BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specif

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BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specif

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BF998; BF998R Silicon N-channel dual-gate MOS-FETs
Product specification Supersedes data April 1991 File under Discrete Semiconductors, SC07 1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
FEATURES Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier GHz. APPLICATIONS applications with supply voltage, such television tuners professional communications equipment.
view
handbook, halfpage
BF998; BF998R
MAM039
DESCRIPTION Depletion type field effect transistor plastic microminiature SOT143 SOT143R package with source substrate interconnected. transistors protected against excessive input voltage surges integrated back-to-back diodes between gates source. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
Marking code: MOp.
Fig.1
Simplified outline (SOT143) symbol; BF998.
handbook, halfpage
PINNING SYMBOL source drain gate gate DESCRIPTION
view
MAM040
Marking code: MOp.
Fig.2
Simplified outline (SOT143R) symbol; BF998R.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s drain current total power dissipation forward transfer admittance input capacitance gate reverse transfer capacitance noise figure operating junction temperature PARAMETER drain-source voltage CONDITIONS TYP. MAX. UNIT
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL ±IG1 ±IG2 Ptot Ptot Tstg Notes Device mounted ceramic substrate, Device mounted printed-circuit board. PARAMETER drain-source voltage drain current gate current gate current total power dissipation; BF998 Tamb Fig.3; note Tamb Fig.3; note total power dissipation; BF998R Tamb Fig.4; note storage temperature operating junction temperature CONDITIONS
BF998; BF998R
MIN.
MAX. +150
UNIT
MLA198
MGA002
handbook, halfpage
handbook, halfpage
Ptot (mW)
Ptot (mW)
Tamb
Tamb (°C)
Ceramic substrate. Printed-circuit board.
Fig.3 Power derating curves; BF998.
Fig.4 Power derating curve; BF998R.
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
THERMAL CHARACTERISTICS SYMBOL Notes Device mounted ceramic substrate, Device mounted printed-circuit board. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL PARAMETER CONDITIONS VG2-S IG1-SS VG1-S IG2-SS VG2-S VG1-S PARAMETER thermal resistance from junction ambient free air; BF998
BF998; BF998R
CONDITIONS note note
VALUE
UNIT
thermal resistance from junction ambient free air; BF998R note
MIN.
MAX.
UNIT
±V(BR)G1-SS gate 1-source breakdown voltage ±V(BR)G2-SS gate 2-source breakdown voltage -V(P)G1-S -V(P)G2-S IDSS ±IG1-SS ±IG2-SS Note Measured under pulse condition. gate 1-source cut-off voltage gate 2-source cut-off voltage drain-source current gate cut-off current gate cut-off current
VG2-S VG1-S note VG2-S VG1-S VG1-S VG2-S
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S SYMBOL Cig1-s Cig2-s PARAMETER forward transfer admittance input capacitance gate input capacitance gate output capacitance reverse transfer capacitance noise figure MHz; BSopt MHz; BSopt CONDITIONS MIN. TYP. 1.05 MAX. UNIT
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
handbook, halfpage
MGE813
(mA)
handbook, halfpage
MGE815
VG1-S
(mA)
VG2-S
-0.1 -0.2
-0.3 -0.4 -0.5
VG2-S Tamb
Tamb
Fig.5 Output characteristics; typical values.
Fig.6 Transfer characteristics; typical values.
handbook, halfpage
MGE814
MGE811
(mA)
handbook, halfpage
|yfs| (mS)
VG2-S (mA)
-1600
-1200
-800
-400
(mV)
VG2-S Tamb
Tamb
Fig.7
Drain current function gate voltage; typical values.
Fig.8
Forward transfer admittance function drain current; typical values.
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
MGE812
MGE810
handbook, halfpage
|yfs| (mS)
VG2-S
handbook, halfpage
(pF)
Tamb
VG2-S MHz; Tamb
Fig.9
Forward transfer admittance function gate voltage; typical values.
Fig.10 Output capacitance function drain-source voltage; typical values.
handbook, halfpage
MGE809
MBH479
handbook, halfpage
(pF)
(pF)
-2.4
-1.6
-0.8
VG1-S
VG2-S
VG2-S MHz; Tamb
VG1-S MHz; Tamb
Fig.11 Gate input capacitance function gate 1-source voltage; typical values.
Fig.12 Gate input capacitance function gate 2-source voltage; typical values.
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
MGC466
(mS)
(µS)
MGC467
(deg)
(MHz)
(MHz)
VG2-S Tamb
VG2-S Tamb
Fig.13 Input admittance function frequency; typical values.
Fig.14 Reverse transfer admittance phase function frequency; typical values.
MGC468
MGC469
(mS)
(mS)
(deg)
(MHz)
(MHz)
VG2-S Tamb
VG2-S Tamb
Fig.15 Forward transfer admittance phase function frequency; typical values.
Fig.16 Output admittance function frequency; typical values.
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
handbook, full pagewidth
Vagc input BB405 BB405
output
Vtun input
Vtun output
MGE802
turns copper wire, internal diameter turns copper wire, internal diameter Tapped approximately half turn from cold side, adjust adjusted
Fig.17 Gain control test circuit MHz.
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
handbook, full pagewidth
Vagc
input output
MGE801
turns copper wire, without spacing, internal diameter silvered copper wire, above ground plane. silvered copper wire, above ground plane.
Fig.18 Gain control test circuit MHz.
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
MGE808
MGE807
handbook, halfpage
(dB)
handbook, halfpage
(dB)
IDSS
IDSS Vagc
Vagc
MHz; Tamb
MHz; Tamb
Fig.19 Automatic gain control characteristics measured circuit Fig.17.
Fig.20 Automatic gain control characteristics measured circuit Fig.18.
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
PACKAGE OUTLINES
BF998; BF998R
handbook, full pagewidth
0.75 0.60
0.150 0.090
0.88
0.48
MBC845
VIEW
Dimensions
Fig.21 SOT143.
handbook, full pagewidth
0.40 0.25
0.150 0.090
0.48 0.38
0.88 0.78
MBC844
VIEW
Dimensions
Fig.22 SOT143R.
1996
Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF998; BF998R
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1996

BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specif

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