12GHz Super Noise HEMT AlGaAs/GaAs Field Effect Transistor Descri

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12GHz Super Noise HEMT AlGaAs/GaAs Field Effect Transistor Descri

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EC2623
12GHz Super Noise HEMT
AlGaAs/GaAs Field Effect Transistor Description
EC2623 X/Ku band Schottky barrier High Electron Mobility Transistor. This device based 0.25µm mushroom Aluminium gate associated with HEMT active layer passivated with SI3N4 layer.
available chip form BMH204 package.
Main Features
0.3dB minimum noise figure 5GHz 0.65dB minimum noise figure@12GHz 14dB associated gain 5GHz 10.5dB associated gain 12GHz Chip size 0.45 0.38 0.08
Drain Gate Source
Main Characteristics
Tamb +25°C Symbol Idss NFmin Parameter Saturated drain current Minimum noise figure Associated gain 0.55 Unit
Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. DSEC26237003
Specifications subject change without notice
United Monolithic Semiconductors S.A.S.
Route B.P.46 91401 Orsay Cedex France Tel. (0)1 (0)1
EC2623
Electrical Characteristics
Tamb +25°C Symbol Idss Parameter Saturated drain current
12GHz Super Noise HEMT
Test Conditions Idss/100 10mA Vgsd
Unit
Pinch voltage
-1.0
-0.6
-0.2
Transconductance
Igsd
Gate source/drain leakage current
Dynamic characteristics
Symbol Parameter Minimum noise figure Vds=2V Associated Gain Ids=10mA Test Conditions 5GHz 12GHz 5GHz 12GHz 0.55 0.85 Unit
Absolute Maximum Ratings
Tamb +25°C Symbol Tstg Parameter Drain source voltage Gate source voltage Total power dissipation Operating channel temperature Storage temperature range Values +175 +175 Units
Operation this device above these parameters cause permanent damage
Ref. DSEC26237003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
12GHz Super Noise HEMT
Typical Scattering Parameters
Tamb +25°C Parameters 31mA Freq. 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 -0.27 -0.54 -0.89 -1.26 -1.66 -2.03 -2.34 -2.57 -2.75 -2.88 -2.97 -3.07 -3.19 -3.33 -3.48 -3.64 -3.78 -27.5 -40.8 -53.4 -65.3 -76.0 -85.5 -93.6 -100.6 -106.9 -112.8 -118.8 -125.1 -132.1 -139.7 -147.6 -155.2 -161.2 16.27 15.91 15.45 14.91 14.33 13.71 13.11 12.53 11.97 11.43 10.91 10.38 9.86 9.35 8.88 8.46 8.15 158.0 148.0 138.7 130.2 122.5 115.7 109.7 104.1 98.9 93.8 88.6 83.4 78.3 73.3 68.8 64.3 60.6 -29.73 -26.58 -24.55 -23.17 -22.21 -21.52 -21.04 -20.61 -20.28 -19.98 -19.70 -19.46 -19.26 -19.11 -18.93 -18.74 -18.48 74.1 67.1 60.5 54.6 49.5 45.0 41.6 38.6 35.8 33.3 30.9 28.4 25.9 23.7 21.8 20.2 19.1
EC2623
-6.08 -6.48 -6.92 -7.31 -7.65 -7.95 -8.20 -8.52 -8.89 -9.32 -9.75 -10.10 -10.21 -10.03 -9.63 -9.17 -8.81
-19.5 -29.2 -38.6 -47.2 -54.7 -61.1 -66.1 -70.5 -75.0 -80.5 -86.8 -94.1 -101.1 -106.9 -110.2 -110.9 -109.6
Typical results
Tamb +25°C Typical Noise Parameters 10mA, Including 0.1nH gate drain series inductance Frequency 2000 4000 6000 8000 10000 12000 14000 16000 18000 0.09 0.18 0.27 0.36 0.45 0.54 0.63 0.71 0.80 23.9 20.4 18.1 16.4 15.1 13.9 13.0 12.1 11.3 Ang-deg. 15.4 30.8 46.1 61.4 76.4 91.1 105.0 119.0 131.0 11.00 10.60 10.10 9.30 8.40 7.40 6.35 5.25 4.20
MOD. 0.912 0.835 0.770 0.720 0.680 0.650 0.635 0.625 0.625
Ref. DSEC26237003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
EC2623
Typical Parameters
Tamb +25°C
12GHz Super Noise HEMT
Frequency Noise figure (dB) Frequency (GHz) Associated gain (dB)
10mA
Frequency Stability factor Frequency (GHz) Maximum Stable Gain (dB)
31mA
Ref. DSEC26237003
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
12GHz Super Noise HEMT
Chip Mechanical Data
EC2623
Drain area= 45*45 Gate area 45*45 Thickness 20µm
Recommended attach
Stage temperature 300°C (minimize temp. time whenever possible) Preforms Au/Sn (80/20) Atmosphere nitrogen forming flow
dimensions
Recommended bonding
very pure gold wire (thermal compression) bonder should properly grounded
pure gold diameter
optimize attach shorten source gate bonding length
Optimize bounding high frequency (Gate source inductances short possible)
Ref. DSEC26237003 Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
EC2623
12GHz Super Noise HEMT
Ordering Information
Chip form Package EC2623-99X/00 TC2623-A3X/00 (see DataSheet TC2623 more informations)
Information furnished believed accurate reliable. However United Monolithic Semiconductors S.A.S. assumes responsability consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights United Monolithic Semiconductors S.A.S. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. United Monolithic Semiconductors S.A.S. products authorised critical components life support devices systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. DSEC26237003 Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1

12GHz Super Noise HEMT AlGaAs/GaAs Field Effect Transistor Descri

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