PRODUCT DESCRIPTION (for qualification) Information provided this
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RAM2.8 TRANSISTOR RAM2.5 PROCESS
PRODUCT DESCRIPTION (for qualification)
Information provided this document intended generic qualification technically describes Cypress part supplied: Marketing Part Device Description: Cypress Division: Size (stepping): CY7C199 Static Cypress Semiconductor Corporation Rev. 7C199C Jan/1995 Jan/1995 mils mils What markings Die:
Overall Mask) Level (pre-requisite qualification): Cypress Qualification completion/Marketing Availability Dates (Current REV):
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number Metal Layers: Passivation Type Materials: Free Phosphorus contents glass layer(%): Coating(s), used: Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process Polymide CMOS, Double Poly, Double Metal /0.65 SiO2 Cypress Semiconductor Bloomington, Fab3/R28 Generic Process Technology/Design Rule (µ-drawn): Metal Composition: Metal Ti/TiW/Al-Si, 500A/1.2KA/6KA/ Metal TiW/Al-Si/Ti, 1.2KA/10KA/150A
7000A TEOS 6000A Si2N4
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CYPRESS SEMICONDUCTOR
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Name/Location Assembly (prime) facility: Assembly Line Process Paste Thermosonic Copper Solder Plated, 85%Sn, 15%Pb Silver Spot Attach Dim: Attach Material: Wire Material/Size: Omedata, Indonesia INDNS-O V28317AGB mils mils Silver Epoxy Gold 28-pin, 300-mil mils side Sumitomo EME-6300H(R)
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Name/Location Assembly (prime) facility: Assembly Line Process Paste Thermosonic Copper Solder Plated, 85%Sn, 15%Pb Silver Spot Attach Dim: Attach Material: Wire Material/Size: Omedata, Indonesia INDNS-O P28310AGB mils mils Silver Epoxy Gold 28-pin, 300-mil PDIP mils side Sumitomo EME-6300H(R)
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CYPRESS SEMICONDUCTOR
OTHER INFORMATION
approval similarity, identify other devices using same basic with bonding metal mask options test selections explain: CY7C108*, CY7C1399*, CY7C1597*, CY7C197*. CY7C627* Cypress planning changes near future, identify change (Qtr/Yr) Design Rev./Shrink: Fab/Assembly site change: Other Devices qualified this technology: Other Packages qualified this device: Voltage Rating (per STD-008, Method 3018): Flammability Classification (UL-94V): Alternate Fab/Assembly Locations: None Assembly Alphatec, Thailand 2,200V Process Change: Cross Licensee/Licensor:
Please attach following Qualification Reliability data revision Package type, assembly sites identified above (mark included): HAST (5.5V, 140°C, 85%RH, 15psig) Temperature Cycles (-65°C 150°C) Long Life Verification (5.75V, 150°C) Cold Life Test (6.5V, -45°C) Read Record Life Test (5.5V, 150°C) Autoclave (PCT, 121°C, 100%RH) Operating Life (temp): Steady State Life (HTSSL, 5.75V, 150°C) Latchup Testing ESD-HMB Tests (MIL-STD 883, method 3015) ESD-CDM Tests Other: Accelerated Soft Error Current Density Aged Bond Strength Analysis 150°C
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CYPRESS SEMICONDUCTOR
Marketing Part: Description:
CY7C199 28-pin, 300-mil SOJ/PC
DEVICE RELIABILITY SUMMARY
Wafer Fab: Assembly:
Bloomington, Omedata, Indonesia
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Early Failure Rate Lot# 3443978 3441781 3442872 Hours 0/298 0/271 0/744 Cumulative 0/1313
