+150 (125) Class 40/125/56 SEMITRANS® Power MOSFET Modules m
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+150 (125) Class 40/125/56
SEMITRANS® Power MOSFET Modules
min.
Inverse Diode
Characteristics
Symbol Conditions
SEMITRANS min.
typ.
1200
max.
1000 0,18 0,05
Units
°C/W °C/W
V(BR)DSS 0,25 VGS(th) IDSS IGSS RDS(on) CCHC Ciss Coss Crss td(on) td(off) (SKM 181A3R:
Inverse Diode
Features Channel, enhancement mode Short internal connections avoid oscillations DCB-ceramic isolated copper baseplate electrical connections easy busbaring Large clearance creepage distances recognized, file Typical Applications Switched mode power supplies servo robot drives choppers Resonant welding inverters motor drives Laser power supplies equipment Plasma cutting suitable linear amplification built-in gate resistor chips ("R") Rginternal 1,3, preferred typed paralleling lower switching frequencies This electrostatic discharge sensitive device (ESDS). Please observe international standard 747-1, Chapter
Thermal characteristics Rthjc Rthch surface
Mechanical Data
Case
heatsink, Units heatsink, Units terminals, Units terminals, Units
5x9,81
lb.in. lb.in.
case unless otherwise specified -diF A/µs (with standard recovery body drain diode) replace (with fast recovery body drain diode) only DC-choppers resonant inverters which fast recovery feature resonant, PWM-inverters. doubt please SEMIKRON.
SEMIKRON
0898
181A3R
M181A3R
1000 TCase=25°C Tj=150°C non-repetitive tp=23µs
100µs
10ms
TCase
100ms
1000
Fig. Rated power dissipation temperature
Fig. Maximum safe operating area
181A3R
Fig. Output characteristic
M181A3R
Fig. Transfer characteristic
181A3R
typ. =23A RDS(on) VGS=10V TCase VGS>=10V
Fig. On-resistance temperature
Fig. Rated current temperature
0898
SEMIKRON
181A3R
181A3R
1000
(BR)DSS -di/dt A/ns
Fig. Breakdown voltage temperature
Fig. Drain-source voltage derating
Fig. Typ. capacitances drain-source voltage
181A3R
Fig. Gate charge characteristic
181A3R
1000 tp=80µs
Tj=25°C typ. Tj=150°C typ. Tj=25°C (98%) Tj=150°C (98%) VGS(th) VDS=VGS ID=1mA
typ.
Fig. Diode forward characteristic
Fig. Gate-source threshold voltage
SEMIKRON
0898
181A3R
0,25 °C/W Zthjc 0,15 Zthjh
0,05 0,0001 0,001
0,01
Fig. Transient thermal impedance
°C/W 0,01 0,05 0,02 0,01 0,001 single pulse Rthjc 0,0001 1E-06 1E-05 1E-04 0,001 0,01 D=tp =tp*f
M181A3R LS-52
Fig. Thermal impedance under pulse conditions SEMITRANS Case 181A3
Dimensions
0898
SEMIKRON
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