BF998WR N-channel dual-gate MOS-FET Product specification Superse

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

BF998WR N-channel dual-gate MOS-FET Product specification Superse

Datasheet Thumbnail

Top Searches for this datasheet

BF998WR N-channel dual-gate MOS-FET
Product specification Supersedes data 1995 File under Discrete Semiconductors, SC07 1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier GHz. APPLICATIONS applications with supply voltage, such television tuners professional communications equipment. DESCRIPTION Depletion type field-effect transistor plastic microminiature SOT343R package with source substrate interconnected. transistor protected against excessive input voltage surges integrated back-to-back diodes between gates source. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
Marking code:
BF998WR
PINNING SYMBOL source drain gate gate DESCRIPTION
view
MAM198
Fig.1 Simplified outline (SOT343R) symbol.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s drain current total power dissipation operating junction temperature forward transfer admittance input capacitance gate reverse transfer capacitance noise figure PARAMETER drain-source voltage CONDITIONS MIN. TYP. MAX. UNIT
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot Tstg Note Device mounted printed-circuit board. PARAMETER drain-source voltage drain current gate current gate current total power dissipation storage temperature operating junction temperature Tamb Fig.2; note CONDITIONS MIN.
BF998WR
MAX. +150 +150
UNIT
MLD154
handbook, halfpage
Ptot (mW)
Tamb
Fig.2 Power derating curve.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
THERMAL CHARACTERISTICS SYMBOL Notes Device mounted printed-circuit board. temperature soldering point source lead. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(P)G1-S V(P)G2-S IDSS IG1-SS IG2-SS PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage gate 1-source cut-off voltage gate 2-source cut-off voltage drain-source current gate cut-off current gate cut-off current CONDITIONS VG2-S IG1-S VG1-S IG2-S VG2-S VG1-S VG2-S VG1-S VG2-S VG1-S VG1-S VG2-S MIN. PARAMETER thermal resistance from junction ambient thermal resistance from junction soldering point CONDITIONS note note
BF998WR
VALUE
UNIT
MAX. -2.5
UNIT
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-s Cig2-s PARAMETER forward transfer admittance input capacitance gate input capacitance gate drain-source capacitance noise figure MHz; BSopt CONDITIONS pulsed; MIN. TYP. 1.05 MAX. UNIT
reverse transfer capacitance
MHz; BSopt
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF998WR
MGC471
MGC470
(mA)
(mA)
-0.1 -0.2
-0.3 -0.4 -0.5
Tamb
VG2-S Tamb
Fig.3 Transfer characteristics; typical values.
Fig.4 Output characteristics; typical values.
MGC472
MGC473
(mS)
(mS)
-1600 -1200 -800 -400 (mV)
(mA)
Tamb
Tamb
Fig.5
Drain current function gate voltage; typical values.
Fig.6
Forward transfer admittance function drain current; typical values.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF998WR
MGC474
MGC475
(mS)
(pF)
VG1-S VDS(V)
Tamb
VG2-S MHz; Tamb
Fig.7
Forward transfer admittance function gate voltage; typical values.
Fig.8
Output capacitance function drain-source voltage; typical values.
MGC476
MGC477
(pF)
(pF)
-2.4
-1.6
-0.8
VG1-S (mV) VG2-S
VG2-S MHz; Tamb
VG1-S MHz; Tamb
Fig.9
Gate input capacitance function gate 1-source voltage; typical values.
Fig.10 Gate input capacitance function gate 2-source voltage; typical values.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF998WR
MGC466
(mS)
(µS)
MGC467
(deg)
(MHz)
(MHz)
VG2-S Tamb
VG2-S Tamb
Fig.11 Input admittance function frequency; typical values.
Fig.12 Reverse transfer admittance phase function frequency; typical values.
MGC468
MGC469
(mS)
(mS)
(deg)
(MHz)
(MHz)
VG2-S Tamb
VG2-S Tamb
Fig.13 Forward transfer admittance phase function frequency; typical values.
Fig.14 Output admittance function frequency; typical values.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF998WR
VAGC input
input BB405 input
BB405
output
MGC481
turns copper wire, internal diameter turns copper wire, internal diameter Tapped approximately half turn from cold side, adjust adjusted
Fig.15 Gain control testcircuit MHz.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF998WR
VAGC
input
0.5-3.5 2-18 0.5-3.5
input
4-40
MGC480
turns copper wire, without spacing, internal diameter silvered copper wire, above ground plane. silvered copper wire, above ground plane.
Fig.16 Gain control test circuit MHz.
MGC479
MGC478
(dB)
(dB)
IDSS=
IDSS= VAGC(V)
VAGC(V)
MHz; Tamb
MHz; Tamb
Fig.17 Automatic gain control characteristics measured circuit Fig.15.
Fig.18 Automatic gain control characteristics measured circuit Fig.16.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
PACKAGE OUTLINE
BF998WR
handbook, full pagewidth
1.00
1.35 1.15
0.25 0.10
MSB367
Dimensions
Fig.19 SOT343R.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF998WR
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1997
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 9805 4455, Fax. 9805 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 1010, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 733, Fax. +375 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 211, Fax. +359 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Prags Boulevard 1919, DK-2300 COPENHAGEN Tel. 2636, Fax. 0044 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 615800, Fax. +358 61580920 France: Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. 6161, Fax. 6427 Germany: D-20097 HAMBURG, Tel. Fax. Greece: 25th March Street, 17778 TAVROS/ATHENS, Tel. 4894 339/239, Fax. 4814 Hungary: Austria India: Philips INDIA Ltd, Band Building, floor, 254-D, Annie Besant Road, Worli, MUMBAI 025, Tel. 8541, Fax. 0966 Indonesia: Singapore Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki 18053, AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 6752 2531, Fax. 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 6918, Fax. 6919 Singapore: Lorong Payoh, SINGAPORE 1231, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 7430 Johannesburg 2000, Tel. 5911, Fax. 5494 South America: Rocio 220, floor, Suite 04552-903 Paulo, PAULO Brazil, Tel. 2333, Fax. 1849 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 2000, Fax. 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2686, Fax. 7730 Taiwan: Philips Semiconductors, Chien Rd., Sec. TAIPEI, Taiwan Tel. +886 2134 2865, Fax. +886 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Talatpasa Cad. 80640 Tel. 2770, Fax. 6707 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 344, Fax.+381
other countries apply Philips Semiconductors, Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1997
Internet:
SCA55
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
117067/00/02/pp12
Date release: 1997
Document order number:
9397 02671

BF998WR N-channel dual-gate MOS-FET Product specification Superse

Top Searches for this datasheet

Other recent searches