General Temperature sensors 1996 File under Discrete Semiconducto

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General Temperature sensors 1996 File under Discrete Semiconducto

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General Temperature sensors
1996 File under Discrete Semiconductors, SC17
Philips Semiconductors
Temperature sensors
GENERAL
General
Fig.1 sensors.
With their high accuracy excellent long term stability, series silicon sensors spreading resistor technology provide attractive alternative more conventional sensors based technology. Their main advantages are: Long term stability batch process based technology Virtual linear characteristics. Table Drifts Sensors After 10000 hours permanent operation with nominal operating current maximum operating temperature. TYPE KTY81-1 KTY82-1 KTY81-2 KTY82-2 KTY83 KTY85 TYPICAL DRIFT 0.20 0.20 0.15 0.13 MAXIMUM DRIFT 0.50 0.80 0.40 0.25
properties temperature sensors based those chemical element silicon, therefore sensor behaviour stable this chemical element. This means that temperature drifts during lifetime products negligible. recent tests this been verified, when sensors operating their maximum operating temperature 10000 hours (equivalent 1.14 years) have shown typical drifts with maximum Long term stability Assuming that sensor typically used half specified maximum temperature, sensor will have drift described Table least 450000 hours (equals years). This calculation based Arrenius equation (activation energy eV). batch process products Because products based technology, indirectly benefit from progress this field, development microprocessors computer memory etc. Additionally, this indirect benefit also extends encapsulation technology, where trend towards miniaturization high volume manufacture.
1996
Philips Semiconductors
Temperature sensors
Virtual linear characteristics temperature sensors show virtually linear characteristic compared exponential characteristic NTCs (see Fig.2). This means that temperature sensors have (temperature coefficient) which nearly constant over complete temperature range. This characteristic ideally exploited when sensor used provide, example, temperature compensation microprocessor with integrated converter. Construction sensor: spreading resistance principle construction basic sensor chip shown Fig.3. chip size upper plane chip covered SiO2 insulation layer, which metallized hole with diameter been out. entire bottom plane metallized.
handbook, halfpage
General
MSA923
-100
Tamb (°C)
Fig.2 Characteristic KTY81.
handbook, full pagewidth
,,,,, ,,,,,, ,,,,, ,,,,,,
doping metallization oxide (isolation) resistivity
MBC923
line force equipotential plane
,,,,,,,,,,,
metallization doping plane provided with circular metal contact; entire bottom plane metallized.
Fig.3 Section through crystal showing spreading resistance principle electrode arrangement.
1996
Philips Semiconductors
Temperature sensors
MBC922
General
,,,,,,,, ,,,,,,,,
MBC920
Fig.4
Equivalent circuit symbolically representing spreading resistance principle shown Fig.3.
Fig.5
Setup consisting single sensors connected series, with opposite polarity.
This arrangement provides conical current distribution through crystal, hence name `spreading resistance' (see Fig.4). major advantage this arrangement that dependency sensor resistance manufacturing tolerances significantly reduced. dominant part resistance determined area close metallization hole which makes setup independent crystal dimension tolerances. region, diffused into crystal beneath metallization reduces barrier-layer effects metal-semiconductor junctions. Figure shows second arrangement, effectively consisting single sensors connected series, with opposite polarity, which advantage providing resistance that independent current direction. This contrast single-sensor arrangement Fig.3, which, larger currents temperatures above gives resistance that varies slightly with current direction. Normally, silicon temperature sensors have temperature limit imposed intrinsic semiconductor properties silicon. however, single-sensor device biased with metal contact positive, onset intrinsic semiconductor behaviour shifted higher temperature. This stems from fact that positive 1996
voltage gold contact severely depletes hole concentration upper diffusion layer, effectively insulates holes spontaneously generated within body crystal intrinsic nature. result holes prevented from contributing total current, hence from affecting resistance. twin-sensor arrangement shown Fig.5 been applied KTY81 KTY82 series. These sensors, SOD70 (KTY81) SOT23 (KTY82) packages (Figs therefore polarity independent. KTY83/84/85 series more basic single-sensor arrangement. simplicity this arrangement allows sensors produced compact SOD68; DO-34 (KTY83/84) SOD80 (KTY85) packages (Figs respectively). addition simplicity, another important advantage single-sensor device potential operation temperatures KTY84 makes this property, being specifically designed operation temperatures Table provides overview product characteristics.
