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4 Megabit 512K x 8 SuperFlash EEPROM

SST28SF040 / SST28LF040 / SST28VF040

4 Megabit (512K x 8) SuperFlash EEPROM
SST28SF040 / SST28LF040 / SST28VF040
Data Sheet
FEATURES: · Single Voltage Read and Write Operations - 5.0V-only for the SST28SF040 - 3.0-3.6V for the SST28LF040 - 2.7-3.6V for the SST28VF040 · Superior Reliability - Endurance: 100, 000 Cycles (typical) - Greater than 100 years Data Retention · Memory Organization: 512K x 8 · Sector Erase Capability: 256 bytes per Sector · Low Power Consumption - Active Current: 15 mA (typical) for 5.0V and 10 mA (typical) for 3.0-3.6V / 2.7-3.6V - Standby Current: 5 µA (typical) · Fast Sector Erase / Byte Program Operation - Byte Program Time: 35 µs (typical) - Sector Erase Time: 2 ms (typical) - Complete Memory Rewrite: 20 sec (typical)
· Fast Read Access Time - 5.0V-only operation: 120 and 150 ns - 3.0-3.6V operation: 200 and 250 ns - 2.7-3.6V operation: 250 and 300 ns · Latched Address and Data · Hardware and Software Data Protection - 7-Read-Cycle-Sequence Software Data Protection · End of Write Detection - Toggle Bit - Data# Polling · TTL I / O Compatibility · JEDEC Standard - Flash EEPROM Pinouts · Packages Available - 32-Pin PDIP - 32-Pin PLCC - 32-Pin TSOP (8mm x 20mm)
The SST28SF040 / 28LF040 / 28VF040 are best suited for applications that require reprogrammable nonvolatile mass storage of program, configuration, or data memory. For all system applications, the SST28SF040 / 28LF040 / 28VF040 significantly improve performance and reliability, while lowering power consumption when compared with floppy diskettes or EPROM approaches. EEPROM technology makes possible convenient and economical updating of codes and control programs online. The SST28SF040 / 28LF040 / 28VF040 improve flexibility, while lowering the cost of program and configuration storage application. The functional block diagram shows the functional blocks of the SST28SF040 / 28LF040 / 28VF040. Figures 1 and 2 show the pin assignments for the 32 pin TSOP, 32 pin PDIP, and 32 pin PLCC packages. Pin description and operation modes are described in Tables 1 through 4. Device Operation Commands are used to initiate the memory operation functions of the device. Commands are written to the device using standard microprocessor write sequences. A command is written by asserting WE# low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Note, during the software data protection sequence the addresses are latched on the rising edge of OE# or CE#, whichever occurs first.
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
FUNCTIONAL BLOCK DIAGRAM OF SST28SF040 / 28LF040 / 28VF040
X-Decoder
4, 194, 304 Bit EEPROM Cell Array
Address Buffer & Latches Y-Decoder
CE# OE# WE#
Control Logic
I / O Buffers and Data Latches DQ7 - DQ0
309 ILL B1.0
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
A11 A9 A8 A13 A14 A17 WE# VCC A18 A16 A15 A12 A7 A6 A5 A4
Standard Pinout Top View Die Up
OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3
309 ILL F01.0
FIGURE 1: STANDARD PIN ASSIGNMENT FOR 32-PIN TSOP PACKAGE
VCC A12 A15 A16 A18 A17
A14 A13 A8 A9 A11 OE# A10 CE# DQ7
A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS
VCC WE# A17 A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3
A7 A6 A5 A4 A3 A2 A1 A0 DQ0
309 ILL F02.0
32-Lead PLCC Top View
CE# OE# WE# Vcc Vss
Chip Enable Output Enable Write Enable Power Supply Ground
309 PGM T1.1
Note: (1) This pin is considered an input for the purposes of the DC Operation Characteristics Table.
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
TABLE 2: OPERATION MODES SELECTION Mode CE# OE# Read VIL VIL Byte Program VIL VIH Sector Erase VIL VIH Standby VIH X Write Inhibit X VIL Write Inhibit X X Software Chip Erase VIL VIH Product Identification Hardware Mode VIL VIL Software Mode SDP Enable & Disable Mode Reset VIL VIL VIL VIL VIL VIH
WE# VIH VIL VIL X X VIH VIL VIH VIH VIH VIL
DQ DOUT DIN DIN High Z High Z / DOUT High Z / DOUT DIN Manufacturer Code (BF) Device Code (04)
309 PGM T2.0
TABLE 3: SOFTWARE COMMAND SUMMARY Command Summary Sector Erase Byte Program Chip Erase Reset Read ID Software Data Protect Software Data Unprotect
Notes: 1. 2. 3. 4. 5.
