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LDT5210 LDT5210T Micro-LID Transistor Micro International, I
Top Searches for this datasheetMicro International, LDT5210 LDT5210T Micro-LID Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, 37221 Tel: 615-662-1200 615-662-1226 www.microlid.com sales@microlid.com Micro-LID Transistors LDT5210 LDT5210T Description: LDT5210 (untinned) LDT5210T (tinned) silicon transistors very small, rugged, surface mount, 4-post ceramic packages (Micro International manufactured package 4-075-1). LDT5210 LDT5210T meet general specifications 2N5210 transistor. 4-075-1 Micro-LID package 4-post, leadless ceramic carrier which provided with gold metallized pre-tinned lands, approved military, medical implant, sensor, high reliability applications. LDT5210 LDT5210T provided with special feature options such additional temperature cycling screening. Maximum Ratings: Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Dissipation Operating Junction Temperature Storage Temperature Operating Temperature Symbol Vcbo Vceo Vebo Tstg Toper Rating 150° -65° 150° -55° 125° January 1997 www.microlid.com sales@microlid.com Micro-LID Transistors LDT5210 LDT5210T Outline Schematic: VIEW .040 .075 SIDE VIEW VIEW .035 SUBSTRATE CIRCUIT BOARD Dimensions Marking: Length Width Height .075+ .003 .040+ .003 .035+ .003 Post (Emitter) Post (Base) Post (Collector) .015x .010typ .015x .010typ .015x .012typ Marking back package Blue over Emitter Center (post down configuration) Standard In-Process Screening Requirements: Semiconductor Micro-LID package visual inspection Wire pull test hour stabilization bake 150° temperature cycles from -55° 125° 100% electrical test characteristics Final visual inspection January 1997 www.microlid.com sales@microlid.com Micro-LID Transistors LDT5210 LDT5210T Electrical Characteristics (25° Ambient) Parameter Collector-Base Breakdown Collector-Emitter Breakdown* Emitter-Base Breakdown Collector-Base Cutoff Current Emitter-Base Cutoff Current Forward Current Gain* Collector-Emitter Saturation Base-Emitter Saturation Collector Capacitance Symbol BVcbo -Max -Units BVceo BVebo Icbo Iebo (sat) (sat) Cobo Pulse test, pulse width usec, duty cycle January 1997 Other recent searchesVHF-2100 - VHF-2100 VHF-2100 Datasheet HE6301-B - HE6301-B HE6301-B Datasheet CZT2000 - CZT2000 CZT2000 Datasheet BC1601D - BC1601D BC1601D Datasheet KS0066 - KS0066 KS0066 Datasheet 78M6618 - 78M6618 78M6618 Datasheet
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