Philips Semiconductors
Temperature sensors
Table Overview product characteristics 1000 1000 2000 1000 1000 (R100) 1000 AVAILABLE TOLERANCE Toper RANGE (°C)
General
FAMILY TYPE KTY81-1 KTY81-2 KTY82-1 KTY82-2 KTY83-1 KTY84-1 KTY85-1
PACKAGE SOD70 SOD70 SOT23 SOT23 SOD68 (DO-34) SOD68 (DO-34) SOD80
handbook, full pagewidth
13.6
0.05
1.65
0.04 2.54
0.61 0.05
MLC325
Terminal dimensions within this zone uncontrolled allow flow plastic terminal irregularities.
Fig.6 Outline KTY81 (SOD70).
1996
Philips Semiconductors
Temperature sensors
General
handbook, full pagewidth
0.150 0.090 0.95 0.48 0.38 VIEW
0.55 0.45
MBC846
Fig.7 Outline KTY82 (SOT23).
handbook, full pagewidth
0.55 25.4 3.04 25.4
MSA212
marking band indicates negative connector.
Fig.8 Outline KTY83/84 (SOD68; DO34).
andbook, full pagewidth
MBC669
Area tinned; small elevations possible. Indication negative connection product identity.
Fig.9 Outline KTY85 (SOD80).
1996
Philips Semiconductors
Temperature sensors
TEMPERATURE DEPENDENCY KTY83/85 series temperature sensors, mathematical expression sensor resistance `RT' function temperature given where: resistance temperature Rref nominal resistance reference temperature (Tref) Tref reference temperature (100 KTY84, other types) type-dependent coefficients. KTY81/82/84 series, slope characteristic curve decreases slightly upper temperature range above certain temperature (point inflection). Therefore, additional term equation becomes necessary: where: temperature above which slope characteristic curve starts decrease (point inflection). type-dependent coefficients.
General
types previously mentioned, type-dependent constants `A', `B', `D', well `TI', given Table high-precision applications, e.g. microcontroller-based control systems, above expressions values Table used generate calibration table store look-up linear interpolation. Data maximum expected temperature error supplied separately related data sheets. calculations based both specified resistance ratios (R25/R100 R25/R-55) basic resistance spread microcontroller used, slight deviation from linearity easily compensated using parallel resistor constant current source used), series resistor constant voltage source used) suitable combination both. This discussed Section "Linearization".
Table
Type dependent constants (K-1) 7.874 10-3 7.874 7.874 7.874 6.12 7.635 10-3 10-3 10-3 10-3 10-3 (K-2) 1.874 10-5 1.874 1.874 1.874 10-5 10-5 10-5 C(1) (K-D) 3.42 10-8 1.096 10-6 3.42 1.096 3.14 10-8 10-8 10-6 (°C)
SENSOR TYPE KTY81-1 KTY81-2 KTY82-1 KTY82-2 KTY83 KTY84 KTY85 Note
7.635 10-3
1.731 10-5 10-5 10-5 1.731
1996
Philips Semiconductors
Temperature sensors
RESISTANCE/TEMPERATURE CHARACTERISTICS Manufacturing tolerances Silicon temperature sensors normally produced quite fine tolerances: between ±0.5% ±2%. Figure illustrates these tolerances specified. tolerance resistance quoted data sheets given resistance spread measured Because spread slope resistance characteristics, will increase each side point, produce butterfly curve shown Fig.10. give indication this spread slope, also quote ratio resistance other temperatures (-55 nominal resistance i.e. `R-55/R25' `R100/R25'; KTY84, quote `R25/R100' `R250/R100'. table giving tolerances included each Temperature Sensor data sheets. user, however, usually more interested maximum expected temperature error `±T'. also provide this data sheets graph showing function `T'. high temperature sensor KTY84, specify resistance spread relation between tolerance resistance sensor resulting accuracy temperature measurement given temperature coefficient, Fig.10 shows typical situation. range between +150 temperature coefficient varies between about (-40 about 0.35 (+150 °C). From this graph relation between expected resistance tolerance resulting temperature error easily derived. calculated maximum temperature error given form table every data sheet. Current dependency sensor resistance resistance silicon temperature sensors dependent operating current. applications with operating current deviating from nominal current, deviation sensor resistance from nominal values taken into account. application, operating current recommended. lower operating currents, current dependency additionally influenced temperature. application with operating currents above nominal values, should noted, that additional error caused self-heating effects will influence measurement accuracy.
handbook, halfpage
General
MBH740
(°C)
Fig.10 Butterfly curve.
