BF545A; BF545B; BF545C N-channel silicon junction field-effect transis

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BF545A; BF545B; BF545C N-channel silicon junction field-effect transis

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BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors
Product specification Supersedes data April 1995 File under Discrete Semiconductors, SC07 1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
FEATURES leakage level (typ. High gain cut-off voltage (max. BF545A). APPLICATIONS Impedance converters e.g. electret microphones infra-red detectors amplifiers oscillators mixers. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors SOT23 package. PINNING SOT23 SYMBOL DESCRIPTION source drain gate
handbook, halfpage
BF545A; BF545B; BF545C
view
MAM036
Marking codes: BF545A: M65. BF545B: M66. BF545C: M67.
Fig.1 Simplified outline symbol.
QUICK REFERENCE DATA SYMBOL VGSoff IDSS PARAMETER drain-source voltage gate-source cut-off voltage drain current BF545A BF545B BF545C Ptot total power dissipation forward transfer admittance Tamb CONDITIONS -0.4 MIN. MAX. -7.8 UNIT
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VGSO VGDO Ptot Tstg Note PARAMETER drain-source voltage gate-source voltage gate-drain voltage (DC) forward gate current (DC) total power dissipation storage temperature operating junction temperature Tamb note open drain open source CONDITIONS
BF545A; BF545B; BF545C
MIN.
MAX.
UNIT
Device mounted printed-circuit board, maximum lead length mounting drain lead mm2.
handbook, halfpage
MBB688
Ptot (mW)
Tamb (°C)
Fig.2 Power derating curve.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
THERMAL CHARACTERISTICS SYMBOL Note PARAMETER thermal resistance from junction ambient; note
BF545A; BF545B; BF545C
VALUE
UNIT
Device mounted printed-circuit board, maximum lead length mounting drain lead mm2. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source cut-off voltage BF545A BF545B BF545C IDSS drain current BF545A BF545B BF545C IGSS gate leakage current forward transfer admittance common source output admittance -0.5 -1000 -100 CONDITIONS -0.4 -1.6 -3.2 -0.4 -2.2 -3.8 -7.8 -7.5 MIN. TYP. MAX. UNIT gate-source breakdown voltage
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
DYNAMIC CHARACTERISTICS Tamb unless otherwise specified. SYMBOL PARAMETER input capacitance reverse transfer capacitance
BF545A; BF545B; BF545C
CONDITIONS
TYP.
UNIT
common source input conductance common source transfer conductance common source reverse conductance common source output conductance
handbook, halfpage
MBB467
handbook, halfpage
MBB466
IDSS (mA)
(mS)
VGSoff
VGSoff
Fig.4 Fig.3 Drain current function gate-source cut-off voltage; typical values.
Forward transfer admittance function gate-source cut-off voltage; typical values.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
BF545A; BF545B; BF545C
handbook, halfpage
MBB465
handbook, halfpage
MBB464
(µS)
RDSon
VGSoff
VGSoff
Fig.5
Common-source output admittance function gate-source cut-off voltage; typical values.
Fig.6
Drain-source on-resistance function gate-source cut-off voltage; typical values.
handbook, halfpage
MBB462
handbook, halfpage
MBB463
(mA)
(mA)
-0.5 -1.0
Fig.7 Typical output characteristics; BF545A.
Fig.8 Typical input characteristics; BF545A.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
BF545A; BF545B; BF545C
handbook, halfpage
MBB460
handbook, halfpage
MBB459
(mA)
-0.5 -1.5
(mA)
-2.5
Fig.9 Typical output characteristics; BF545B.
Fig.10 Typical input characteristics; BF545B.
handbook, halfpage
MBB457
handbook, halfpage
MBB456
(mA)
(mA)
Fig.11 Typical output characteristics; BF545C.
Fig.12 Typical input characteristics; BF545C.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
BF545A; BF545B; BF545C
handbook, halfpage (µA)
MBB461
handbook, halfpage (µA)
MBB458
10-1 10-2 10-3
10-1 10-2 10-3
Fig.13 Drain current function gate-source voltage; typical values BF545A.
Fig.14 Drain current function gate-source voltage; typical values BF545B.
handbook, halfpage (µA)
MBB455
-102 handbook, halfpage (pA)
MBB454
IGSS 10-1 -10-1 10-2 10-3 -10-2
only BF545B BF545C;
Fig.15 Drain current function gate-source voltage; typical values BF545C.
Fig.16 Gate current function drain-gate voltage; typical values.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
BF545A; BF545B; BF545C
-103 handbook, halfpage IGSS (pA) -102
MBB453
handbook, halfpage
MBB452
(pF)
-10-1
(°C)
Fig.17 Gate current function junction temperature; typical values.
Fig.18 Reverse transfer capacitance function gate-source voltage; typical values.
handbook, halfpage
MBB451
handbook, halfpage (mS)
MBB468
(pF)
10-1
10-2
(MHz)
Tamb
Fig.19 Typical input capacitance.
Fig.20 Common-source input admittance; typical values.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
BF545A; BF545B; BF545C
handbook, halfpage (mS)
MBB469
handbook, halfpage
MBB470
(mS) -brs
10-1 10-2 -grs
(MHz)
10-3
(MHz)
Tamb
Tamb
Fig.21 Common-source forward transfer admittance; typical values.
Fig.22 Common-source reverse transfer admittance; typical values.
handbook, halfpage
MBB471
(mS)
10-1
10-2
(MHz)
Tamb
Fig.23 Common-source output admittance; typical values.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
PACKAGE OUTLINE
BF545A; BF545B; BF545C
handbook, full pagewidth
0.150 0.090 0.95 0.48 0.38 VIEW
0.55 0.45
MBC846
Dimensions
Fig.24 SOT23.
1996
Philips Semiconductors
Product specification
N-channel silicon junction field-effect transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF545A; BF545B; BF545C
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1996

BF545A; BF545B; BF545C N-channel silicon junction field-effect transis

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