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CHEMICAL MECHANICAL POLISHING (CMP)
PRODUCT DESCRIPTION (for qualification)
Information provided this document intended generic qualification technically describes Cypress part supplied: Marketing Part Device Description: Cypress Division: CY7C109/CY7C199 256K SRAM (CY7199) SRAM (CY7C109) Cypress Semiconductor Corporation REV. (CY7C199) REV. (CY7C109) 7C199A 7C109 Oct/1994
Overall Mask) Level (pre-requisite qualification): Size (stepping): (CY7C199) (CY7C109)
What markings Die:
Cypress Qualification completion/Marketing Availability Dates (Current REV):
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number Metal Layers: Metal Composition: Metal 6000A with 1500TiW Barrier Metal: Ti/TiW, 500A/1200A Metal TiW,Al/Ti 1500A/10000A/150A None CMOS Double Poly, Double Metal 0.65 SiO2 Cypress Semiconductor Bloomington, Fab3/R25
Passivation Type Materials: Free Phosphorus contents glass layer(%): Coating(s), used: Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process Polyimide Generic Process Technology/Design Rule (µ-drawn):
TEOS Oxynitride
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CYPRESS SEMICONDUCTOR
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Assembly Line Process Copper (Olin 194) Solder Plated, 85%Sn, 15%Pb Silver Spot Paste Thermosonic Attach Dim: Attach Material: Wire Material/Size: Anam, Korea KOREA-A/S32 mils mils (CY7C199) mils mils (CY7C109) Silver Epoxy Gold 28-Lead (CY7C199) 32-Lead (CY7C109) mils side (CY7C199) mils side (CY7C109) Sumitomo EME-6300H(R)
Name/Location Assembly (prime) facility:
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CYPRESS SEMICONDUCTOR
OTHER INFORMATION
approval similarity, identify other devices using same basic with bonding metal mask options test selections explain:
Cypress planning changes near future, identify change (Qtr/Yr) Design Rev./Shrink: Fab/Assembly site change: Other Devices qualified this technology: Other Packages qualified this device: Voltage Rating (per STD-008, Method 3018): Flammability Classification (UL-94V): Alternate Fab/Assembly Locations: None Assembly >2,000V Process Change: Cross Licensee/Licensor:
Please attach following Qualification Reliability data revision Package type, assembly sites identified above (mark included): HAST (5.5V, 140°C, 85%RH, 15psig) Temperature Cycles (-65°C 150°C) Temperature Cycles (-40°C 165°C) Data Retention Bake, Plastic (165°C) Data Retention Bake, Hermetic (250°C) Autoclave (PCT, 121°C, 100%RH) Operating Life (temp): Steady State Life (HTSSL, 5.75V, 150°C) Temperature Humidity Bias (5.5V, 85°C, 85%RH) Latchup Testing Tests (MIL-STD 883, method 3015) Other: JESD22-A112 Moisture Sensitivity Level 150°C
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CYPRESS SEMICONDUCTOR
Marketing Part: Description:
CY7C199/CY7C109 28-Lead (CY7C199) 32-Lead (CY7C109)
DEVICE RELIABILITY SUMMARY
Wafer Fab: Assembly:
Bloomington, Anam-Seoul, Korea Omedata, Indonesia
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Early Failure Rate Device CY7C109-VC CY7C199-VC Assy Lot# 349412320 349410144 3432982 3429771 Hours 0/362 0/351 Cumulative 0/713
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Latent Failure Rate Device CY7C109-VC CY7C199-VC Assy Lot# 349412320 349410144 Lot# 3432982 3429771 Hours 0/120 0/120 Hours 0/120 0/120 Cumulative 0/240
Temperature Cycle (Condition -65°C 150°C), Precondition Hrs. Pressure Cooker Test Device CY7C199-VC Assy Lot# 349410144 Lot# 3429771 Cycles 0/53 1000 Cycles 0/53 1000 Cycles Cumulative 0/53
Temperature Cycle (Condition -65°C 150°C) with Dry-baked Device CY7C109-VC Assy Lot# 349412320 Lot# 3432982 Cycles 0/95 1000 Cycles 0/95 1000 Cycles Cumulative 0/95
Autoclave (PCT, bias, 121°C, 100%RH, 15psig), Precondition Temperature Cycle Device CY7C109-VC CY7C199-VC Assy Lot# 349412320 349410144 Lot# 3432982 3429771 Hours 0/46 0/54 Cumulative 0/100
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CYPRESS SEMICONDUCTOR
Marketing Part: Description:
DEVICE RELIABILITY SUMMARY CY7C199/CY7C109 Wafer Fab: 28-Lead (CY7C199) Assembly: 32-Lead (CY7C109)
Bloomington, Anam-Seoul, Korea Omedata, Indonesia
High Accelerated Saturation Test (HAST, 5.5V, 140°C, 85%RH, 15psig), Precondition Hrs. (121°C, 100% Device CY7C109-VC CY7C199-VC Assy Lot# 349412320 349410144 Lot# 3432982 3429771 Hours 0/46 0/52 Miscellaneous Results JESD22-A112 Moisture Sensitivity Level Cumulative 0/98

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