Required Setup Command Cycle Execute Command Cycle Cycle(s) Type(1) Addr(2, 3) Data(4) Type(1) Addr(2, 3) Data(4) 2 W X 20H W SA D0H 2 W X 10H W PA PD 2 W X 30H W X 30H 1 W X FFH 2 W X 90H R (8) (8) 7 R (6) 7 R (7)
309 PGM T3.1
TABLE 4: MEMORY ARRAY DETAIL Sector Select A18 - A8 Byte Select A7 - A0
310 PGM T4.0
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
Note: (1) Outputs shorted for no more than one second. No more than one output shorted at a time.
SST28SF040 OPERATING RANGE Range Ambient Temp Commercial 0°C to +70°C Industrial -40°C to +85°C
SST28LF040 OPERATING RANGE Range Ambient Temp Commercial 0°C to +70°C Industrial -40°C to +85°C
VCC 3.0 to 3.6V 3.0 to 3.6V
SST28VF040 OPERATING RANGE Range Ambient Temp Commercial 0°C to +70°C Industrial -40°C to +85°C
VCC 2.7 to 3.6V 2.7 to 3.6V
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
TABLE 5: SST28SF040 DC OPERATING CHARACTERISTICS Limits Symbol Parameter Min Max ICC Power Supply Current Read Program and Erase ISB1 ISB2 ILI ILO VIL VIH VOL VOH VH IH Standby VCC Current (TTL input) Standby VCC Current (CMOS input) Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Supervoltage for A9 Supervoltage Current for A9 25 40 3 20 1 10 0.8 2.0 0.4 2.4 11.6 12.4 200
Units
309 PGM T5.1
TABLE 6: SST28LF040 / 28VF040 DC OPERATING CHARACTERISTICS Limits Symbol Parameter Min Max Units ICC Power Supply Current Read Program and Erase ISB1 ISB2 ILI ILO VIL VIH VOL VOH VH IH Standby VCC Current (TTL input) Standby VCC Current (CMOS input) Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Supervoltage for A9 Supervoltage Current for A9 10 25 1 20 1 10 0.8 2.0 0.4 2.4 11.6 12.4 200 mA mA mA µA µA µA V V V V V µA
309 PGM T6.1
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
TABLE 7: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter (1) TPU-READ Power-up to Read Operation (1) TPU-WRITE Power-up to Write Operation
Minimum 200 200
Units µs µs
309 PGM T7.1
309 PGM T8.0
Maximum 12 pF 6 pF
Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Note:
Units Cycles Years Volts Volts mA
Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard A114 JEDEC Standard A115 JEDEC Standard 78
309 PGM T9.1
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. (2) See Ordering Information for desired type.
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
AC CHARACTERISTICS TABLE 10: SST28SF040 READ CYCLE TIMING PARAMETERS IEEE Symbol tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tELQX tGLQX tAXQX Industry Symbol TRC TAA TCE TOE TCLZ(1) TOLZ(1) TCHZ(1) TOHZ(1) TOH(1) Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time CE# Low to Active Output OE# Low to Active Output CE# High to High-Z Output OE# High to High-Z Output Output Hold from Address Change SST28SF040-120 SST28SF040-150 Min Max Min Max 120 150 120 150 120 150 50 70 0 0 0 0 30 40 30 40 0 0 Units ns ns ns ns ns ns ns ns ns
309 PGM T10.0