Polarity current KTY83, sensors marked with coloured band indicate polarity. published characteristics sensors will only obtained current polarity correct. events where current polarity incorrect, curve f(Tamb) differs upper temperature range significantly from published form. Note: Light, especially infrared light, also influence sensor characteristics when current polarity incorrect. Linearization resistance/temperature characteristics silicon temperature sensors nearly linear, some applications further linearization becomes necessary, e.g. control systems requiring high accuracy. simple this shunt sensor resistance `RT' with fixed resistor `RL' (see Fig.11a). resistance RT/(RL RT)' parallel combination then effectively becomes linear function temperature, output voltage `VT' linearized circuit used regulate control system. circuit powered constant-voltage source (see Fig.11b), linearization resistor connected series with sensor. voltages across sensor across resistor will then again approximately linear functions temperature. value series parallel resistor depends required operating temperature range sensor. method finding this resistance described below, giving zero temperature error three equidistant points
1996
Philips Semiconductors
Temperature sensors
General
handbook, full pagewidth
MLC328
With resistor `RL' shunted across sensor. With resistor `RL' series with sensor system powered constant-voltage source. With series `RS' parallel resistor `RP' system powered constant-voltage source.
Fig.11 Linearization sensor characteristics.
Consider parallel arrangement. With resistance sensor three points requirement linearity three points
example, Fig.12 shows deviation from linearity expected from nominal KTY81 sensor, linearized over temperature range with linearizing resistance 2870 Figure shows application example using series/parallel combination KTY81 mA). EFFECT TOLERANCES LINEARIZED SENSOR
same resistor will also suitable series arrangement. practice, current source expensive fixed supply voltage, e.g. used specific operating current, e.g. 0.1mA. this case, linearization achieved series/parallel resistor combination sensor (see Fig.11c). resistance parallel combination (RP, series resistor equal optimum linearization resistor calculated previously. Starting with value resistor with desired current through sensor reference temperature (preferably middle measured range), resistor calculated follows: series resistor: parallel resistor:
CHARACTERISTICS
practical applications with arbitrary sensor, total uncertainty sensor reading will combination spread manufacturing tolerances linearization errors. example, Fig.14 shows combined effects manufacturing tolerances linearization errors KTY81 sensor linearized over temperature range Calibration subsequent circuitry (op-amp, control circuitry, etc.) reduce this error significantly. Figure shows temperature error system with (linear) output circuitry calibrated Fig.16 shows error same system calibrated
1996
Philips Semiconductors
Temperature sensors
General
MLC329
MLC331
handbook, halfpage
handbook, halfpage
Sensor linearized over temperature range (linearizing resistance 2870
Fig.12 Linearization error expected from nominal KTY81 sensor.
Fig.13 Maximum temperature error manufacturing tolerances expected KTY81-1 sensor.
MLC330
MLC332
handbook, halfpage
handbook, halfpage
Fig.14 Combined effects manufacturing tolerances linearization errors KTY81 sensor.
Fig.15 Maximum expected temperature error KTY81-1 sensor plus linearization resistor calibrated
1996
Philips Semiconductors
Temperature sensors
General
Gain adjustment means potentiometer `R7'.
MLC333
handbook, halfpage
temperature sensor part amplifier's feedback loop thus increases amplification with increasing temperature. With resistor shown Fig.17 temperature dependent amplification given
temperature coefficient amplification calculated
with: temperature dependent resistance KTY82.
TCKTY temperature coefficient KTY82 reference temperature (0.79 °C). Fig.16 Error KTY81-1 sensor (same system Fig.15) calibrated bridge resistance magnetoresistive sensor.
