HSKF1118 Description Field Effect Transistor. Silicon Channe

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HSKF1118 Description Field Effect Transistor. Silicon Channe

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Spec. Preliminary Data Issued Date 1998.02.01 Revised Date 1999.08.01 Page
HSKF1118
Description
Field Effect Transistor. Silicon Channel Type. High Speed, High Current DC-DC Converter, Relay Drive Motor Drive Applications
Features
4-Volt Gate Drive Drain-Source Resistanc RDS(on)=0.95 (Typ.) High Forward Transfer Admittance |=4.0S (Typ.) Leakage Current IDSS 300uA (Max.) @VDS 600V Enhancement-Mode 1.5~3.5V @VDS 10V,
Absolute Maximum Ratings (Ta=25°C)
Maximum Temperatures Storage Temperature -55~+150 Junction Temperature .150 Maximum Power Dissipation Total Power Dissipation (Tc=25°C) Maximum Voltages Currents (Tc=25°C) DRAIN SOURCE Breakdown Voltage DRAIN GATE Breakdown Voltage GATE SOURCE Voltage DRAIN Current (Cont.). DRAIN Current (Pluse)
Thermal Characteristics
Characteristic Junction Case Junction Ambient Symbol Max. 2.77 62.5 Units °C/W °C/W
Note This transistor electrostatic sensitive device. Please handle with care.
HSMC Product Specification
Characteristics (Ta=25°C)
Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source Voltage On-State Drain Current Drain-Source Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Symbol V(BR)DSS VGS(th) IDSS IGSS VDS(ON) ID(ON) RDS(ON) Ciss Crss Coss Switching Time Toff Total Gate Charge (Gate-Source Plus Gate-Drain) Gate-Source Charge Gate-Drain Charge (Miller) Min. Typ. Max. Unit ±100 0.95 1.25 2000
Spec. Preliminary Data Issued Date 1998.02.01 Revised Date 1999.08.01 Page
Test Conditions ID=250uA VDS=10V, ID=1mA VDS=600V VGS=±25V ID=5.0A, VG=10V VDS=10V, VGS=10V VGS=10V, ID=3A VDS=10V ,VGS=0V =1.0MHz
Tf<5nS VDD=300V, ID=3A VGS=10V Duty1%, tw=10uS ID=6A VDS=400V VGS=10V
Characteristics Curve
On-Region Characteristic
VGS=10V 5.5V VGS=6V 5.5V
On-Region Characteristic
Drain-Source Current
Drain-Source Current
4.5V
4.5V
Drain-Source Voltage
,Drain-Source Voltage
HSMC Product Specification
Spec. Preliminary Data Issued Date 1998.02.01 Revised Date 1999.08.01 Page
Drain Current Variation Gate Voltage Temperature
VDS=10V Tc=100°C
Transconductance Variation Drain Current Temperature
VDS=10V
Tc=25°C
Drain-Source Current
gFS,Transconductance
Tc=25°C
Tc=100°C
VGS, Gate-Source Voltage
Drain Current
Resistance Variation Temperature
VGS=10V
Capacitance Characteristics
10000
RDS(ON) Normalized Drain-Source OnResistance
Ciss
ID=3A ID=6A ID=1A
1000
Capacitance (pF)
Coss
Crss
Case Temperature (°C)
VDS, Drain-Source Voltage
Typical On-Resistance Drain Current
Typical On-Resistance Drain Current
RDS(ON) Drain-Source On-Resistance
RDS(ON) Drain-Source On-Resistance
VGS=10V Tc=100°C
Tc=25°C
VGS=10V VGS=15V
Drain Current
Drain Current
HSMC Product Specification
Spec. Preliminary Data Issued Date 1998.02.01 Revised Date 1999.08.01 Page
Breakdown Voltage Variation Temperature
1.20
Body Diode Forward Voltage Variation Current Temperature
Tc=100°C
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15
,Reverse Drain Current
Tc=25°C
1.10
1.05
1.00
0.95
Case Temperature (°C)
Body Diode Forward Voltage
Maximum Safe Operating Area (TO-220
100.00
VGS=10V ngle Pulse Tc=25°C
Dynamic Input /Output Characteristics
ID=6A Tc=25°C
10.00
Gate-Source Voltage
,Drain-Source Current
100us
VDD=240V VDD=120V VDD=400V
RDS(on) Line
10ms 100ms
1.00
0.10
0.01 1000 10000
,Drain-Source Voltage
Total Gate Charge (nC)
Transient Thermal Response Curve(TO-220FP)
1.00
r(t) Normalized Effective Transient Thermal Resistance
0.10 0.05
RJC(t) r(t) RJC(t) =2.46
P(pk)
0.02
0.01 Single Pulse 0.01
TJ-TC=P*RJC(t) Duty Cycle, D=t1/t2
1000
,Time(ms)
HSMC Product Specification
TO-220FP Dimension
Spec. Preliminary Data Issued Date 1998.02.01 Revised Date 1999.08.01 Page
Marking
HSMC Logo Part Number Date Code Product Series Rank
Style 1.Gate 2.Drain 3.Source
3-Lead TO-220FP Plastic Package HSMC Package Code
*:Typical
Inches Min. 0.2480 0.3386 0.1673 0.1043 0.0230 0.3980 0.1083 0.3386 Max. 0.2520 0.3425 0.1870 0.1083 0.0242 0.4039 0.1122 0.3425 *0.1496 *0.0236
Millimeters Min. Max. 6.30 6.40 8.60 8.70 4.25 4.75 2.65 2.75 0.58 0.61 10.11 10.26 2.75 2.85 8.60 8.70 *3.80 *0.60
Inches Min. 0.5118 0.5886 0.1098 Max. *0.1004 0.5906 0.5925 *0.0669 0.1114 *15°
Millimeters Min. Max. *2.55 13.00 15.00 14.95 15.05 *1.70 2.79 2.83 *15°
Notes 1.Dimension tolerance based Spec. dated Sep. 07,1997.
2.Controlling dimension millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material
Lead Alloy solder plating Mold Compound Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory
Head Office (Hi-Sincerity Microelectronics Corp.) 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. 886-2-25212056 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5983621~5 886-3-5982931 Factory 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5977061 886-3-5979220
HSMC Product Specification

HSKF1118 Description Field Effect Transistor. Silicon Channe

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