FLASH MEMORY Extended temperature range operation: -40°C +85°C Bo
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EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY
FLASH MEMORY
Extended temperature range operation: -40°C +85°C Boot block architecture: 16KB/4K-word boot block (protected) 8KB/4K-word parameter blocks Multiple 128KB/64K-word main blocks Low-voltage operation: 3.0V 3.6V ±10% Address access time: 100ns 3.3V ±0.3V Available densities: 4Mb, Industry-standard pinouts Automated write erase algorithm Two-cycle WRITE/ERASE sequence TSOP FBGA* packaging options
MT28F400B1 VET, MT28F800B1 VET, MT28F004B1 VET, MT28F008B1
Voltage, Extended Temperature
ASSIGNMENT (Top View) 40-Pin TSOP Type (C-2)
OPTIONS
Timing 100ns access Boot Block Starting Address Bottom Voltage 3.0V Operating Temperature Range Extended (-40°C +85°C)
MARKING
48-Pin TSOP Type (C-3)
BYTE# BYTE# DQ15/A-1 DQ15/A-1 DQ14 DQ14 DQ13 DQ13 DQ12 DQ12 DQ11 DQ11 DQ10 DQ10
Packages Plastic 40-pin TSOP Type (10mm 20mm) Plastic 48-pin TSOP Type (12mm 20mm) 48-bump FBGA ball grid) Part Number Example: MT28F400B1WG-10 TVET
MT28F800B1 only. Contact factory availability.
GENERAL DESCRIPTION
Micron® voltage, extended temperature flash memory family consists boot block flash memories. They fabricated with Micron's advanced CMOS floating-gate process. Device operation features identical commercial temperature equivalent except that extended temperature range operation (-40°C
Extended Temperature Boot Block Flash Memory F32.p65 Rev. 2/99
+85°C) supported operations. further information device operation features, refer equivalent commercial temperature device data sheets. Please refer Micron's site (www.micron.com/ flash/htmls/datasheets.html) latest full-length data sheet.
Micron Technology, Inc., reserves right change products specifications without notice. ©1999, Micron Technology, Inc. Micron registered trademark Micron Technology, Inc.
EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS*
Voltage Supply Relative -0.5V +6V** Input Voltage Relative -0.5V +6V** Voltage Relative -0.5V +12.6V Voltage Relative -0.5V +12.6V Temperature under Bias -40°C +85°C Storage Temperature (plastic) -55°C +125°C Power Dissipation *Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. This stress rating only, functional operation device these other conditions above those indicated operational sections this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability. **VCC, input pins transition <20ns <20ns. Voltage pulse <20ns <20ns.
ELECTRICAL CHARACTERISTICS RECOMMENDED READ OPERATING CONDITIONS
(-40°C +85°C) PARAMETER/CONDITION Supply Voltage Input High (Logic Voltage, inputs Input (Logic Voltage, inputs Device Identification Voltage, Supply Voltage SYMBOL -0.5 11.4 -0.5 12.6 12.6 UNITS NOTES
OPERATING CHARACTERISTICS
(-40°C +85°C) PARAMETER/CONDITION OUTPUT VOLTAGE LEVELS (CMOS) Output High Voltage (IOH -100µA) Output Voltage (IOL 2mA) INPUT LEAKAGE CURRENT input VCC); other pins under test INPUT LEAKAGE CURRENT: INPUT (11.4V 12.6V VID) INPUT LEAKAGE CURRENT: INPUT (11.4V 12.6V VHH) OUTPUT LEAKAGE CURRENT (DOUT disabled; VOUT VCC) NOTE: voltages referenced VSS. SYMBOL 0.45 UNITS NOTES
Extended Temperature Boot Block Flash Memory F32.p65 Rev. 2/99
Micron Technology, Inc., reserves right change products specifications without notice. ©1999, Micron Technology, Inc.
EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY
CAPACITANCE
25°C; MHz) PARAMETER/CONDITION Input Capacitance Output Capacitance SYMBOL UNITS NOTES
READ STANDBY CURRENT DRAIN
(-40°C +85°C) PARAMETER/CONDITION READ CURRENT: WORD-WIDE, CMOS INPUT LEVELS (CE# 0.2V; 0.2V; MHz; Other inputs 0.2V 0.2V; 0.2V) READ CURRENT: BYTE-WIDE, CMOS INPUT LEVELS (CE# 0.2V; 0.2V; MHz; Other inputs 0.2V 0.2V; 0.2V) STANDBY CURRENT: CMOS INPUT LEVELS power supply standby current (CE# 0.2V) IDLE CURRENT (CE# 0.2V; 0Hz; Other inputs 0.2V 0.2V; 0.2V; Array read mode) DEEP POWER-DOWN CURRENT: SUPPLY (RP# ±0.2V) STANDBY READ CURRENT: SUPPLY (VPP 5.5V) STANDBY READ CURRENT: SUPPLY (VPP 5.5V) DEEP POWER-DOWN CURRENT: SUPPLY (RP# ±0.2V) SYMBOL ICC1 UNITS NOTES
ICC2
ICC3
ICC4 ICC5 IPP1 IPP2 IPP3
READ TIMING PARAMETERS ELECTRICAL CHARACTERISTICS RECOMMENDED OPERATING CONDITIONS
(-40°C +85°C; +3.3V ±0.3V)
CHARACTERISTICS PARAMETER READ cycle time Access time from Access time from Access time from address HIGH output valid delay HIGH output High-Z Output hold time from OE#, address change pulse width NOTE: SYMBOL tACE tAOE tRWH UNITS NOTES
dependent cycle rates. dependent output loading. Specified values obtained with outputs open. delayed tACE minus tAOE after falls before tACE affected.
Extended Temperature Boot Block Flash Memory F32.p65 Rev. 2/99
Micron Technology, Inc., reserves right change products specifications without notice. ©1999, Micron Technology, Inc.
EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY
TEST CONDITION
Input pulse levels Input rise fall times <10ns Input timing reference level 1.5V Output timing reference level 1.5V Output load gate 50pF
ADDRESSES
WORD-WIDE READ CYCLE1,
VALID ADDRESS
DQ0-DQ15
VALID DATA
DON'T CARE UNDEFINED
READ TIMING PARAMETERS
SYMBOL
tACE tAOE
UNITS SYMBOL tRWH
UNITS
NOTE: BYTE# HIGH. Applies MT28Fx00B1 only.
Extended Temperature Boot Block Flash Memory F32.p65 Rev. 2/99
Micron Technology, Inc., reserves right change products specifications without notice. ©1999, Micron Technology, Inc.
ADDRESSES
EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY
BYTE-WIDE READ CYCLE1
VALID ADDRESS
DQ0-DQ7
VALID DATA
HIGH-Z
DQ8-DQ14
UNITS SYMBOL tRWH
DON'T CARE UNDEFINED
READ TIMING PARAMETERS
SYMBOL
tACE tAOE
UNITS
NOTE: BYTE# (MT28Fx00B1 VET). Does apply MT28F00xB1 VET.
Extended Temperature Boot Block Flash Memory F32.p65 Rev. 2/99
Micron Technology, Inc., reserves right change products specifications without notice. ©1999, Micron Technology, Inc.
EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY
RECOMMENDED WRITE/ERASE CONDITIONS
(-40°C +85°C; 3.3V ±0.3V)
PARAMETER/CONDITION WRITE/ERASE lockout voltage voltage during WRITE/ERASE operation voltage during WRITE/ERASE operation Boot block unlock voltage WRITE/ERASE lockout voltage SYMBOL VPPLK VPPH1 VPPH2 VLKO 11.4 11.4 12.6 12.6 UNITS NOTES
WRITE/ERASE CURRENT DRAIN
(-40°C +85°C; 3.3V ±0.3V) PARAMETER/CONDITION WORD WRITE CURRENT: SUPPLY WORD WRITE CURRENT: SUPPLY BYTE WRITE CURRENT: SUPPLY BYTE WRITE CURRENT: SUPPLY ERASE CURRENT: SUPPLY ERASE CURRENT: SUPPLY ERASE SUSPEND CURRENT: SUPPLY (ERASE suspended) ERASE SUSPEND CURRENT: SUPPLY (ERASE suspended) NOTE: SYMBOL ICC6 IPP4 ICC7 IPP5 ICC8 IPP6 ICC9 IPP7 UNITS NOTES
Absolute WRITE/ERASE protection when VPPLK. Parameter specified when device accessed. Actual current draw will ICC9 plus READ current READ executed while device erase suspend mode.
