BF908; BF908R Dual-gate MOS-FETs Product specification Supersedes
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BF908; BF908R Dual-gate MOS-FETs
Product specification Supersedes data April 1995 File under Discrete Semiconductors, SC07 1996
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier GHz. APPLICATIONS applications with supply voltage, such television tuners professional communications equipment. DESCRIPTION Fig.1 Depletion type field-effect transistor plastic microminiature SOT143 SOT143R package. transistors protected against excessive input voltage surges integrated back-to-back diodes between gates source. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
handbook, halfpage
handbook, halfpage
BF908; BF908R
view
MAM039
Simplified outline (SOT143) symbol; BF908.
PINNING SYMBOL source drain gate gate DESCRIPTION
view
MAM040
Fig.2
Simplified outline (SOT143R) symbol; BF908R.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s drain current total power dissipation operating junction temperature forward transfer admittance input capacitance gate reverse transfer capacitance noise figure PARAMETER drain-source voltage CONDITIONS MIN. TYP. MAX. UNIT
1996
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL ±IG1 ±IG2 Ptot PARAMETER drain-source voltage drain current gate current gate current total power dissipation BF908 BF908R Tstg Note Device mounted printed-circuit board. storage temperature operating junction temperature Fig.3; note Tamb Tamb CONDITIONS
BF908; BF908R
MIN.
MAX. +150
UNIT
handbook, halfpage
MRC275
(mW)
BF908 BF908R
Tamb
Fig.3 Power derating curves.
1996
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
THERMAL CHARACTERISTICS SYMBOL BF908 BF908R Note Device mounted printed-circuit board. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL PARAMETER CONDITIONS VG2-S IG1-S VG1-S IG2-S PARAMETER thermal resistance from junction ambient CONDITIONS note
BF908; BF908R
VALUE
UNIT
MIN.
TYP.
MAX.
UNIT
±V(BR)G1-SS gate 1-source breakdown voltage ±V(BR)G2-SS gate 2-source breakdown voltage -V(P)G1-S -V(P)G2-S IDSS ±IG1-SS ±IG2-SS gate 1-source cut-off voltage gate 2-source cut-off voltage drain-source current gate cut-off current gate cut-off current
VG2-S VG1-S VG2-S VG1-S VG2-S VG1-S VG1-S VG2-S
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-s Cig2-s PARAMETER forward transfer admittance input capacitance gate input capacitance gate output capacitance reverse transfer capacitance noise figure MHz; BSopt MHz; GSopt; BSopt CONDITIONS pulsed; MIN. TYP. MAX. UNIT
1996
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
handbook, halfpage
MRC281
MRC282
(mA)
VG2-S
handbook, halfpage
VG1-S
(mA)
-0.1 -0.2
-0.6 -0.4 -0.2
-0.3
VG1-S
VG2-S
Fig.4 Transfer characteristics; typical values.
Fig.5 Output characteristics; typical values.
(mS)
MRC280
(mS)
MRC276
VG2-S (mA)
VG2-S
Fig.6
Forward transfer admittance function drain current; typical values.
Fig.7
Forward transfer admittance function junction temperature; typical values.
1996
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
Table (MHz) Scattering parameters MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg)
BF908; BF908R
MAGNITUDE (ratio) ANGLE (deg)
VG2-S Tamb 1000 0.998 0.994 0.979 0.962 0.939 0.914 0.892 0.865 0.837 0.811 0.785 -5.1 -10.4 -20.8 -30.3 -40.1 -49.1 -57.1 -64.4 -71.6 -78.1 -84.5 -5.3 -10.9 -21.6 -31.7 -41.7 -51.1 -59.1 -66.8 -73.9 -80.7 -87.0 3.537 3.502 3.450 3.318 3.234 3.093 2.912 2.774 2.616 2.479 3.329 173.5 167.7 154.9 143.7 131.9 120.7 111.1 101.0 91.4 81.9 72.5 0.001 0.001 0.003 0.004 0.005 0.006 0.005 0.005 0.004 0.004 0.003 98.2 88.8 74.6 69.5 65.6 64.4 63.1 65.2 70.8 87.4 108.0 0.996 0.994 0.987 0.983 0.980 0.974 0.969 0.966 0.965 0.965 0.966 -2.4 -4.9 -9.5 -13.9 -18.5 -22.8 -27.0 -31.2 -35.4 -39.4 -43.7 -2.4 -5.0 -9.7 -14.2 -18.8 -23.2 -27.4 -31.6 -35.9 -40.0 -44.2
VG2-S Tamb 1000 Table 0.998 0.994 0.976 0.957 0.934 0.907 0.885 0.851 0.826 0.797 0.773 Noise data (MHz) Fmin (dB) (ratio) (deg) 3.983 3.943 3.878 3.722 3.614 3.446 3.240 3.072 2.891 2.733 2.569 173.4 167.5 154.7 143.3 131.6 120.4 110.9 100.9 91.3 81.9 72.8 0.001 0.001 0.003 0.004 0.005 0.006 0.005 0.005 0.004 0.004 0.004 95.5 93.6 74.3 70.0 63.5 62.2 59.6 64.8 67.8 85.0 102.9 0.994 0.991 0.984 0.979 0.975 0.969 0.964 0.961 0.959 0.958 0.958
VG2-S Tamb 1.50 0.720 56.7 0.580 VG2-S Tamb 1.50 0.700 59.2 0.520
1996
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
PACKAGE OUTLINES
BF908; BF908R
handbook, full pagewidth
0.75 0.60
0.150 0.090
0.88
0.48
MBC845
VIEW
Dimensions
Fig.8 SOT143.
handbook, full pagewidth
0.40 0.25
0.150 0.090
0.48 0.38
0.88 0.78
MBC844
VIEW
Dimensions
Fig.9 SOT143R.
1996
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF908; BF908R
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1996
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