PRODUCT DESCRIPTION (for qualification) Information provided this
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MATRA HARRIS PALC22V10D
PRODUCT DESCRIPTION (for qualification)
Information provided this document intended generic qualification technically describes Cypress part supplied: Marketing Part Cypress Division: Size (stepping): PALC22V10D Cypress Semiconductor Corporation, Group 7C3221E 7C322D mils mils What markings Die: Device Description: FLASH ERASABLE REPROGRAMABLE CMOS Overall Mask) Level (pre-requisite qualification): Cypress Qualification completion/Marketing Availability Dates (Current REV):
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number Metal Layers: Metal Composition: Metal 1200A TiW, 6,000A 500A Metal 1,200A 9,000A
Passivation Type Materials: Free Phosphorus contents glass layer(%): Coating(s), used: None
3,000A TEOS 15,000A Oxynitride Double Poly, Double Metal 0.65µm
Generic Process Technology/Design Rule (µ-drawn): Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process
SiO2 Control gate Pass gate Erase gate Mattra Harris, France (Fab FLASH22D
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PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Assembly Line Process Name/Location Assembly (prime) facility: Epoxy Thermocompression Silver Copper Solder Dipped, 63%Sn, 37%Pb Attach Dim: Attach Material: Wire Material/Size: Omedata, Indonesia INDNS-O P243A PDIP: mils mils Silver Epoxy Gold 24-pin, 300-mil Plastic mils side; y=21.5 mils side Sumitomo EME-6300H(R)
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OTHER INFORMATION
approval similarity, identify other devices using same basic with bonding metal mask options test selections explain:
Cypress planning changes near future, identify change (Qtr/Yr) Design Rev./Shrink: Fab/Assembly site change: Other Devices qualified this technology: Other Packages qualified this device: Voltage Rating (per STD-008, Method 3018): Flammability Classification (UL-94V): Alternate Fab/Assembly Locations: Assembly: Cypress Bangkok, Thailand (PDIP) Anam, Korea/Hyundai, Korea (PLCC) PLCC 2,200V (HBM) 1,500V (CDM) Process Change: Cross Licensee/Licensor:
Please attach following Qualification Reliability data revision Package type, assembly sites identified above (mark included): HAST (5.5V, 140°C, 85%RH, 15psig) Temperature Cycles (-65°C 150°C) Data Retention Bake, Plastic (165°C) Long Life Verification (5.75V, 150°C) Autoclave (PCT, 121°C, 100%RH) Tests (MIL-STD 883, method 3015) Operating Life (temp): Latchup Testing Steady State Life (HTSSL, 5.75V, 150°C) Cold Life Test (-45°C, 6.5V) Other: Aged Bond Strength Current Density 150°C
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PRODUCT INFORMATION QUALIFICATION SIMILARITY
Product Family: Division: Supplier's Part Number Flash CMOS (PALC22V10D) Cypress Semiconductor Rated Speed Size/ Type Revision Size (stepping) Design Rule Fabrication Passivation Mold Type Compound Assembly Line Location Volt Rating
Process Line PALC22V10D-PC PALC22V10D-JC 24.3 PDIP PLCC 7C3221E 0.65µ FLASH Plasma Oxynitride Sumitomo Omedata-Indonesia Anam-Korea 2200V 1500V
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DEVICE RELIABILITY SUMMARY
Device Type(s): Description: PALC22V10D 24-pin Plastic DIP, 300-mil Wafer Fab: Assembly: Mattra Harris, France Omedata, Indonesia
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Early Failure Rate Device PALC22V10D-PC PALC22V10D-PC PALC22V10D-PC PALC22V10D-PC Lot# 9441081 9442083 9443084 9443084 Assy Lot# 349413168 349413496 349414067 349501766 Hours 0/524 0/451 0/73 0/677 Cumulative 0/17171
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Latent Failure Rate Device PALC22V10D-PC PALC22V10D-PC PALC22V10D-PC Lot# 9441091 9442083 9504085 Assy 349413168 349413496 349501766 Hours 0/118 0/119 0/1182 Hours 0/118 0/119 0/1163 Cumulative 0/353
High Temperature Steady State Life Test (HTSSL, 5.75V, 150°C) Device PALC22V10D-PC PALC22V10D-PC PALC22V10D-PC PALC22V10D-PC Lot# 9441081 9442083 9443084 9504085 Assy Lot# 349413168 349413496 349414067 349501766 Hours 0/844 0/85 0/85 0/83 Hours 0/825 0/85 0/85 0/83 Cumulative 0/335
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DEVICE RELIABILITY SUMMARY
Device Type(s): Description: PALC22V10D 24-pin Plastic DIP, 300-mil Wafer Fab: Assembly: Mattra Harris, France Omedata, Indonesia
Temperature Cycle (Condition -65°C 150°C) Device PALC22V10D-PC PALC22V10D-PC PALC22V10D-PC PALC22V10D-PC Lot# 9441081 9442083 9443084 9504085 Assy Lot# 349413168 349413496 349414067 349501766 Cycles 0/51 0/51 0/51 0/45 1000 Cycles 0/51 0/51 0/51 0/45 Cumulative 0/198
Data Retention Bake, Plastic Package Device bias, 165°C) Device PALC22V10D-PC PALC22V10D-PC PALC22V10D-PC PALC22V10D-PC Lot# 9441081 9442083 9443084 9504085 Assy Lot# 349413168 349413496 349414067 349501766 Cycles 0/85 0/85 0/85 0/80 Hours 0/85 0/85 0/85 0/80 Hours Cumulative 0/335
Autoclave (PCT, bias, 121°C, 100% psig), precondition Temperature Cycles, Cond. Device PALC22V10D-PC PALC22V10D-PC Lot# 9441081 9442083 Assy Lot# 349413168 349413496 Hours 0/51 0/51 Hours 0/51 0/51 Cumulative 0/102
High Accelerated Saturation Test (HAST, 5.5V, 140°C, psig), precondition Temperature Cycles Cond. Device PALC22V10D-PC PALC22V10D-PC Lot# 9441081 9442083 Assy Lot# 349413168 349413496 Hours 0/51 0/48 Cumulative 0/99
Long Life Verification (LLVA, 5.75V, 150°C) Device PALC22V10D-PC Lot# 9504085 Assy Lot# 349501766 1000 Hours 0/116 Cumulative 0/116
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DEVICE RELIABILITY SUMMARY
Device Type(s): Description: PALC22V10D 24-pin Plastic DIP, 300-mil Wafer Fab: Assembly: Mattra Harris, France Omedata, Indonesia
Cold Life Test (LTOL, 6.5V, -45°C) Device PALC22V10D-PC Lot# 9441081 Assy Lot# 349413168 Hours 0/51 1000 Hours 0/51 Cumulative 0/51
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DEVICE RELIABILITY SUMMARY
Device Type(s): Description: PALC22V10D 24-pin Plastic DIP, 300-mil Wafer Fab: Assembly: Mattra Harris, France Omedata, Indonesia
Electrostatic Discharge Human Body Model Circuit 883, Method 3015 +2200V +2200V +2200V >+1500V >+1500V >+1500V Unit Unit Unit Charge Device Model Circuit Unit Unit Unit -2200V -2200V -2200V -1500V -1500V -1500V
Latchup Testing Cypress Internal Latch-up Procedure Tests: Current Injection 200mA Trigger Socket Temp 125°C
Other miscellaneous tests Bond Strength Passed Current Density Passed
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