Extended Temperature Boot Block Flash Memory F32.p65 Rev. 2/99
Micron Technology, Inc., reserves right change products specifications without notice. ©1999, Micron Technology, Inc.
EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY
WRITE/ERASE TIMING CHARACTERISTICS RECOMMENDED OPERATING CONDITIONS: WE#-CONTROLLED WRITES
(-40°C +85°C; +3.3V ±0.3V)
CHARACTERISTICS PARAMETER WRITE cycle time HIGH pulse width HIGH pulse width pulse width pulse width Address setup time HIGH Address hold time from HIGH Data setup time HIGH Data hold time from HIGH setup time hold time from HIGH setup time HIGH setup time HIGH HIGH delay HIGH setup time HIGH WRITE duration (WORD BYTE WRITE Boot BLOCK ERASE duration Parameter BLOCK ERASE duration Main BLOCK ERASE duration HIGH busy status (SR7 hold time from status data valid HIGH hold time from status data valid Boot block relock delay time NOTE: SYMBOL tWPH tCPH tVPS1 tVPS2 tRHS tWED1 tWED2 tWED3 tWED4 tVPH tRHH tREL UNITS NOTES
WRITE/ERASE times measured valid status register data (SR7 Measured with VPPH1 Measured with VPPH2 12V. should held held HIGH until boot block WRITE ERASE complete. Polling status register before falsely indicate WRITE ERASE completion. tREL required relock boot block after WRITE ERASE boot block.
Extended Temperature Boot Block Flash Memory F32.p65 Rev. 2/99
Micron Technology, Inc., reserves right change products specifications without notice. ©1999, Micron Technology, Inc.
EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY
WRITE/ERASE TIMING CHARACTERISTICS RECOMMENDED OPERATING CONDITIONS: CE#-CONTROLLED WRITES
(-40°C +85°C; +3.3V ±0.3V)
CHARACTERISTICS PARAMETER WRITE cycle time HIGH pulse width HIGH pulse width pulse width pulse width Address setup time HIGH Address hold time from HIGH Data setup time HIGH Data hold time from HIGH setup time hold time from HIGH setup time HIGH setup time HIGH HIGH delay HIGH setup time HIGH WRITE duration (WORD BYTE WRITE) Boot BLOCK ERASE duration Parameter BLOCK ERASE duration Main BLOCK ERASE duration HIGH busy status (SR7 hold time from status data valid HIGH hold time from status data valid Boot block relock delay time NOTE: SYMBOL tWPH tCPH tVPS1 tVPS2 tRHS tWED1 tWED2 tWED3 tWED4 tVPH tRHH tREL UNITS NOTES
WRITE/ERASE times measured valid status register data (SR7 Measured with VPPH1 Measured with VPPH2 12V. should held held HIGH until boot block WRITE ERASE complete. Polling status register before falsely indicate WRITE ERASE completion. tREL required relock boot block after WRITE ERASE boot block.
Extended Temperature Boot Block Flash Memory F32.p65 Rev. 2/99
Micron Technology, Inc., reserves right change products specifications without notice. ©1999, Micron Technology, Inc.
EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY
WORD/BYTE WRITE ERASE DURATION CHARACTERISTICS
PARAMETER Boot/parameter BLOCK ERASE time Main BLOCK ERASE time Main BLOCK WRITE time (byte mode) Main BLOCK WRITE time (word mode) NOTE: UNITS NOTES
Typical values measured +25°C. Assumes system overhead. Typical WRITE times checkerboard data pattern.
Extended Temperature Boot Block Flash Memory F32.p65 Rev. 2/99
Micron Technology, Inc., reserves right change products specifications without notice. ©1999, Micron Technology, Inc.
