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BF861A; BF861B; BF861C N-channel junction FETs Product specificat


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BF861A; BF861B; BF861C N-channel junction FETs
Product specification Supersedes data 1995 File under Discrete Semiconductors, SC07 1997
Philips Semiconductors
Product specification
N-channel junction FETs
FEATURES High transfer admittance input capacitance feedback capacitance noise. APPLICATIONS Preamplifiers tuners radios. DESCRIPTION N-channel symmetrical junction field effect transistors SOT23 package. PINNING SOT23 SYMBOL drain gate DESCRIPTION source
BF861A; BF861B; BF861C
handbook, halfpage
view
MAM036
Marking codes: BF861A: M33. BF861B: M34. BF861C: M35.
Fig.1 Simplified outline symbol.
CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
QUICK REFERENCE DATA SYMBOL IDSS PARAMETER drain-source voltage (DC) drain current BF861A BF861B BF861C Ptot total power dissipation forward transfer admittance BF861A BF861B BF861C Ciss Crss input capacitance reverse transfer capacitance Tamb CONDITIONS MIN. MAX. UNIT
1997
Philips Semiconductors
Product specification
N-channel junction FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VGSO VDGO Ptot Tstg Note Device mounted printed-circuit board. PARAMETER drain-source voltage (DC) gate-source voltage drain-gate voltage (DC) forward gate current (DC) total power dissipation storage temperature operating junction temperature open drain open source
BF861A; BF861B; BF861C
CONDITIONS Tamb note
MIN.
MAX. +150
UNIT
(mW)
MRC166
Tamb
Fig.2 Power derating curve.
1997
Philips Semiconductors
Product specification
N-channel junction FETs
THERMAL CHARACTERISTICS SYMBOL Note Device mounted printed-circuit board. CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source cut-off voltage BF861A BF861B BF861C VGSS IDSS gate-source forward voltage drain current BF861A BF861B BF861C IGSS gate cut-off current forward transfer admittance BF861A BF861B BF861C common source output conductance BF861A BF861B BF861C Ciss Crss Vn/B input capacitance reverse transfer capacitance equivalent input noise voltage CONDITIONS PARAMETER thermal resistance from junction ambient; note
BF861A; BF861B; BF861C
VALUE
UNIT
MIN. -0.2 -0.5 -0.8
TYP.
MAX.
UNIT
gate-source breakdown voltage
-1.5
nV/Hz
1997
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
(mA)
MBD461
handbook, halfpage
MBD462
(µS)
GSoff
(mA)
Fig.3
Drain current function gate-source cut-off voltage; typical values.
Fig.4
Common-source output conductance function drain current; typical values.
handbook, halfpage
MBD463
MBD464
handbook, halfpage
(mS)
(mS)
BF861C BF861B
BF861A
(mA)
(mA)
Fig.5
Forward transfer admittance function drain current; typical values.
Fig.6
Forward transfer admittance function drain current; typical values.
1997
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD465
MBD466
handbook, halfpage
(mA)
handbook, halfpage
(mA)
BF861A
BF861A
Fig.7 Typical input characteristics.
Fig.8 Typical output characteristics.
MBD467
MBD468
handbook, halfpage
(mA)
handbook, halfpage
(mA)
BF861B
BF861B
Fig.9 Typical input characteristics.
Fig.10 Typical output characteristics.
1997
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD469
MBD470
handbook, halfpage
(mA)
handbook, halfpage
(mA)
BF861C
BF861C
Fig.11 Typical input characteristics.
Fig.12 Typical output characteristics.
handbook, halfpage
MBD471
(pF)
handbook, halfpage (nA)
MBD472
MHz.
Fig.13 Input reverse transfer capacitance functions gate-source voltage; typical values.
Fig.14 Gate current function drain-gate voltage; typical values.
1997
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
handbook, halfpage
MBD473
is,b (mS)
MBD474
(nV/
(kHz)
(MHz)
Tamb
Fig.15 Equivalent input noise function frequency; typical values.
Fig.16 Common-source input admittance; typical values.
handbook, halfpage grs,b (mS)
MBD475
handbook, halfpage
MBD476
(mS)
(MHz)
(MHz)
Tamb
Tamb
Fig.17 Common-source reverse admittance; typical values.
Fig.18 Common-source forward transfer admittance; typical values.
1997
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
os,bos (mS)
MBD477
(MHz)
Tamb
Fig.19 Common-source output admittance; typical values.
1997
Philips Semiconductors
Product specification
N-channel junction FETs
PACKAGE OUTLINE
BF861A; BF861B; BF861C
handbook, full pagewidth
0.150 0.090 0.95 0.48 0.38 VIEW
0.55 0.45
MBC846
Dimensions
Fig.20 SOT23.
1997
Philips Semiconductors
Product specification
N-channel junction FETs
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF861A; BF861B; BF861C
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1997
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 9805 4455, Fax. 9805 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 1010, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 733, Fax. +375 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 211, Fax. +359 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Prags Boulevard 1919, DK-2300 COPENHAGEN Tel. 2636, Fax. 0044 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 615800, Fax. +358 61580920 France: Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. 6161, Fax. 6427 Germany: D-20097 HAMBURG, Tel. Fax. Greece: 25th March Street, 17778 TAVROS/ATHENS, Tel. 4894 339/239, Fax. 4814 Hungary: Austria India: Philips INDIA Ltd, Band Building, floor, 254-D, Annie Besant Road, Worli, MUMBAI 025, Tel. 8541, Fax. 0966 Indonesia: Singapore Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki 18053, AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 6752 2531, Fax. 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 6918, Fax. 6919 Singapore: Lorong Payoh, SINGAPORE 1231, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 7430 Johannesburg 2000, Tel. 5911, Fax. 5494 South America: Rocio 220, floor, Suite 04552-903 Paulo, PAULO Brazil, Tel. 2333, Fax. 1849 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 2000, Fax. 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2686, Fax. 7730 Taiwan: Philips Semiconductors, Chien Rd., Sec. TAIPEI, Taiwan Tel. +886 2134 2865, Fax. +886 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Talatpasa Cad. 80640 Tel. 2770, Fax. 6707 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 344, Fax.+381
other countries apply Philips Semiconductors, Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1997
Internet:
SCA55
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
117067/00/03/pp12
Date release: 1997
Document order number:
9397 02667

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