TABLE 11: SST28LF040 READ CYCLE TIMING PARAMETERS IEEE Symbol tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tELQX tGLQX tAXQX Industry Symbol TRC TAA TCE TOE TCLZ(1) TOLZ(1) TCHZ(1) TOHZ(1) TOH(1) SST28LF040-200 SST28LF040-250 Parameter Min Max Min Max Units Read Cycle time 200 250 ns Address Access Time 200 250 ns Chip Enable Access Time 200 250 ns Output Enable Access Time 120 120 ns CE# Low to Active Output 0 0 ns OE# Low to Active Output 0 0 ns CE# High to High-Z Output 60 60 ns OE# High to High-Z Output 60 60 ns Output Hold from Address 0 0 ns Change
309 PGM T11.0
TABLE 12: SST28VF040 READ CYCLE TIMING PARAMETERS IEEE Symbol tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tELQX tGLQX tAXQX Industry Symbol TRC TAA TCE TOE TCLZ(1) TOLZ(1) TCHZ(1) TOHZ(1) TOH(1) SST28VF040-250 Parameter Min Max Read Cycle time 250 Address Access Time 250 Chip Enable Access Time 250 Output Enable Access Time 120 CE# Low to Active Output 0 OE# Low to Active Output 0 CE# High to High-Z Output 60 OE# High to High-Z Output 60 Output Hold from Address 0 Change SST28VF040-300 Min Max Units 300 ns 300 ns 300 ns 150 ns 0 ns 0 ns 60 ns 60 ns 0 ns
309 PGM T12.0
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
TABLE 13: SST28SF040 ERASE / PROGRAM CYCLE TIMING PARAMETERS IEEE Industry Symbol Symbol Parameter tAVA tWLWH tAVWL tWLAX tELWL tWHEX tGHWL tWGL tWLEH tDVWH tWHDX tWHWL2 tWHWL3 tEHEL tWHWL1 TBP TWP TAS TAH TCS TCH TOES TOEH TCP TDS TDH TSE TRST(1) TSCE TCPH TWPH TPCP(1) TPCH(1) TPAS(1) TPAH(1) Byte Program Cycle Time Write Pulse Width (WE#) Address Setup Time Address Hold Time CE# Setup Time CE# Hold Time OE# High Setup Time OE# High Hold Time Write Pulse Width (CE#) Data Setup Time Data Hold Time Sector Erase Cycle Time Reset Command Recovery Time Software Chip Erase Cycle Time CE# High Pulse Width WE# High Pulse Width Protect Chip Enable Pulse Width Protect Chip Enable High Time Protect Address Setup Time Protect Address Hold Time
Min 100 10 50 0 0 10 10 100 50 10
Max 40
Units µs ns ns ns ns ns ns ns ns ns ns ms µs ms ns ns ns ns ns ns
309 PGM T13.1
Note:
(1)This
parameter is measured only for initial qualification and after the design or process change that could affect this parameter.
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
TABLE 14: SST28LF040 / 28VF040 ERASE / PROGRAM CYCLE TIMING PARAMETERS IEEE Industry Symbol Symbol Parameter Min tAVA tWLWH tAVWL tWLAX tELWL tWHEX tGHWL tWGL tWLEH tDVWH tWHDX tWHWL2 tWHWL3 tEHEL tWHWL1 TBP TWP TAS TAH TCS TCH TOES TOEH TCP TDS TDH TSE TRST(1) TSCE TCPH TWPH TPCP(1) TPCH(1) TPAS(1) TPAH(1) Byte Program Cycle Time Write Pulse Width (WE#) Address Setup Time Address Hold Time CE# Setup Time CE# Hold Time OE# High Setup Time OE# High Hold Time Write Pulse Width (CE#) Data Setup Time Data Hold Time Sector Erase Cycle Time Reset Command Recovery Time Software Chip Erase Cycle Time CE# High Pulse Width WE# High Pulse Width Protect Chip Enable Pulse Width Protect Chip Enable High Time Protect Address Setup Time Protect Address Hold Time 200 10 100 0 0 20 20 200 100 20 4 4 20 50 50 20 20 0 100
Max 40
Units µs ns ns ns ns ns ns ns ns ns ns ms µs ms ns ns ns ns ns ns
309 PGM T14.0
Note:
(1)This
parameter is measured only for initial qualification and after the design or process change that could affect this parameter.
