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Serge Juhel ABSTRACT This application note gives description broa
Top Searches for this datasheetSD2932 MOSFET 300W AMPLIFIER Serge Juhel ABSTRACT This application note gives description broadband power amplifier operating over frequency range using STMicroelectronics MOSFET transistor SD2932. Table Typical Acheivable Performances Device Frequency Pout Gain Input Return Loss Drain Efficiency SD2932 88-108 <-11 >70% AMPLIFIER DESIGN. 2.1. Input Matching Network. Typical input gate gate impedance SD2932 also expressed combination parallel resistance reactance using following formulae 5.38 ohms -4.14 ohms Therefore, order achieve good input matching performances over frequency range 88-108 unbalanced ohms transformed into impedance with value close possible 5.38 ohms. From circuit schematic given Fig. that input matching network based section balun (1:1 balun cascade with balun transformer) which will transform unbalanced ohms balanced 5.56 ohms 2.78 ohms ratio). first section, long ohms coaxial cable second section, 3.9" long ohms flexible coaxial cables with ferrite core NEOSIDE, connected described: inductor (L1) connected between gates compensate SD2932 input parallel reactance quasi-neutral region junction. breakdown-voltage regime avalanching carriers electric field being greater than critical electric field (approximately 1x10 V/cm). Under these conditions electron accelerated electric field. July 2000 AN1229 APPLICATION NOTE elastic inelastic scattering this electron acceleration generate more than carrier thus multiplication scheme transpires. 2.2. Input Matching Network Tuning. Figure Input Impedance Balun Cascade with Balun (dB) Frequency (MHz) Figure Input Impedance Balun Cascade with Balun (dB) Frequency (MHz) SD2932 input matching network tuned order achieve best compromise terms power gain (Gp) input return loss (Rtl) over frequency range MHz. Best results were achieved adding chip capacitor (C1) between RFIN blocking capacitor (C2). 2.3. Output Matching Network. output impedance each side combination output capacitance Coss (195 optimum load resistance which determined follows (0.85 Pout) (0.85 50V) 150W) 6.02 ohms total optimum load seen SD2932 (drain drain) 6.02 12.04 ohms. Therefore, simple section balun (1:1 balun cascade with balun transformer) used transform unbalanced ohms balanced 12.5 ohms 6.25 ohms) which very near total optimum load resistance. AN1229 APPLICATION NOTE first section, long ohms flexible coaxial cable, second section, long ohms flexible coaxial cables, connected described figure compensate output capacitance SD2932 40nH inductor (L2) connected between drains. This network Coss) high pass filter with resonance frequency calculated below minimum operating frequency Coss=C (per side)/2 pF/2 Frequency resonance 0.9x88MHz=80MHz Coss 1->L2 44nH. Figure Power Gain Frequency Power Gain (dB) Pout 300W Frequency (MHz) Figure Drain Efficiency Frequency Drain Efficiency Pout 300W Frequency (MHz) AN1229 APPLICATION NOTE Figure Input Return Loss Frequency Return Loss (dB) Pout 300W Frequency (MHz) MEASURED SD2932 TYPICAL PERFORMANCES CONCLUSION. Figures show power gain, efficiency input return loss over frequency range constant output power Watts drain supply voltage Volts quiescent current Typical performances follows: Table 19.3dB -18dB 19.6dB -11dB Finally, this report have demonstrated SD2932 MOSFET transistor excellent performance wide band 300W push-pull amplifier applications. Figure 88-108MHz Circuit Schematic AN1229 APPLICATION NOTE Table 88-108MHz Circuit Components List C2/C3/C4/C7/C8 C5/C6 R2/R4 1/32" Woven Fiberglass 0.0030 side, Flexible Coax Cable 0.006", Long Transformer, Flexible Coax Cable 0.1" 3.9". Ferrite Core NEOSIDE Transformer, Flexible Coax Cable 0.1" 5.0" Long. Flexible Coax Cable 0.1" 5.0" Long. VK200 10pf Ceramic Capacitor Chip Capacitor chip Capacitor Chip Capacitor Chip Capacitor Resistor Chip Resistor Resistor 5.6K Resistor Ohm. Turn Trim Resistor 3.3K Ohm/ Resistor Ohm/ Resistor Zener Diode Inductor Inductor Inductor Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. 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