ref. DSEC28277003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
EC2827
Typical results
Tamb +25°C,
40GHz Super Noise HEMT
MSG,MAG Frequency Stability factor Frequency (GHz) MAG, gain (dB)
Noise figure associated gain Noise figure (dB) (mA) 12,5 11,5 10,5
Noise Figure Associated gain frequency Noise figure (dB) Frequency (MHz) Gain (dB)
Ref. DSEC28277003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
40GHz Super Noise HEMT
Chip Mechanical Data
EC2827
0,38 +/-10
Drain area Gate area
Thickness Recommended attach Stage temperature 300°C (minimize temp. time whenever possible) Preforms Au/Sn (80/20) Atmosphere nitrogen forming flow Recommended bonding very pure gold wire (thermal compression) bonder should properly grounded.
+/-10
0,38
dimensions drain gate source
SOURCE Prematching output impedance
GATE
DRAIN
microstripe line
microstripe line
Gate source inductance: short possible high frequency GHz)
Optimum bonding cells
Ref. DSEC28277003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
EC2827
40GHz Super Noise HEMT
Ordering Information
Chip form EC2827-99X/00
Information furnished believed accurate reliable. However United Monolithic Semiconductors S.A.S. assumes responsability consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights United Monolithic Semiconductors S.A.S. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. United Monolithic Semiconductors S.A.S. products authorised critical components life support devices systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. DSEC28277003 Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
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