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
TRC ADDRESS A18-0 TCE CE# TOE OE# TOHZ TCHZ TAA
TOH DATA VALID DATA VALID
309 ILL F03.0
TOLZ WE# TCLZ DQ 7-0
FIGURE 3: READ CYCLE TIMING DIAGRAM
TAS ADDRESS A18-0 TCS CE# TOES OE# TWP WE# TDH DQ 7-0 I0H TDS
BYTE PROGRAM SETUP COMMAND
309 ILL F04.0
TDS DATA VALID TDH TBP
FIGURE 4: WE# CONTROLLED BYTE PROGRAM TIMING DIAGRAM
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
TAS ADDRESS A18-0 TCPH CE#
TCP TOEH TOES
OE# TCH WE# TDH DQ 7-0 I0H TDS
BYTE PROGRAM SETUP COMMAND
TCS TDS DATA VALID TDH TBP
309 ILL F05.0
FIGURE 5: CE# CONTROLLED BYTE PROGRAM TIMING DIAGRAM
ADDRESS A18-0
WE# TDS DQ 7-0 FFH TDH TRST
309 ILL F06.0
FIGURE 6: RESET COMMAND TIMING DIAGRAM
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
ADDRESS A18-0
TDH TDS TDH 30H TSCE SETUP COMMAND EXECUTE COMMAND
309 ILL F07.0
WE# TDS
DQ 7-0
FIGURE 7: CHIP ERASE TIMING DIAGRAM
ADDRESS A18-0 TAS CE#
WE# TDH TDS DQ 7-0 20H TDS D0H TSE SETUP COMMAND EXECUTE COMMAND
309 ILL F08.0
FIGURE 8: SECTOR ERASE TIMING DIAGRAM
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
OE# TPCP CE# TPCH
ADDRESS TPAS
1820 TPAH
309 ILL F09.1
FIGURE 9: SOFTWARE DATA UNPROTECT TIMING DIAGRAM
OE# TPCP CE# TPCH
ADDRESS TPAS
1820 TPAH
309 ILL F10.0
FIGURE 10: SOFTWARE DATA PROTECT TIMING DIAGRAM
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
ADDRESS A18-0 TCE CE# TOEH OE# TOE WE# TOES
D# NOTE
309 ILL F11.0
NOTE: THIS TIME INTERVAL SIGNAL CAN BE TSE or TBP DEPENDING UPON THE SELECTED OPERATION MODE.
FIGURE 11: DATA# POLLING TIMING DIAGRAM
ADDRESS A18-0 TCE CE# TOEH OE# TOE TOE WE# TOES TCE
DQ6 NOTE
TWO READ CYCLES WITH SAME OUTPUTS
309 ILL F12.0
NOTE: THIS TIME INTERVAL SIGNAL CAN BE TSE or TBP DEPENDING UPON THE SELECTED OPERATION MODE.
FIGURE 12: TOGGLE BIT TIMING DIAGRAM
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
VIHT VHT
INPUT REFERENCE POINTS
OUTPUT
VLT VILT
309 ILL F13.1
Note: VHT-VHIGH Test VLT-VLOW Test VIHT-VINPUT HIGH Test VILT-VINPUT LOW Test
FIGURE 13: AC INPUT / OUTPUT REFERENCE WAVEFORM
TEST LOAD EXAMPLE VCC TO TESTER RL HIGH
TO DUT CL RL LOW
309 ILL F14.0
FIGURE 14: A TEST LOAD EXAMPLE
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
Start
Initialize Address
Execute Byte Program Setup Command
Load Address and Data & Start Programming
Read End of Write Detection
309 ILL F15.1
Next Address
Programming Failure
FIGURE 15: BYTE PROGRAM FLOWCHART
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
Internal Timer
Program / Erase Initiated
Toggle Bit
Program / Erase Initiated
Data# Polling
Program / Erase Initiated
Wait TBP or TSE
Read byte
Read DQ7
Program / Erase Completed
Read same byte
Yes No Program / Erase Completed
Yes Program / Erase Completed
309 ILL F16.2
FIGURE 16: WRITE WAIT OPTIONS
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
Start
Initialize Sector Address
Execute Two Step Sector Erase Command
End of Write Detection
Yes Read FF from Selected Byte Address
Verify FF
Erase Error
Yes Increment Byte Address No
Yes Next Sector Address Sector Erase Completed
309 ILL F17.1
Yes Device Erased
FIGURE 17: SECTOR ERASE FLOWCHART
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
Execute Read ID Command (90H) to Enter Read ID mode
Execute Reset Command (FFH) to Exit from Read ID mode
309 ILL F18.2
FIGURE 18: SOFTWARE PRODUCT ID FLOW
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
PRODUCT ORDERING INFORMATION
Device SST28XF040
Speed - XXX -
Suffix1 XX -
Suffix2 XX
