BF908WR N-channel dual-gate MOS-FET Preliminary specification Fil

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BF908WR N-channel dual-gate MOS-FET Preliminary specification Fil

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BF908WR N-channel dual-gate MOS-FET
Preliminary specification File under Discrete Semiconductors, SC07 1995
Philips Semiconductors
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier GHz. APPLICATIONS applications with supply voltage, such television tuners professional communications equipment. DESCRIPTION Depletion type field effect transistor plastic microminiature SOT343R package. transistor protected against excessive input voltage surges integrated back-to-back diodes between gates source. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling. QUICK REFERENCE DATA SYMBOL Ptot Cig1-s drain current total power dissipation operating junction temperature forward transfer admittance input capacitance gate reverse transfer capacitance noise figure PARAMETER drain-source voltage CONDITIONS MIN. TYP.
Marking code:
BF908WR
PINNING SYMBOL source drain gate gate DESCRIPTION
view
MAM198
Fig.1 Simplified outline (SOT343R) symbol.
MAX.
UNIT
1995
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot Tstg Note Device mounted printed-circuit board. PARAMETER drain-source voltage drain current gate current gate current total power dissipation storage temperature operating junction temperature Tamb Fig.2; note CONDITIONS MIN.
BF908WR
MAX. +150 +150
UNIT
MLD154
handbook, halfpage
Ptot (mW)
Tamb
Fig.2 Power derating curve.
1995
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
THERMAL CHARACTERISTICS SYMBOL Notes Device mounted printed-circuit board. temperature soldering point source lead. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(P)G1-S V(P)G2-S IDSS IG1-SS IG2-SS PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage gate 1-source cut-off voltage gate 2-source cut-off voltage drain-source current gate cut-off current gate cut-off current CONDITIONS VG2-S IG1-S VG1-S IG2-S MIN. TYP. PARAMETER thermal resistance from junction ambient thermal resistance from junction soldering point CONDITIONS note note
BF908WR
VALUE
UNIT
MAX. -1.5
UNIT
VG2-S VG1-S VG2-S VG1-S VG2-S VG1-S VG1-S VG2-S
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-s Cig2-s PARAMETER forward transfer admittance input capacitance gate input capacitance gate drain-source capacitance reverse transfer capacitance noise figure MHz; BSopt MHz; GSopt; BSopt CONDITIONS pulsed; MIN. TYP. MAX. UNIT
1995
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
BF908WR
handbook, halfpage
MRC281
(mA)
VG2-S
handbook, halfpage
MRC282
(mA)
VG1-S
-0.1 -0.2
-0.6 -0.4 -0.2 VG1-S
-0.3
VG2-S
Fig.3 Transfer characteristics; typical values.
Fig.4 Output characteristics; typical values.
(mS)
MRC280
(mS)
MRC276
VG2-S (mA)
Fig.5
Forward transfer admittance function drain current; typical values.
Fig.6
Forward transfer admittance function junction temperature; typical values.
1995
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
PACKAGE OUTLINE
BF908WR
1.00
1.35 1.15
0.25 0.10
MSB367
Dimensions
Fig.7 SOT343R.
1995
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF908WR
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1995

BF908WR N-channel dual-gate MOS-FET Preliminary specification Fil

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