BF245A; BF245B; BF245C N-channel silicon field-effect transistors
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BF245A; BF245B; BF245C N-channel silicon field-effect transistors
Product specification Supersedes data April 1995 File under Discrete Semiconductors, SC07 1996
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
FEATURES Interchangeability drain source connections Frequencies MHz. APPLICATIONS amplifiers. DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors plastic TO-92 variant package. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling. QUICK REFERENCE DATA SYMBOL VGSoff VGSO IDSS PARAMETER drain-source voltage gate-source cut-off voltage gate-source voltage drain current BF245A BF245B BF245C Ptot total power dissipation forward transfer admittance reverse transfer capacitance Tamb kHz; Tamb MHz; Tamb open drain CONDITIONS Fig.1 PINNING
BF245A; BF245B; BF245C
SYMBOL drain source gate
DESCRIPTION
handbook, halfpage
MAM257
Simplified outline (TO-92 variant) symbol.
MIN. -0.25
TYP.
MAX.
UNIT
1996
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VGDO VGSO Ptot Tstg Note PARAMETER drain-source voltage gate-drain voltage gate-source voltage drain current gate current total power dissipation storage temperature operating junction temperature Tamb open source open drain
BF245A; BF245B; BF245C
CONDITIONS Tamb note
MIN.
MAX. +150
UNIT
Device mounted printed-circuit board, minimum lead length mounting drain lead minimum THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction ambient thermal resistance from junction ambient STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source breakdown voltage gate-source cut-off voltage gate-source voltage BF245A BF245B BF245C IDSS drain current BF245A BF245B BF245C IGSS gate cut-off current Note Measured under pulse conditions: 0.02. note -0.5 CONDITIONS -0.4 -1.6 -3.2 -2.2 -3.8 -7.5 MIN. -0.25 -8.0 MAX. UNIT CONDITIONS free VALUE UNIT
1996
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DYNAMIC CHARACTERISTICS Common source; Tamb unless otherwise specified. SYMBOL fgfs PARAMETER input capacitance reverse transfer capacitance output capacitance input conductance output conductance forward transfer admittance reverse transfer admittance output admittance cut-off frequency noise figure CONDITIONS
BF245A; BF245B; BF245C
MIN.
TYP. MAX.
UNIT
value MHz; (common source); input tuned minimum noise
handbook, halfpage
MGE785
handbook, halfpage
MGE789
IGSS (nA)
(mA)
-10-1
-10-2
-10-3
(°C)
Fig.2
Gate leakage current function junction temperature; typical values.
Fig.3
Transfer characteristics BF245A; typical values.
1996
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
handbook, halfpage
MBH555
(mA)
handbook, halfpage
MGE787
(mA)
-0.5
-1.5
Fig.4
Output characteristics BF245A; typical values.
Fig.5
Transfer characteristics BF245B; typical values.
handbook, halfpage
MBH553
handbook, halfpage
MGE788
(mA)
(mA)
-0.5 -1.5 -2.5
Fig.6
Output characteristics BF245B; typical values.
Fig.7
Transfer characteristics BF245C; typical values.
1996
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
handbook, halfpage
MBH554
MGE775
handbook, halfpage
(mA)
(mA)
-0.5
-1.5
(°C)
Fig.8
Output characteristics BF245C; typical values.
Fig.9
Drain current function junction temperature; typical values BF245A.
MGE776
handbook, halfpage
handbook, halfpage
MGE779
(mA)
(mA)
(°C)
(°C)
Fig.10 Drain current function junction temperature; typical values BF245B.
Fig.11 Drain current function junction temperature; typical values BF245C.
1996
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
handbook, halfpage (µA/V)
MGE778
(mA/V)
handbook, halfpage (µA/V)
MGE780
(pF)
10-1
(MHz)
10-1
(MHz)
10-2
Tamb Tamb
Fig.12 Input admittance; typical values.
Fig.13 Common source reverse admittance function frequency; typical values.
handbook, halfpage gfs,
MGE782
handbook, halfpage (µA/V)
MGE783
(mA/V)
-bfs
(mA/V)
10-1
-bfs (MHz) 10-2
(MHz)
Tamb
Tamb
Fig.14 Common-source forward transfer admittance function frequency; typical values.
Fig.15 Common-source output admittance function frequency; typical values.
1996
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
handbook, halfpage
MGE777
MGE781
handbook, halfpage
(pF)
(pF)
MHz; Tamb
MHz; Tamb
Fig.16 Input capacitance function gate-source voltage; typical values.
Fig.17 Reverse transfer capacitance function gate-source voltage; typical values.
handbook, halfpage
MGE791
|yfs| (mA/V) BF245A BF245B BF245C
handbook, halfpage
MGE784
GSoff
BF245C BF245B BF245A IDSS (mA)
(mA)
kHz; Tamb
Fig.18 Forward transfer admittance function drain current; typical values.
Fig.19 Gate-source cut-off voltage function drain current; typical values.
1996
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
handbook, halfpage RDSon
MGE790
handbook, halfpage
MGE786
(dB)
BF245A BF245B BF245C
10-1
(MHz)
kHz; Tamb
Tamb Input tuned minimum noise.
Fig.20 Drain-source on-state resistance function gate-source voltage; typical values.
Fig.21 Noise figure function frequency; typical values.
1996
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
PACKAGE OUTLINE
BF245A; BF245B; BF245C
handbook, full pagewidth
0.40
2.54
12.7 0.48 0.40
0.66 0.56
MBC015
Dimensions Terminal dimensions within this zone uncontrolled.
Fig.22 TO-92 variant.
1996
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF245A; BF245B; BF245C
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1996
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