BF909WR N-channel dual-gate MOS-FET Product specification Superse

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BF909WR N-channel dual-gate MOS-FET Product specification Superse

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BF909WR N-channel dual-gate MOS-FET
Product specification Supersedes data 1995 File under Discrete Semiconductors, SC07 1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
FEATURES Specially designed supply voltage Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier Superior cross-modulation performance during AGC. APPLICATIONS applications with supply voltage such television tuners professional communications equipment. DESCRIPTION Enhancement type field-effect transistor plastic microminiature SOT343R package. transistor consists amplifier MOS-FET with source substrate interconnected internal bias circuit ensure good cross-modulation performance during AGC. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling. QUICK REFERENCE DATA SYMBOL Ptot Cig1-s drain current total power dissipation operating junction temperature forward transfer admittance input capacitance gate reverse transfer capacitance noise figure PARAMETER drain-source voltage CONDITIONS MIN. TYP.
Marking code:
handbook, halfpage
BF909WR
PINNING SYMBOL source drain gate gate DESCRIPTION
view
MAM192
Fig.1 Simplified outline (SOT343R) symbol.
MAX.
UNIT
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot Tstg Note Device mounted printed-circuit board. PARAMETER drain-source voltage drain current gate current gate current total power dissipation storage temperature range operating junction temperature Tamb Fig.2; note CONDITIONS MIN.
BF909WR
MAX.
UNIT
+150 +150
MLD150
handbook, halfpage
Ptot (mW)
Tamb
Fig.2 Power derating curve.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
THERMAL CHARACTERISTICS SYMBOL Notes Device mounted printed-circuit board. temperature soldering point source lead. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(F)S-G1 V(F)S-G2 VG1-S(th) VG2-S(th) IDSX IG1-SS IG2-SS Note connects gate DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-s Cig2-s PARAMETER forward transfer admittance input capacitance gate input capacitance gate drain-source capacitance noise figure MHz; GSopt; BSopt CONDITIONS pulsed; MIN. TYP. PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage forward source-gate voltage forward source-gate voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current gate cut-off current gate cut-off current CONDITIONS VG2-S IG1-S VG1-S IG2-S VG2-S IS-G1 VG1-S IS-G2 VG2-S VG1-S VG2-S note VG2-S VG1-S VG1-S VG2-S MIN. PARAMETER thermal resistance from junction ambient thermal resistance from junction soldering point CONDITIONS note note
BF909WR
VALUE
UNIT
MAX.
UNIT
MAX.
UNIT
reverse transfer capacitance
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF909WR
MLB937
MLB936
handbook, halfpage
handbook, halfpage
Vunw (dBµV)
(mA)
gain reduction (dB)
MHz. funw MHz; Tamb
Fig.3
Unwanted voltage cross-modulation function gain reduction; typical values; Fig.17.
Fig.4 Transfer characteristics; typical values.
MLB938
handbook, halfpage
handbook, halfpage
MLB939
(mA)
(µA)
VG2-S
Fig.6 Fig.5 Output characteristics; typical values.
Gate current function gate voltage; typical values.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF909WR
MLB940
MLB941
handbook, halfpage
handbook, halfpage
(mS)
(mA)
(mA) (µA)
VG2-S
Fig.7
Forward transfer admittance function drain current; typical values.
Fig.8
Drain current function gate current; typical values.
handbook, halfpage
MLB942
MLB943
handbook, halfpage
(mA)
(mA)
VG2-S (connected VGG);
VG2-S connected VGG;
Fig.9
Drain current function gate supply voltage VGG); typical values; Fig.17.
Fig.10 Drain current function gate VGG) drain supply voltage; typical values; Fig.17.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF909WR