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
SST28SF040 Valid combinations SST28SF040-120-4C- EH SST28SF040-120-4C- NH SST28SF040-120-4C- PH SST28SF040-150-4C- EH SST28SF040-150-4C- NH SST28SF040-150-4C- PH SST28SF040-120-3C- EH SST28SF040-120-3C- PH SST28SF040-150-3C- EH SST28SF040-150-3C- PH SST28SF040-120-4I- EH SST28SF040-150-4I- EH SST28SF040-120-3C- NH SST28SF040-150-3C- NH
SST28SF040-150-4C- U2
SST28SF040-120-4I- NH SST28SF040-150-4I- NH
SST28LF040 Valid combinations SST28LF040-200-4C- EH SST28LF040-200-4C- NH SST28LF040-200-4C- PH SST28LF040-250-4C- EH SST28LF040-250-4C- NH SST28LF040-250-4C- PH SST28LF040-250-4C- U2 SST28LF040-200-3C- EH SST28LF040-200-3C- PH SST28LF040-250-3C- EH SST28LF040-250-3C- PH SST28LF040-200-4I- EH SST28LF040-200-3C- NH SST28LF040-250-3C- NH SST28LF040-250-3C- U2 SST28LF040-200-4I- NH
SST28VF040 Valid combinations SST28VF040-250-4C- EH SST28VF040-250-4C- NH SST28VF040-250-4C- PH SST28VF040-300-4C- EH SST28VF040-300-4C- NH SST28VF040-300-4C- PH SST28VF040-300-4C- U2 SST28VF040-250-3C- EH SST28VF040-250-3C- PH SST28VF040-300-3C- EH SST28VF040-300-3C- PH SST28VF040-250-4I- EH SST28VF040-250-3C- NH SST28VF040-300-3C- NH SST28VF040-300-3C- U2 SST28VF040-250-4I- NH
Example:Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
PACKAGING DIAGRAMS
pin 1 index 1
7° 4 PLCS.
Base Plane Seating Plane
.008 .012 .600 BSC
.100 BSC
32.pdipPH-ILL.1
Note:
1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min / max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches.
32-LEAD PLASTIC DUAL-IN-LINE PACKAGE (PDIP) SST PACKAGE CODE: PH
TOP VIEW
SIDE VIEW
BOTTOM VIEW
Optional Pin #1 Identifier
.106 .112 .020 R. MAX. .023 x 30° .029 .030 R. .040
.042 .048 .585 .595 .547 .553 .026 .032 .013 .021 .400 BSC .490 .530
.050 BSC. .015 Min. .050 BSC. .125 .140 .075 .095 .026 .032
32.PLCC.NH-ILL.1
Note:
1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min / max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches.
32-LEAD PLASTIC LEAD CHIP CARRIER (PLCC) SST PACKAGE CODE: NH
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
PIN # 1 IDENTIFIER
1.05 0.95 .50 BSC
Note:
32.TSOP-EH-ILL.2
32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) SST PACKAGE CODE: EH
4 Megabit SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040
SALES OFFICES
SST Area Offices
Customer Service Northwest USA, Rocky Mtns. & West Canada Central & Southwest USA East USA & East Canada North America - Distribution Asia Pacific East Asia Europe Northern Europe (408) 523-7754 (408) 523-7661 (727) 771-8819 (978) 356-3845 (941) 505-8893 (408) 523-7762 (81) 45-471-1851 (44) 1932-230555 (45) 3833-5000
International Sales Representatives & Distributors
Australia ACD Belgium Memec Benelux China / Hong Kong Actron Technology Co., Ltd. (HQ) Hong Kong Actron Technology Co., Ltd. - Shanghai Actron Technology Co., Ltd. - Shenzhen Actron Technology Co., Ltd. - Chengdu Actron Technology Co., Ltd. - Beijing Actron Technology Co., Ltd. - Wuhan Actron Technology Co., Ltd. - Xian
MetaTech Limited (HQ) - Hong Kong MetaTech Limited - Beijing MetaTech Limited - Shanghai MetaTech Limited - Chengdu MetaTech Limited - Fuzhou MetaTech Limited - Shenzhen Serial System Ltd. - Hong Kong Serial System Ltd. - Chengdu Serial System Ltd. - Shanghai Serial System Ltd. - Shenzhen (61) 3-762 7644 (32) 1540-0080 (852) 2727-3978 (86) 21-6482-8021 (86) 755-376-2763 (86) 28-553-2896 (86) 10-6261-0042 (86) 27-8788-7226 (86) 29-831-4585 (852) 2421-2379 (86) 10-6858-2188 (86) 21-6485-7530 (86) 28-5577-415 (86) 591-378-1033 (86) 755-321-9726 (852) 2950-0820 (86) 28-524-0208 (86) 21-6473-2080 (86) 755-212-9076 (45) 7010-4888 (33) 4 72 37 0414 (33) 1 46 23 7900
