BF510 N-channel silicon field-effect transistors Product specific

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BF510 N-channel silicon field-effect transistors Product specific

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BF510 N-channel silicon field-effect transistors
Product specification File under Discrete Semiconductors, SC07 December 1997
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors miniature plastic envelope intended applications v.h.f. range hybrid thick thin-film circuits. Special features feedback capacitance noise figure. These features make product very suitable applications such r.f. stages f.m. portables (BF510), radios (BF511) mains radios (BF512) mixer stage (BF513). PINNING SOT23 gate drain source MARKING CODE BF510 BF511 BF512 BF513
BF510
handbook, halfpage
view
MAM385
Fig.1 Simplified outline symbol.
QUICK REFERENCE DATA Drain-source voltage Drain current average) Total power dissipation Tamb Drain current Transfer admittance (common source) Feedback capacitance Noise figure optimum source admittance typ. typ. typ. typ. IDSS Ptot max. BF510 max. max.
December 1997
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
RATINGS Limiting values accordance with Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage (open source) Drain current average) Gate current Total power dissipation Tamb (note Storage temperature range Junction temperature THERMAL RESISTANCE From junction ambient (note Note Mounted ceramic substrate STATIC CHARACTERISTICS Tamb BF510 Gate cut-off current -VGS Gate-drain breakdown voltage Drain current Gate-source cut-off voltage -V(P)GS typ. IDSS -V(BR)GDO -IGSS VDGO Ptot Tstg
BF510
max. max. max. max. max. max.
December 1997
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DYNAMIC CHARACTERISTICS Measuring conditions (common source): y-parameters (common source) Input capacitance Input conductance Feedback capacitance Transfer admittance instead Transfer admittance Output capacitance Output conductance Output conductance Noise figure optimum source admittance typ. typ. typ. typ. typ.
BF510
Tamb BF510 BF511 Tamb BF512 BF513 BF510
handbook, halfpage
MDA275
handbook, halfpage
(pF)
|yfs|
MDA276
BF513 BF512
(mS)
BF511
BF510
(mA)
Fig.2
BF510 BF511; BF512 BF513; MHz; Tamb
Fig.3
kHz; Tamb typical values.
December 1997
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510
handbook, halfpage
MDA245
Ptot (mW)
Tamb (°C)
Fig.4 Power derating curve.
December 1997
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
PACKAGE OUTLINE Plastic surface mounted package; leads
BF510
SOT23
detail
scale
DIMENSIONS original dimensions) UNIT max. 0.48 0.38 0.15 0.09 0.95 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT23
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
December 1997
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BF510
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications. data this specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
December 1997

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