MLB944
handbook, halfpage
handbook, halfpage
MLB945
(mA)
(µA)
(connected VGG).
(connected VGG).
Fig.11 Drain current function gate voltage; typical values; Fig.17.
Fig.12 Gate current function gate voltage; typical values; Fig.17.
handbook, halfpage (mS)
MLB946
(µS)
MLB947
(deg)
(MHz)
(MHz)
Tamb
Tamb
Fig.13 Input admittance function frequency; typical values.
Fig.14 Reverse transfer admittance phase function frequency; typical values.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF909WR
MLB948
MLB949
handbook, halfpage
(mS)
(deg)
(mS)
(MHz)
(MHz)
Tamb
Tamb
Fig.15 Forward transfer admittance phase function frequency; typical values.
Fig.16 Output admittance function frequency; typical values.
VAGC
MLD151
Fig.17 Cross-modulation test set-up.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
Table (MHz) 1000 Table Scattering parameters: VG2-S Tamb MAGNITUDE (ratio) 0.985 0.978 0.957 0.931 0.899 0.868 0.848 0.816 0.792 0.772 0.754 ANGLE (deg) -6.4 -12.6 -25.0 -36.5 -47.6 -57.4 -66.6 -74.6 -82.2 -89.3 -95.6 MAGNITUDE (ratio) 4.064 3.997 3.886 3.682 3.484 3.260 3.053 2.829 2.652 2.470 2.328 ANGLE (deg) 172.3 164.9 150.8 137.3 123.8 111.7 101.0 90.3 79.9 69.5 59.5 MAGNITUDE (ratio) 0.001 0.002 0.005 0.006 0.007 0.007 0.006 0.005 0.005 0.005 0.006 ANGLE (deg) 86.9 82.7 74.3 68.9 59.6 57.9 58.5 65.5 83.3 114.9 138.7
BF909WR
MAGNITUDE (ratio) 0.985 0.982 0.973 0.960 0.947 0.936 0.927 0.919 0.913 0.910 0.909 ANGLE (deg) -3.2 -6.4 -12.6 -18.6 -24.2 -29.6 -34.8 -39.8 -44.6 -49.5 -54.6
Noise data: VG2-S Tamb (MHz) Fmin (dB) 2.00 (ratio) 0.603 (deg) 67.71 0.581
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
PACKAGE OUTLINE
BF909WR
handbook, full pagewidth
1.00
1.35 1.15
0.25 0.10
MSB367
Dimensions
Fig.18 SOT343R.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF909WR
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1997
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 9805 4455, Fax. 9805 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 1010, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 733, Fax. +375 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 211, Fax. +359 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Prags Boulevard 1919, DK-2300 COPENHAGEN Tel. 2636, Fax. 0044 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 615800, Fax. +358 61580920 France: Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. 6161, Fax. 6427 Germany: D-20097 HAMBURG, Tel. Fax. Greece: 25th March Street, 17778 TAVROS/ATHENS, Tel. 4894 339/239, Fax. 4814 Hungary: Austria India: Philips INDIA Ltd, Band Building, floor, 254-D, Annie Besant Road, Worli, MUMBAI 025, Tel. 8541, Fax. 0966 Indonesia: Singapore Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki 18053, AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 6752 2531, Fax. 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 6918, Fax. 6919 Singapore: Lorong Payoh, SINGAPORE 1231, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 7430 Johannesburg 2000, Tel. 5911, Fax. 5494 South America: Rocio 220, floor, Suite 04552-903 Paulo, PAULO Brazil, Tel. 2333, Fax. 1849 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 2000, Fax. 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2686, Fax. 7730 Taiwan: Philips Semiconductors, Chien Rd., Sec. TAIPEI, Taiwan Tel. +886 2134 2865, Fax. +886 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Talatpasa Cad. 80640 Tel. 2770, Fax. 6707 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 344, Fax.+381
other countries apply Philips Semiconductors, Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1997
Internet:
SCA55
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
117067/00/02/pp12
Date release: 1997
Document order number:
9397 02669

BF909WR N-channel dual-gate MOS-FET Product specification Superse

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