IRF7201 HEXFET® Power MOSFET VDSS Generation Technology Ultr

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IRF7201 HEXFET® Power MOSFET VDSS Generation Technology Ultr

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91100C
IRF7201
HEXFET® Power MOSFET VDSS
Generation Technology Ultra On-Resistance N-Channel MOSFET Surface Mount Available Tape Reel Dynamic dv/dt Rating Fast Switching Description
RDS(on) 0.030W
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. SO-8 been modified through customized leadframe enhanced thermal characteristics multiple-die capability making ideal variety power applications. With these improvements, multiple devices used application with dramatically reduced board space. package designed vapor phase, infra red, wave soldering techniques. Power dissipation greater than 0.8W possible typical mount application.
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C 70°C VGSM dv/dt TSTG Drain- Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction Storage Temperature Range
Max.
0.02
Units
W/°C V/ns
Thermal Resistance
Parameter
RqJA Maximum Junction-to-Ambient
Typ.
Max.
Units
°C/W
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IRF7201
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
DV(BR)DSS/DTJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min.
Typ. 0.024
Max. Units Conditions 250µA V/°C Reference 25°C, 0.030 10V, 7.3A 0.050 4.5V, 3.7A VGS, 250µA 15V, 2.3A 24V, 24V, 125°C -100 -20V 4.6A 10V, Fig. 4.6A 6.2W 3.2W 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 4.6A, 25°C, 4.6A di/dt 100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
4.6A, di/dt 120A/µs, V(BR)DSS,
150°C
15V, starting 25°C, 6.6mH
4.6A. (See Figure
Pulse width 300µs; duty cycle When mounted inch square copper board, t<10
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IRF7201
rain-to-S ource urrent
rain-to-S ource urrent
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
3.0V
3.0V
25°C
150°C
rain-to-S ource oltage
rain-to-S ource oltage
Typical Output Characteristics
Typical Output Characteristics
-to-S urren
everse rain urrent
25°C
ource-to-D rain oltage
Typical Transfer Characteristics
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Typical Source-Drain Diode Forward Voltage
IRF7201
S(on) rain-to-S ourc istance
(on) rain-to-S ource esistance alized)
4.6A
0.20
0.15
0.10
4.5V
0.05
0.00
Junction perature
rain urrent
Normalized On-Resistance Temperature
On-Resistance Drain Current
Single Pulse Avalanche Energy (mJ)
0.05
(on) rain-to-S ource esistanc
BOTTOM
2.1A 3.7A 4.6A
0.04
0.03
7.3A
0.02
ate-to-S ource oltage
Starting Junction Temperature (°C)
On-Resistance Gate Voltage
Maximum Avalanche Energy Drain Current
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IRF7201
1000
ate-to-S ourc olta
apacitanc
rain-to-S ource oltage
otal harge
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Thermal Response thJA
0.50
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.01
0.00001
0.0001
0.001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7201 SO-8 Package Details
.0532 .0040 .014 .0075 .189 .150 .0688 .0098 .018 .0098 .196 .157
ILLIM 1.35 0.10 0.36 0.19 4.80 3.81 1.75 0.25 0.46 0.25 4.98 3.99
0.25 (.010)
.050 .025 .2284 .011 0.16 .2440 .019 .050
1.27 0.635 5.80 0.28 0.41 6.20 0.48 1.27
0.25 (.010)
0.10 (.004)
0.72 (.028
14.5M -1982. LLIN ILLIM TLIN TLIN -012A 0.25 (.006).
6.46 .255
1.78 (.070)
1.27 .050
Part Marking
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IRF7201
Tape Reel
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 GREAT BRITAIN: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data specifications subject change without notice. 9/98
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IRF7201 HEXFET® Power MOSFET VDSS Generation Technology Ultr

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