IXGX 40N60BD1 VCES IC25 VCE(sat) tfi(typ) Symbol VCGR VGES VGEM C
|
|
|
Top Searches for this datasheet
HiPerFAST IGBT with Diode
IXGX 40N60BD1 VCES IC25 VCE(sat) tfi(typ)
Symbol VCGR VGES VGEM C110 SSOA (RBSOA) Tstg Weight
Test Conditions 25°C 150°C 25°C 150°C; Continuous Transient 25°C 110°C 25°C, 125°C, Clamped inductive load 25°C
Maximum Ratings VCES +150 +150
PLUS247 (IXGX)
(TAB)
Gate Emitter
Collector Collector
Features
International standard packages
Mounting torque, TO-264
1.13/10 Nm/lb.in.
Maximum lead temperature soldering (0.062 in.) from case
JEDEC TO-268 PLUS247 (holeless TO-247) High frequency IGBT antparallel FRED package generation HDMOSprocess High current handling capability Gate turn-on fordrive simplicity Fast Recovery Epitaxial Diode (FRED) with soft recovery
Applications Symbol Test Conditions Characteristic Values 25°C, unless otherwise specified) Min. Typ. Max. 25°C 125°C ±100
BVCES VGE(th) VCE(sat)
motor speed control servo robot drives choppers Uninterruptible power supplies (UPS) Switch-mode resonant-mode
power supplies
VCES
Advantages
IC90, Pulse test, 300ms,duty cycle
Space savings (two devices Easy mount with screw
98801 (01/01)
package
2001 IXYS rights reserved
IXGX 40N60BD1
Symbol Test Conditions Characteristic Values 25°C, unless otherwise specified) Min. Typ. Max. 3300 IC90, VCES
Dim.
PLUS247 Outline
Cies Coes Cres td(on) td(off) Eoff td(on) td(off) Eoff RthJC RthCK
IC90; Pulse test, duty cycle
Terminals:
Inductive load, 25°C IC90, VCES, Roff Remarks: Switching times increase (Clamp) VCES, higher increased Inductive load, 125°C IC90, VCES, Roff Remarks: Switching times increase (Clamp) VCES, higher increased
Gate Drain (Collector) Source (Emitter) Drain (Collector)
0.50
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 .780 .800 .150 .170 .220 0.244 .170 .190
0.15
Reverse Diode (FRED) Symbol RthJC Test Conditions
Characteristic Values 25°C, unless otherwise specified) min. typ. max. 0.65
IC90, 150°C Pulse test, duty cycle IC90, -diF/dt A/ms, -di/dt A/ms;
IXYS reserves right change limits, test conditions, dimensions.
IXYS MOSFETS IGBTs covered more following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
Other recent searches
TSB12LV32 - TSB12LV32 TSB12LV32 Datasheet
SN74LS14 - SN74LS14 SN74LS14 Datasheet
SBFS017A - SBFS017A SBFS017A Datasheet
SKL20241 - SKL20241 SKL20241 Datasheet
2004 - 2004 2004 Datasheet
2SD1235 - 2SD1235 2SD1235 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