TEMPERATURE COMPENSATION many applications, necessary compensate temperature dependency electronic circuitry. example, sensitivity many magnetic field sensors linear drift with temperature. compensate this drift, temperature sensor with linear characteristics required. temperature sensors series well suited this purpose used compensation both positive negative drift. many events, with magnetoresistive sensor KMZ10B, temperature drift negative. this sensor, circuits SMD-technology, which include temperature compensation, described below. formulae given used adapt circuits other conditions. Figure shows simple setup using single op-amp (NE5230D). circuit provides following facilities: Compensation average (sensor-to-sensor) sensitivity drift with temperature negative feedback loop incorporating KTY82-210 silicon temperature sensor Offset adjustment means potentiometers `R1' `R2'
temperature coefficient amplification must equal opposite magnetic field sensor's `TC' sensitivity. value resistor `RS', which determines positive `TC' amplification resistance feedback resistor derived from equation (2): temperature dependent values `RT' taken certain reference temperature, usually other applications different reference temperature more suitable. Figure shows example with commonly used instrumentation amplifier. circuit divided into stages: differential amplifier stage that produces symmetrical output signal derived from
1996
Philips Semiconductors
Temperature sensors
magnetoresistive sensor, output stage that also provides reference ground amplification stage. compensate negative sensor drift, amplification again given equal positive temperature coefficient means KTY81-110 silicon temperature sensor feedback loop differential amplifier. amplification input stage (`OP1' `OP2') given amplification complete amplifier positive temperature coefficient amplification
General
given negative `TC' magnetoresistive sensor required amplification input stage `A1', resistance `RA' `RB' calculated circuit provides adjustment gain offset voltage magnetic-field sensor. calculated resistance `RA' consists fixed resistor `R5' trimming resistor `R6' provided amplification adjustment. Amplification adjustment only negligibly influences `TC' amplifier. output stage `OP3' gives output voltage supply voltage zero output voltage magnetic field sensor output voltage other supply voltages circuit ratiometric behaviour.
Offset
handbook, full pagewidth
KMZ10B ampl.
KTY82
MLC427
Example: (typ.), 0.004 K-1.
Fig.17 Temperature compensation circuit.
1996
Philips Semiconductors
Temperature sensors
General
handbook, full pagewidth
KTY82-110
offset
KMZ10B
MLC145
Example: (typ.), 0.004 K-1.
Fig.18 KMZ10B evaluation circuit with instrumentation amplifier.
TYPICAL APPLICATION CIRCUIT Figure shows typical versatile temperature measuring circuit using silicon temperature sensors. This example designed KTY81-110 KTY82-110) temperature range from With resistors `R1' `R2', sensor forms bridge, other being formed resistor `R3', potentiometer `P1' resistor `R4'. values `R1' `R2' chosen supply sensor with proper current linearize sensor characteristic over temperature range interest: this event, between Over this temperature range, output voltage will vary linearly between 0.2VS 0.6VS, i.e. between supply
calibrate circuit, adjust `P1' `VO' with sensor Then, temperature adjust `P2' `VO' corresponding output voltage, this example With this circuit, adjustment `P2' effect zero adjustment. measurement accuracy obtained this two-point calibration shown Fig.16. application tolerate temperature deviation temperature extremes (see Fig.15), costs reduced replacing `P2' with fixed resistor adjusting `VO' temperature (the middle range, example), using `P1'.
1996
Philips Semiconductors
Temperature sensors
General
handbook, full pagewidth
fixed resistor NE532 KTY81-110
MLC731
KTY82-110 sensor would equally suitable. Temperature range 0.2VS 0.6VS. resistors metal film; tolerance ±1%.
Fig.19 Temperature measuring circuit using KTY81-110 sensor.
HIGH TEMPERATURE MEASUREMENT WITH KTY84 operating range silicon temperature sensors normally limited about exception KTY83 with upper temperature limit °C). This temperature stability package increasing intrinsic conductivity silicon above measuring range KTY84 silicon temperature sensors, however, extended SOD68 (DO-34) diode housing together with special contacts between leads sensor give necessary temperature resistivity package. influence intrinsic conductivity suppressed sufficiently high operating current flowing correct direction. Figure shows nominal characteristic recommended operating current effect operating sensor with lower, especially, reverse current. sensor resistance high temperature makes impossible draw current through sensor common bridge circuit previously suggested circuits. This usually limited supply voltage fact that value series resistor less than linearization resistor solution supply sensor constant current source.
MLC150
handbook, halfpage
operating current
KTY84
Tamb
Fig.20 Sensor characteristic KTY84.
