Matteo Uccelli TDE1707 power switch I.P.S) especially dedicated p
|
|
|
Top Searches for this datasheet
TDE1707 NOISE IMMUNITY, SHORT CIRCUIT REVERSE OUTPUT PROTECTION CHARACTERISATION
Matteo Uccelli
TDE1707 power switch I.P.S) especially dedicated proximity detectors. characteristics I.P.S. please refer data sheet AN485. Since device operates Industrial environment, very important good noise immunity. overload short circuit) output reverse connection hardiness also point device used this applications.
testing. This Evaluation section describes noise immunity results. reference, test been done comparison between TDE1707-B improved version previous (Old version). statements regarding burst immunity refer measurements done ESALI (European System Application Industrial). application laboratory provided with appropriate testing bench realised basing directives contained 801/4 normative. correlated instrumentation consists Thermo Voltek MASTER immunity test system surge burst generator. Tektronix TM502 current probe GOULD Data Ms/sec digital storage oscilloscope Laboratory Power Supply PS-2403 power supply behaviour device monitored with current probe load, which seems have less influence measurements. Anyway important attention because even when using current probe really easy couple additional noise, course result consists achievement lower immunity levels than right ones: fast transients should coupled only thanks capacitive coupling clamp. same reason caution mandatory regarding power supply: this should directly affected from burst generator Additional coupling becomes easier easier burst voltage increases: parasitic antennas becomes more efficient. Table 801/4, limiting values burst impulses
severity test voltage signal line 0.5kV 0.25kV
Testing configuration: 1707) 1707 Rev. silicon have been tested compared regarding fast transient burst immunity. This testing performed several layouts taking care operate same test conditions.
December 1999
input connected Vreg tanks kOhm resistor (R1), device supplying resistor (R2) cable load flat parallel wires,2 long cable. Tests were performed with power supply voltage varying between Capacitors were ceramic capacitors, ceramic no-smd capacitor (smd capacitor gives benefits). (C4) 100nF used while Vreg (C2) 10nF adopted, this tests. Figure Bench exemplification
Auxiliary Equipment Load Burst Generator
Signal supply lines Capacitive coupling clamp
Insulation Support Ground reference plan
Figure Application schematic
TDE1707
100nF
10nF
Typically burst exceeding tolerance level causes output transistor switch even input changed high state.
Figure Spurious transition output transistor burst pulse
1707 silicon value delay capacitor (C1) does influence immunity level device. device behaves exactly same whatever value capacitor. Without other capacitor than Vreg device shows immunity level +300 -800. immunity improve adopted capacitor output This capacitor same effect whenever connected between ground output output. With C3=1 immunity level +1400 -2500 C3=10 bring immunity level higher than +2500 /-2500. 1707 Rev. silicon placing delay capacitor (C1) results lowering fast transient immunity which anyway higher than acquired same conditions with silicon. fact without capacitor device working correctly even with +2500 -2500 burst voltage. This value strongly reduced when delay capacitor adopted: with immunity drops +600 -1500 same higher values 3.3nF Even with TDE1707 rev.B very useful filter output between ground output between output sufficient gain correct operating device with burst amplitude +2500 -2500. Layout: anyway must underlined importance layout gain highest levels immunity important provide accurate layout ground. Star connection recommended ground connections capacitors Vreg.
Figure Zoom Layout
Table Immunity levels silicon corresponding value
Cout (nF) capacitor 10nF TDE1707 -800 +300V -2500 +1400V >(-2500 +2500V) TDE1707 Rev. -1500 +600V >(-2500 +2500V) >(-2500 +2500V)
Short circuit reverse output connection behaviour: following evaluation refers 1707 rev. operating with supply voltage varying between pure resistive load (from ceramic capacitor Vreg 1707 cannot withstand short circuit condition without delay capacitor connected When device switched from cold state there zone corresponding which protection effect output transistor: goes output transistor does switch should. This zone becomes shorter shorter with rising temperature finally longer present: when device switched warm protection fully working. This period time which protection effect long enough have destroying effect device voltage supply higher than possible figure this behaviour Vcc, possible filter this effect directly Vreg least reasonable values electrolytic capacitors paralleled ceramic ones. just sufficient very small capacitor (68pF have longer this effect avoid problem.
Figure Short circuit protection failure turn capacitor device cold)
Figure Short circuit protection fully working (68pF device cold)
case reversal connection output (output device tied supply ground device ground load tested loads: from Ohm) required greater capacitor than pure short circuit case (220 order safely device. Table
Worst case: Minimal delay value: Short circuit 68pF Reverse output connection 220pF
Conclusions: Table well highlights improvement, terms noise immunity, actual silicon version. Moreover, using appropriate filters (this means: output capacitor, delay capacitor.), possible safely TDE1707 typical environment, results protected from possible injuries incidental wrong connections.
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 1999 STMicroelectronics Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. http://www.st.com
Other recent searches
RG214 - RG214 RG214 Datasheet
IDT74ALVCH16601 - IDT74ALVCH16601 IDT74ALVCH16601 Datasheet
EQC5001AC - EQC5001AC EQC5001AC Datasheet
CM206S - CM206S CM206S Datasheet
BDX37 - BDX37 BDX37 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
