BF909; BF909R N-channel dual gate MOS-FETs Product specification

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BF909; BF909R N-channel dual gate MOS-FETs Product specification

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BF909; BF909R N-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 1995
Philips Semiconductors
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
FEATURES Specially designed supply voltage High forward transfer admittance Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier Superior cross-modulation performance during AGC. APPLICATIONS applications with supply voltage such television tuners professional communications equipment. DESCRIPTION Enhancement type field-effect transistor plastic microminiature SOT143 SOT143R package.
BF909; BF909R
transistor consists amplifier MOS-FET with source substrate interconnected internal bias circuit ensure good cross-modulation performance during AGC. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
PINNING SYMBOL source drain gate gate DESCRIPTION
handbook, halfpage
handbook, halfpage
view
view
MAM124
MAM125
BF909 marking code: M28.
BF909R marking code: M29.
Fig.1 Simplified outline (SOT143) symbol.
Fig.2 Simplified outline (SOT143R) symbol.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s 1995 drain current total power dissipation operating junction temperature forward transfer admittance input capacitance gate reverse transfer capacitance noise figure PARAMETER drain-source voltage CONDITIONS MIN. TYP. MAX. UNIT
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot PARAMETER drain-source voltage drain current gate current gate current total power dissipation BF909 BF909R Tstg Note Device mounted printed-circuit board. storage temperature operating junction temperature Fig.3 Tamb note Tamb note CONDITIONS MIN.
BF909; BF909R
MAX. +150
UNIT
MLB935
handbook, halfpage
Ptot (mW)
BF909R BF909
Tamb
Fig.3 Power derating curves.
1995
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
THERMAL CHARACTERISTICS SYMBOL BF909 BF909R thermal resistance from junction soldering point BF909 BF909R Notes Device mounted printed-circuit board. temperature soldering point source lead. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(F)S-G1 V(F)S-G2 VG1-S(th) VG2-S(th) IDSX IG1-SS IG2-SS Note connects gate Fig.18. PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage forward source-gate voltage forward source-gate voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current gate cut-off current gate cut-off current CONDITIONS VG2-S IG1-S VG1-S IG2-S VG2-S IS-G1 VG1-S IS-G2 VG2-S VG1-S VG2-S note VG1-S VG2-S VG2-S VG1-S note PARAMETER thermal resistance from junction ambient CONDITIONS note
BF909; BF909R
VALUE
UNIT
MIN.
MAX.
UNIT
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-s Cig2-s PARAMETER forward transfer admittance input capacitance gate input capacitance gate drain-source capacitance noise figure MHz; GSopt; BSopt CONDITIONS pulsed; MIN. TYP. MAX. UNIT
reverse transfer capacitance
1995
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB936
MLB937
handbook, halfpage
handbook, halfpage
Vunw (dBµV)
(mA)
gain reduction (dB)
MHz. funw MHz; Tamb
Fig.4
Unwanted voltage cross-modulation function gain reduction; typical values; Fig.18.
Fig.5 Transfer characteristics; typical values.
MLB938
handbook, halfpage
handbook, halfpage
MLB939
(mA)
(µA)
VG2-S
Fig.7 Fig.6 Output characteristics; typical values.
Gate current function gate voltage; typical values.
1995
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB940
MLB941
handbook, halfpage
handbook, halfpage
(mS)
(mA)
(mA) (µA)
VG2-S
Fig.8
Forward transfer admittance function drain current; typical values.
Fig.9
Drain current function gate current; typical values.
handbook, halfpage
MLB942
MLB943
handbook, halfpage
(mA)
(mA)
VG2-S (connected VGG);
VG2-S connected VGG;
Fig.10 Drain current function gate supply voltage VGG); typical values; Fig.18.
Fig.11 Drain current function gate VGG) drain supply voltage; typical values; Fig.18.
1995
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB944
handbook, halfpage
(mA)
handbook, halfpage
MLB945
(µA)
(connected VGG).
(connected VGG).
Fig.12 Drain current function gate voltage; typical values; Fig.18.
Fig.13 Gate current function gate voltage; typical values; Fig.18.
handbook, halfpage (mS)
MLB946
(µS)
MLB947
(deg)
(MHz)
(MHz)
Tamb
Tamb
Fig.14 Input admittance function frequency; typical values.
Fig.15 Reverse transfer admittance phase function frequency; typical values.
1995
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB948
MLB949
handbook, halfpage
(mS)
(deg)
(mS)
(MHz)
(MHz)
Tamb
Tamb
Fig.16 Forward transfer admittance phase function frequency; typical values.
Fig.17 Output admittance function frequency; typical values.
VAGC
MLD151
Fig.18 Cross-modulation test set-up.
1995
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
Table (MHz) 1000 Table Scattering parameters: Tamb VG2-S MAGNITUDE (ratio) 0.985 0.978 0.957 0.931 0.899 0.868 0.848 0.816 0.792 0.772 0.754 ANGLE (deg) -6.4 -12.6 -25.0 -36.5 -47.6 -57.4 -66.6 -74.6 -82.2 -89.3 -95.6 MAGNITUDE (ratio) 4.064 3.997 3.886 3.682 3.484 3.260 3.053 2.829 2.652 2.470 2.328 ANGLE (deg) 172.3 164.9 150.8 137.3 123.8 111.7 101.0 90.3 79.9 69.5 59.5 MAGNITUDE (ratio) 0.001 0.002 0.005 0.006 0.007 0.007 0.006 0.005 0.005 0.005 0.006 ANGLE (deg) 86.9 82.7 74.3 68.9 59.6 57.9 58.5 65.5 83.3 114.9 138.7
BF909; BF909R
MAGNITUDE (ratio) 0.985 0.982 0.973 0.960 0.947 0.936 0.927 0.919 0.913 0.910 0.909 ANGLE (deg) -3.2 -6.4 -12.6 -18.6 -24.2 -29.6 -34.8 -39.8 -44.6 -49.5 -54.6
Noise data: Tamb VG2-S (MHz) Fmin (dB) 2.00 (ratio) 0.603 (deg) 67.71 0.581
1995
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
PACKAGE OUTLINES
BF909; BF909R
handbook, full pagewidth
0.75 0.60
0.150 0.090
0.88
0.48
MBC845
VIEW
Dimensions
Fig.19 SOT143.
handbook, full pagewidth
0.40 0.25
0.150 0.090
0.48 0.38
0.88 0.78
MBC844
VIEW
Dimensions
Fig.20 SOT143R.
1995
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF909; BF909R
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1995

BF909; BF909R N-channel dual gate MOS-FETs Product specification

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