1996
Philips Semiconductors
Temperature sensors
Figure gives example with internal voltage stabilization, supply voltage full measuring range Operational amplifier `OP1' transistor `TR1' form current source feed temperature sensor. `OP2' amplifies bridge signal output voltage range. circuit provides adjustment `zero point'; equals (`P1'), full range (`P2'). second example KTY84 evaluation circuit takes into consideration that some electronic systems supply voltage only used. Under such circumstances would impossible obtain
General
recommended current compromise suggested circuit Fig.22. drop current source supplies temperature sensor linearization resistor. maximum attainable current This value below nominal operating current, Fig.20 shows, this will cause additional measuring error. Between however, slightly decreasing slope sensor characteristic taken into account. KTY84 silicon temperature sensor reliable cost effective alternative more expensive options such Pt100-resistors thermocouplers.
handbook, full pagewidth
NE532 LP2951CM
BC558B
(for
KTY84
NE532
MLC148
Fig.21 Evaluation circuit with voltage regulation.
1996
Philips Semiconductors
Temperature sensors
General
handbook, full pagewidth
NE532
MLC149
BC558
(for
KTY84
NE532
Fig.22 KTY84 evaluation circuit power supply.
CONVERTER TEMPERATURE COMPENSATION When converter integrated with microcontroller, temperature compensation required. Figure shows suitable configuration, using KTY81-210 temperature sensor series with linearization resistor This voltage divider provides linear temperature dependent voltage between 1.127 1.886 over range This voltage used reference converter. linear slope 7.59 ADDITIONAL TEMPERATURE SENSOR APPLICATIONS Philips temperature sensors also suitable number other applications, which information supplied request: Electronic circuit protection Protection power supplies Domestic appliances white goods industry automotive industry. Fig.23 Temperature compensation converters.
handbook, halfpage
analog input KTY81-210 MICROCONTROLLER WITH CONVERTER
MLC767
1996
Philips Semiconductors
Temperature sensors
MOUNTING HANDLING RECOMMENDATIONS Mounting KTY81 When potting techniques KTY81 sensors used assembling, care taken ensure that mechanical stress temperature development during curing epoxy resin overstress devices. KTY83 Excessive forces applied sensor cause serious damage. avoid this, following recommendations should adhered perpendicular forces must applied body During bending, leads must supported Bending close body must done very carefully Axial forces body influence accuracy sensor should avoided These sensors mounted minimum pitch (2E). Handling ELECTROSTATIC DISCHARGE (ESD) SENSITIVITY Electrostatic discharges above certain energy lead irreversible changes sensor characteristic. extreme events, sensors even destroyed. accordance with test methods described (CO)955, temperature sensors classified sensitive components with respect ESD. During handling (testing, transporting, fitting), common rules handling sensitive components should observed. necessary, sensitivity practical application further reduced connecting capacitor parallel sensor. Soldering KTY81 common rules soldering components TO-92 packages should observed. common rules soldering components SOT23 packages should observed. KTY83
General
Avoid force body leads during, just after, soldering. correct position already soldered sensor pushing, pulling twisting body. Prevent fast cooling after soldering. hand soldering, where mounting printed-circuit board, soldering temperature should <300 soldering time distance between body soldering point >1.5 hand soldering, dip, wave other bath soldering, mounted printed-circuit board, soldering temperature should <300 soldering time distance between body soldering point >1.5 KTY85 common rules surface mounted devices SOD80 packages should observed. Hand soldering recommended, because there great risk damaging glass body inner construction uncontrolled temperature time. Welding KTY84 sensors manufactured with nickel plated leads suitable welding. distance between body welding point should >0.5 Care should taken ensure that welding current never passes through sensor.
1996
Philips Semiconductors
Temperature sensors
TAPE REEL PACKAGING
General
Tape reel packaging meets feed requirements automatic pick place equipment. also ideal shipping container. Table Packaging quantities PACKAGE OUTLINE SOD70 SOT23 bulk pack reel pack, radial KTY82 bulk pack reel pack, profile reel pack, profile KTY83, KTY85 SOD68 (DO-34) SOD80 reel pack axial ammopack axial small size bulk pack reel pack, SMD, 111/
TYPE KTY81
PACKAGING METHOD
2000 3000 10000 10000 1000 1000 2500
4000 10000 25000 3000 10000 10000 1000 10000 2500
12NC NUMBER XXXX
1996

General Temperature sensors 1996 File under Discrete Semiconducto

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