BF1107; BF1107W N-channel single gate MOS-FETs Product specificat

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

BF1107; BF1107W N-channel single gate MOS-FETs Product specificat

Datasheet Thumbnail

Top Searches for this datasheet

BF1107; BF1107W N-channel single gate MOS-FETs
Product specification Supersedes data 1998 1999
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
FEATURES Currentless switch. APPLICATIONS Various switching applications such Passive loop through tuner Transceiver switching. DESCRIPTION BF1107 BF1107W depletion type field-effect transistors SOT23 SOT323 packages respectively. loss high isolation capabilities this MOS-FET provide excellent switching functions. Integrated diodes between gate source between gate drain protect against excessive input voltage surges. Drain source interchangeable. PINNING DESCRIPTION BF1107 drain source gate drain source gate BF1107W
Marking code: Marking code: S3p.
handbook, halfpage
BF1107; BF1107W
MSB003
view
Fig.1 Simplified outline SOT23 (BF1107).
handbook, halfpage
view
MAM062
Fig.2 Simplified outline SOT323 (BF1107W).
QUICK REFERENCE DATA SYMBOL S21(on)2 S21(off)2 RDSon VGSoff PARAMETER losses (on-state) isolation (off-state) drain-source on-resistance pinch-off voltage CAUTION This product supplied anti-static packing prevent damage caused electrostatic discharge during transport handling. further information, refer Philips specs.: SNW-EQ-608, SNW-FQ-302A SNW-FQ-302B. CONDITIONS MIN. TYP. MAX. -4.5 UNIT
1999
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Tstg drain-source voltage source-drain voltage drain-gate voltage source-gate voltage drain current storage temperature junction temperature PARAMETER
BF1107; BF1107W
MIN.
MAX.
UNIT
+150
THERMAL CHARACTERISTICS SYMBOL Note Soldering point gate lead. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)GSS VGSoff IDSX IGSS PARAMETER gate-source breakdown voltage gate-source pinch-off voltage drain-source leakage current gate cut-off current CONDITIONS MIN. TYP. MAX. -4.5 UNIT PARAMETER thermal resistance from junction soldering point; note VALUE UNIT
DYNAMIC CHARACTERISTICS Common gate; Tamb 25°C. SYMBOL S21(on)2 PARAMETER losses (on-state) CONDITIONS S21(off)2 isolation (off-state) RDSon drain-source on-resistance input capacitance output capacitance 1999 MIN. TYP. MAX. UNIT
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
handbook, halfpage
MBK831
21(on) (dB)
handbook, halfpage
MBK832
21(off) (dB)
(MHz)
(MHz)
Fig.3
Losses (on-state) function frequency; typical values.
Fig.4
Isolation (off-state) function frequency; typical values.
handbook, halfpage
MBK833
(dB)
(MHz)
Fig.5
Input output return losses (on-state) function frequency; typical values.
1999
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
PACKAGE OUTLINES Plastic surface mounted package; leads
BF1107; BF1107W
SOT23
detail
scale
DIMENSIONS original dimensions) UNIT max. 0.48 0.38 0.15 0.09 0.95 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT23
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
Plastic surface mounted package; leads
SOT323
detail
scale
DIMENSIONS original dimensions) UNIT 0.25 0.10 1.35 1.15 0.65 0.45 0.15 0.23 0.13
OUTLINE VERSION SOT323
REFERENCES JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BF1107; BF1107W
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1999
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 9805 4455, Fax. 9805 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 1248, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 0733, Fax. +375 0773 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 9211, Fax. +359 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381, Fax. 0087 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Sydhavnsgade 1780 COPENHAGEN Tel. 3333, Fax. 3905 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 800, Fax. +358 6158 0920 France: Carnot, BP317, 92156 SURESNES Cedex, Tel. 4099 6161, Fax. 4099 6427 Germany: D-20097 HAMBURG, Tel. 2353 Fax. 2353 6300 Hungary: Austria India: Philips INDIA Ltd, Band Building, floor, 254-D, Annie Besant Road, Worli, MUMBAI 025, Tel. 8541, Fax. 0966 Indonesia: Philips Development Corporation, Semiconductors Division, Gedung Philips, Buncit Raya Kav.99-100, JAKARTA 12510, Tel. 0040 ext. 2501, Fax. 0080 Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki 18053, AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 2531, Fax. 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381, +9-5 0087 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Pakistan: Singapore Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 6918, Fax. 6919 Singapore: Lorong Payoh, SINGAPORE 319762, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 58088 Newville 2114, Tel. 5401, Fax. 5398 South America: Vicente Pinzon, 173, floor, 04547-130 PAULO, Brazil, Tel. 2333, Fax. 2382 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 5985 2000, Fax. 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2741 Fax. 3263 Taiwan: Philips Semiconductors, Chien Rd., Sec. TAIPEI, Taiwan Tel. +886 2134 2886, Fax. +886 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. 81260 Umraniye, ISTANBUL, Tel. 1500, Fax. 1813 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381, Fax. 0087 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 5344, Fax.+381 5777
other countries apply Philips Semiconductors, International Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1999
Internet:
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
125004/00/03/pp8
Date release: 1999
Document order number:
9397 05776

BF1107; BF1107W N-channel single gate MOS-FETs Product specificat

Top Searches for this datasheet

Other recent searches