N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY FEATURES rD

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N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY FEATURES rD

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Si7848DP
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
rDS(on)
0.009 0.012
TrenchFETr Power MOSFETS Thermal Resistance PowerPAKt Package with 1.07-mm Profile Optimized Fast Switching
APPLICATIONS
DC/DC Converters Synchronous Buck Synchronous Rectifier
PowerPAKt SO-8
6.15
5.15
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 70_C 25_C 70_C
Symbol
secs
Steady State
Unit
10.4 1.67 1.83
Tstg
13.7
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes Surface Mounted Board. Document Number: 71450 03513-Rev. 23-Apr-01 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
Maximum
Unit
_C/W
Si7848DP
SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 55_C 0.0075 0.0095 0.75 0.009 0.012 "100
Symbol
Test Condition
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time td(on) td(off) di/dt A/ms VGEN 18.5
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru Drain Current Drain Current
Transfer Characteristics
125_C 25_C -55_C
thru
Drain-to-Source Voltage
Gate-to-Source Voltage Document Number: 71450 03513-Rev. 23-Apr-01
www.vishay.com
Si7848DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance Drain Current
0.020 DS(on) On-Resistance 3000
Capacitance
Capacitance (pF)
0.016
2500 Ciss 2000
0.012 0.008
1500
1000 Coss Crss
0.004
0.000
Drain Current
Drain-to-Source Voltage
Gate Charge
Gate-to-Source Voltage
On-Resistance Junction Temperature
DS(on) On-Resistance (Normalized)
Total Gate Charge (nC)
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
150_C Source Current 0.04
On-Resistance Gate-to-Source Voltage
DS(on) On-Resistance
0.03
0.02
25_C
0.01
0.00 Source-to-Drain Voltage Gate-to-Source Voltage
Document Number: 71450 03513-Rev. 23-Apr-01
www.vishay.com
Si7848DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
GS(th) Variance -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 0.001 0.01 Time (sec) Temperature (_C) Power
Single Pulse Power, Juncion-To-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05 0.02
Duty Cycle,
Unit Base RthJA 55_C/W
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 71450 03513-Rev. 23-Apr-01

N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY FEATURES rD

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