BF556A; BF556B; BF556C N-channel silicon junction field-effect transis

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BF556A; BF556B; BF556C N-channel silicon junction field-effect transis

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BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors
Product specification Supersedes data April 1995 File under Discrete Semiconductors, SC07 1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
FEATURES leakage level (typ. High gain cut-off voltage.
BF556A; BF556B; BF556C
handbook, halfpage
APPLICATIONS Impedance converters e.g. electret microphones infra-red detectors amplifiers oscillators mixers. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors SOT23 package. PINNING SOT23 SYMBOL drain gate` DESCRIPTION source CAUTION
view
MAM036
Marking codes: BF556A: M84. BF556B: M85. BF556C: M86.
Fig.1 Simplified outline symbol.
device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
QUICK REFERENCE DATA SYMBOL VGSoff IDSS PARAMETER drain-source voltage (DC) gate-source cut-off voltage drain current BF556A BF556B BF556C Ptot total power dissipation forward transfer admittance Tamb CONDITIONS -0.5 MIN. MAX. -7.5 UNIT
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VGSO VGDO Ptot Tstg Note PARAMETER drain-source voltage (DC) gate-source voltage gate-drain voltage (DC) forward gate current (DC) total power dissipation storage temperature operating junction temperature Tamb note open drain open source CONDITIONS
BF556A; BF556B; BF556C
MIN.
MAX.
UNIT
Device mounted printed-circuit board, maximum lead length mounting drain lead mm2. THERMAL CHARACTERISTICS SYMBOL Note Device mounted printed-circuit board, maximum lead length mounting drain lead mm2. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)GSS VGSoff IDSS PARAMETER gate-source cut-off voltage drain current BF556A BF556B BF556C IGSS gate leakage current forward transfer admittance common source output admittance CONDITIONS -0.5 -5000 MIN. -0.5 TYP. -7.5 MAX. UNIT gate-source breakdown voltage PARAMETER thermal resistance from junction ambient; note VALUE UNIT
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
DYNAMIC CHARACTERISTICS Tamb unless otherwise specified. SYMBOL PARAMETER input capacitance reverse transfer capacitance common source input conductance common source transfer conductance common source reverse conductance common source output conductance equivalent input noise voltage
BF556A; BF556B; BF556C
CONDITIONS
TYP.
UNIT nV/Hz
MRC154
MRC156
handbook, halfpage
handbook, halfpage
IDSS (mA)
(mS)
VGSoff
VGSoff
Fig.3 Fig.2 Drain current function gate-source cut-off voltage; typical values.
Forward transfer admittance function gate-source cut-off voltage; typical values.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
BF556A; BF556B; BF556C
handbook, halfpage
MRC153
handbook, halfpage
MRC155
(µS)
RDSon
VGSoff
VGSoff
Fig.4
Common-source output conductance function gate-source cut-off voltage; typical values.
Fig.5
Drain-source on-state resistance function gate-source cut-off voltage; typical values.
handbook, halfpage
MRC145
(mA)
handbook, halfpage
MRC146
(mA)
-0.5
-0.5
-1.0 -1.5
-2.0 -2.5
Fig.6 Typical output characteristics; BF556A.
Fig.7 Typical output characteristics; BF556B.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
BF556A; BF556B; BF556C
handbook, halfpage
MRC147
(mA)
handbook, halfpage
MRC148
(mA) BF556C
BF556B
BF556A
Fig.8 Typical output characteristics; BF556C.
Fig.9 Typical input characteristics.
handbook, halfpage (µA)
MRC149
-102 handbook, halfpage (pA)
MRC151
BF556C
BF556B
BF556A
10-1
IGSS -10-1
10-2 10-3
-10-2
only BF556B BF556C.
Fig.10 Drain current function gate-source voltage; typical values.
Fig.11 Gate current function drain-gate voltage; typical values.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
BF556A; BF556B; BF556C
handbook, halfpage IGSS (pA)
MRC150
(mW)
MRC166
10-1
(°C)
Tamb
Fig.12 Gate current function junction temperature; typical values.
Fig.13 Power derating curve.
MRC134
handbook, halfpage (pF)
handbook, halfpage
MRC140
(pF)
Fig.14 Reverse transfer capacitance; typical values.
Fig.15 Input capacitance; typical values.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
BF556A; BF556B; BF556C
handbook, halfpage gis, (mS)
MRC142
handbook, halfpage
MRC141
gfs, -bfs (mS)
-bfs
10-1
10-2
(MHz)
10-1
(MHz)
Tamb
Tamb
Fig.16 Common-source input admittance; typical values.
Fig.17 Common-source transfer admittance; typical values.
handbook, halfpage
MRC144
MRC143
handbook, halfpage
brs, (mS)
bos, (mS)
-10-1 10-1
-10-2
-10-3
10-2 (MHz) (MHz)
Tamb
Tamb
Fig.18 Common-source reverse admittance; typical values.
Fig.19 Common-source output admittance; typical values.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
BF556A; BF556B; BF556C
handbook, halfpage
MRC278
(Hz)
Fig.20 Equivalent noise voltage function frequency.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
PACKAGE OUTLINE
BF556A; BF556B; BF556C
handbook, full pagewidth
0.150 0.090 0.95 0.48 0.38 VIEW
0.55 0.45
MBC846
Dimensions
Fig.21 SOT23.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF556A; BF556B; BF556C
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1996

BF556A; BF556B; BF556C N-channel silicon junction field-effect transis

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