Addresses
WRITE/ERASE CYCLE WE#-CONTROLLED WRITE/ERASE
Note
,,,,,,,
WED1/2/3/4 Status (SR7=0) Status (SR7=1) [Unlock boot block] [Unlock boot block] [12V VPP] VPP]
EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY
CMD/ Data-in
Data
,,,,, ,,,,,,,
VPS1
VPS2
VPPH2 VPPH1 VPPLK
WRITE SETUP ERASE SETUP input
WRITE ERASE (block) address asserted, WRITE data ERASE CONFIRM issued
WRITE ERASE executed, status register checked completion
Command next operation issued
DON'T CARE
WRITE/ERASE TIMING PARAMETERS
SYMBOL tWPH
tVPS1
UNITS SYMBOL tVPS2
tRHS tWED1 tWED2 tWED3 tWED4 tVPH tRHH
UNITS
NOTE:
Address inputs "Don't Care" must held stable. BYTE# LOW, data command 8-bit. BYTE# HIGH, data 16-bit command 8-bit (MT28Fx00B1 only). Data commands always 8-bit MT28F00xB1 VET. Either HIGH unlocks boot block.
Extended Temperature Boot Block Flash Memory F32.p65 Rev. 2/99
Micron Technology, Inc., reserves right change products specifications without notice. ©1999, Micron Technology, Inc.
Addresses
WRITE/ERASE CYCLE CE#-CONTROLLED WRITE/ERASE
Note
,,,,,,,,,,
WED1/2/3/4 Status (SR7=0) Status (SR7=1) [Unlock boot block] [Unlock boot block] [12V VPP] VPP]
EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY
CMD/ Data-in
Data
WRITE/ERASE TIMING PARAMETERS
SYMBOL
tCPH tVPS1
,,,,,,,
VPS1
VPS2
VPPH2 VPPH1 VPPLK
WRITE SETUP ERASE SETUP input
WRITE ERASE (block) address asserted, WRITE data ERASE CONFIRM issued
WRITE ERASE executed, status register checked completion
Command next operation issued
DON'T CARE
UNITS SYMBOL tVPS2
tRHS tWED1 tWED2 tWED3 tWED4 tVPH tRHH
UNITS
NOTE:
Address inputs "Don't Care" must held stable. BYTE# LOW, data command 8-bit. BYTE# HIGH, data 16-bit command 8-bit (MT28Fx00B1 only). Data commands always 8-bit MT28F00xB1 VET. Either HIGH unlocks boot block.
Extended Temperature Boot Block Flash Memory F32.p65 Rev. 2/99
Micron Technology, Inc., reserves right change products specifications without notice. ©1999, Micron Technology, Inc.
EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY
40-PIN PLASTIC TSOP (10mm 20mm)
.795 (20.19) .780 (19.81) .0197 (0.50) .727 (18.47) .721 (18.31) .010 (0.25)
INDEX .397 (10.08) .010 (0.25) .006 (0.15) .391 (9.93)
.010 (0.25)
.007 (0.18) .005 (0.13) DETAIL .047 (1.20)
.004 (0.10) GAGE PLANE .008 (0.20) .002 (0.05)
.024 (0.60) .016 (0.40) DETAIL .0315 (0.80)
NOTE:
typical where noted. Package width length include mold protrusion; allowable mold protrusion .01" side. dimensions inches (millimeters)
Extended Temperature Boot Block Flash Memory F32.p65 Rev. 2/99
Micron Technology, Inc., reserves right change products specifications without notice. ©1999, Micron Technology, Inc.
EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY
48-PIN PLASTIC TSOP (12mm 20mm)
.795 (20.19) .780 (19.81) .0197 (0.50) .727 (18.47) .721 (18.31) .010 (0.25)
INDEX
.475 (12.07) .469 (11.91) .010 (0.25) .006 (0.15)
.010 (0.25)
.004 (0.10) .007 (0.18) .005 (0.12) DETAIL .047 (1.20) GAGE PLANE .008 (0.20) .002 (0.05) .024 (0.60) .016 (0.40) DETAIL .0315 (0.80)
NOTE:
dimensions inches (millimeters) typical where noted. Package width length include mold protrusion; allowable mold protrusion .01" side.
8000 Federal Way, P.O. Boise, 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992
Micron registered trademark Micron Technology, Inc.
Extended Temperature Boot Block Flash Memory F32.p65 Rev. 2/99
Micron Technology, Inc., reserves right change products specifications without notice. ©1999, Micron Technology, Inc.
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