+150 (125) Class 40/125/56 SEMITRANS® Power MOSFET Modules P

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+150 (125) Class 40/125/56 SEMITRANS® Power MOSFET Modules P

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+150 (125) Class 40/125/56
SEMITRANS® Power MOSFET Modules
Preliminary Data
min.
Inverse Diode 80°C -IDM 80°C
Characteristics
V(BR)DSS 0,25 VGS(th) VDS, IDSS IGSS RDS(on) CCHC Ciss Coss Crss td(on) td(off)
SEMITRANS min.
typ.
0,72
max.
1000 0,16 0,05
Units
Inverse Diode
Thermal characteristics
Features Channel, enhancement mode Short internal connections avoid oscillations With built-in gate resistor chips ("R") Rgtotal Without hard mould (environmental aspects) Isolated copper baseplate using Direct Copper Bonding Ceramic electrical connections easy busbaring Large clearance creepage distances recognized, file Typical Applications Switched mode power supplies servo robot drives choppers Resonant welding inverters motor drives Laser power supplies equipment suitable linear amplification This electrostatic discharge sensitive device (ESDS). Please observe international standard 747-1, Chapter
Rthjc Rthch
surface
°C/W °C/W
Mechanical Data
Case
heatsink, Units heatsink, Units terminals, Units terminals, Units
5x9,81
lb.in. lb.in. m/s2
page
Tcase unless otherwise specified -diF/dt A/µs
parallel with former 151F (which discontinued) replace 151, former
SEMIKRON
0599
M151A LS-1
1000
M151A LS-2
tp=10µs 100µs
10ms
TCase 1000 10000 RDSon=VDS/ID 100ms
Fig. Rated power dissipation temperature
M151A LS-3
Fig. Maximum safe operating area
M151A LS-4
Ptot =780W VCE=20V 5,5V
5,0V
4,5V
4,0V
Fig. Output characteristic
Fig. Transfer characteristic
M151A LS-6
M151A LS-5
I=50A VGS=10V
typ. RDS(on) TCase
Fig. On-resistance temperature
Fig. Rated current temperature
0599 SEMIKRON
M151AR.XLS-7
M151A LS-8
V(BR)DSS
-di/dt A/ns
Fig. Breakdown voltage temperature
Fig. Drain-source voltage derating
M151A LS-9
ID=65A
M151A LS-10
Ciss
VDS=100V VDS=400V
Coss Crss
Qgls
1000 1200
1400
Fig. Capacitances drain-source voltage
M151A LS-11
Fig. Gate charge characteristic
1000
25°C Tj=150°C 25°C (98%)
Tj=150°C (98%)
Fig. Diode forward characteristic
SEMIKRON 0599
M151A LS-14
typ.
VDS=VGS VGS(th) =1mA
Fig. Gate-source threshold voltage
0,25 °C/W
M151A LS-52
Zthjh
0,15
Zthjc
0,05 Zthjcp 0,00001 0,0001
0,001
0,01
Fig. Transient thermal impedance
°C/W
M151A LS-52
0,01
0,001 single pulse Zthjc 0,0001 0,00001 0,0001
0,05 0,02 0,01 0,01
0,001
Fig. Thermal impedance under pulse conditions
0599 SEMIKRON
SEMITRANS Case recognized, file 5632
Outline circuit diagram
SEMIKRON
0599

+150 (125) Class 40/125/56 SEMITRANS® Power MOSFET Modules P

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