Device
Assy Lot#
CY7C199-PC 349415285 CY7C199-VC 349414005 CY7C199-VC 349414597
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Latent Failure Rate Lot# 3443978 3441781 3442872 Hours 0/116 0/134 0/116 Hours 1000 Hours 0/116 0/134 0/116 Cumulative 0/483 0/134
Device
Assy Lot#
CY7C199-PC 349415285 CY7C199-VC 349414005 CY7C199-VC 349414597
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Latent Failure Rate Device Assy Lot# Lot# 3435229
Hours 0/118
Hours 0/118
Cumulative 0/118
CY7C199-PC 349412994
High Temperature Steady State Life Test (HTSSL, 5.75V, 150°C) Lot# 3443978 3441781 3442872 Hours 0/76 0/81 0/81 Hours 0/76 0/81 0/81 Cumulative 0/238
Device CY7C199-PC CY7C199-VC CY7C199-VC
Assy Lot# 349315285 349314005 349414597
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CYPRESS SEMICONDUCTOR
Marketing Part: Description:
CY7C199 28-pin, 300-mil SOJ/PC
DEVICE RELIABILITY SUMMARY
Wafer Fab: Assembly:
Bloomington, Omedata, Indonesia
Temperature Cycle (Condition -65°C 150°C), Pecondition Hrs. (121°C, 100% Assy Lot# 349414005 349414597 Lot# 3441781 3442872
Device CY7C199-VC CY7C199-VC
0/54 0/45
1000 0/531 0/45
Cummulative 0/99
Temperature Cycle (Condition -65°C 150°C) 0/45 0/44 0/45
Device CY7C199-PC CY7C199-PC CY7C199-PC
Assy Lot# 349415285 349415706 349415943
Lot# 3441781 3442872 3447175
1000 0/45 0/44 0/45
Cummulative 0/134
Autoclave (PCT, bias, 121°C, 100%RH, 15psig), Precondion Cys. (-65°C 150°C) Assy Lot# 349414005 349414597 Lot# 3441781 3442872 Hours 0/54 0/45 Cumulative 0/99
Device CY7C199-VC CY7C199-VC
High Accelerated Saturation Test (HAST, 5.5V, 140°C, 85%RH, 15psig), Precond. Hrs. (121°C, 100% Device Assy Lot# 349414005 349414597 Lot# 3441781 3442872 Hours 0/54 0/45 Cumulative 0/99
CY7C199-VC CY7C199-VC
High Accelerated Saturation Test (HAST, 5.5V, 140°C, 85%RH, 15psig), Precond. Temp. Cycles Device CY7C199-PC
Assy Lot# 349412994
Lot# 3435229
Hours 0/45
Cumulative 0/45
Mechanical reject. Mechanical reject.
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CYPRESS SEMICONDUCTOR
Marketing Part: Description:
DEVICE RELIABILITY SUMMARY CY7C199 Wafer Fab: 28-pin, 300-mil SOJ/PC Assembly:
Bloomington, Omedata, Indonesia
Read Record (5.75V, 150°C) Hours 0/10 Hours 0/10 Hours 0/10 Cumulative 0/10
Device CY7C199-VC
Assy Lot# 49403634
Lot# 3406190
Cold Life Test (LTOL, 6.5V, -45°C) Hours 0/45 1000 Hours 0/45 Cumulative 0/45
Device CY7C199-PC
Assy Lot# 349415285
Lot# 3443978
Long Life Verification (LLVA, 5.75V, 150°C) 1000 Hours 0/135 Cumulative 0/135
Device CY7C199-VC
Assy Lot# 349414005
Lot# 3441781
PAGE
CYPRESS SEMICONDUCTOR
Marketing Part: Description:
CY7C199 28-pin, 300-mil SOJ/PC
DEVICE RELIABILITY SUMMARY
Wafer Fab: Assembly:
Bloommington, Omedata, Indonesia
Electrostatic Discharge Human Body Model Circuit 883, Method 3015 >+2,200V >+2,200V >+2,200V >+1500V >+1500V >+1500V Unit Unit Unit Charge Device Moel Unit Unit Unit >-2,200V >-2,200V >-2,200V >-1500V >-1500V >-1500V
Latchup Testing Cypress Internal Latch-up Procedure Tests: Current Injection 200mA Trigger Socket Temp 125°C
Miscellaneous Results Accelerated Soft Error Current Density Aged Bond Strength Analysis JESD22-A112 Moisture Sensitivity Level Pass Pass Pass Pass
256K Ram2.8 Qualification, #94453
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