North American Sales Representatives
Alabama M-Squared, Inc. - Huntsville Arizona QuadRep, Inc. California Costar - Northern Falcon Sales & Technology - San Marcos Westar Rep Company, Inc. - Calabasas Westar Rep Company, Inc. - Irvine Colorado Lange Sales, Inc. Florida M-Squared, Inc. - Clearwater M-Squared, Inc. - Coral Springs M-Squared, Inc. - Longwood Georgia M-Squared, Inc. - Atlanta Illinois Oasis Sales Corporation - Northern Rush & West Associates - Southern Indiana Applied Data Management Iowa Rush & West Associates Kansas Rush & West Associates Maryland Nexus Technology Sales Massachusetts A / D Sales Michigan Applied Data Management Minnesota Cahill, Schmitz & Cahill Missouri Rush & West Associates North Carolina M-Squared, Inc. - Charlotte M-Squared, Inc. - Raleigh New Jersey Nexus Technology Sales New Mexico QuadRep, Inc. New York Nexus Technology Sales Reagan / Compar - Endwell Reagan / Compar - E. Rochester Ohio Applied Data Management - Cincinnati Applied Data Management - Cleveland Oregon Thorson Pacific, Inc. Pennsylvania Nexus Technology Sales Texas Technical Marketing, Inc. - Carrollton Technical Marketing, Inc. - Houston Technical Marketing, Inc. - Austin Utah Lange Sales, Inc. Washington Thorson Pacific, Inc. Wisconsin Oasis Sales Corporation Canada Electronics Sales Professionals - Ottawa Electronics Sales Professionals - Toronto Electronics Sales Professionals - Montreal
Thorson Pacific, Inc. - B.C. (205) 830-0498 (602) 839-2102 (408) 946-9339 (760) 591-0504 (818) 880-0594 (949) 453-7900 (303) 795-3600 (727) 669-2408 (954) 753-5314 (407) 682-6662 (770) 447-6124 (847) 640-1850 (314) 965-3322 (317) 257-8949 (319) 398-9679 (913) 764-2700 (301) 663-4159 (978) 851-5400 (734) 741-9292 (612) 699-0200 (314) 965-3322 (704) 522-1150 (919) 848-4300 (201) 947-0151 (505) 332-2417 (516) 843-0100 (607) 754-2171 (716) 218-4370 (513) 579-8108 (440) 946-6812 (503) 293-9001 (215) 675-9600 (972) 387-3601 (713) 783-4497 (512) 343-6976 (801) 487-0843 (425) 603-9393 (414) 782-6660 (613) 828-6881 (905) 856-8448 (514) 388-6596 (604) 294-3999
Denmark C-88 AS France
A2M - Bron A2M - Sevres
Germany Endrich Bauelemente Vertriebs GMBH - Bramstedt
Endrich Bauelemente Vertriebs GMBH - Nagold
Revised 4-7-99
India Team Technology - Bangalore Team Technology - Hyderabad Team Technology - New Delhi Ireland Curragh Technology Israel Spectec Electronics Italy Carlo Gavazzi Cefra SpA Japan Asahi Electronics Co., Ltd. - Tokyo Asahi Electronics Co., Ltd. - Kitakyushu
Microtek, Inc. - Osaka Microtek, Inc. - Tokyo Ryoden Trading Co., Ltd. - Osaka Ryoden Trading Co., Ltd. - Tokyo Silicon Technology Co., Ltd.
Korea Bigshine Korea Co., Ltd. Malaysia MetaTech (M) SDN BHD
Serial System SDN BHD Serial System - Kuala Lumpur
Netherlands Memec Benelux Singapore MetaTech (S) Pte Ltd.
Serial System Ltd. (HQ)
South Africa KH Distributors Spain Tekelec Espana S.A. Switzerland Leading Technologies Taiwan, R.O.C. GCH-Sun Systems Co., Ltd. (GSS) PCT Limited Tonsam Corporation United Kingdom Ambar Components, Ltd.
Silicon Storage Technology, Inc. · 1171 Sonora Court · Sunnyvale, CA 94086 · Telephone 408-735-9110 · Fax 408-735-9036 www.SuperFlash.com or www.ssti.com · Literature FaxBack 888-221-1178, International 732-544-2873