BF904WR N-channel dual-gate MOS-FET Product specification File un

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BF904WR N-channel dual-gate MOS-FET Product specification File un

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BF904WR N-channel dual-gate MOS-FET
Product specification File under Discrete Semiconductors, SC07 1995
Philips Semiconductors
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
FEATURES Specially designed supply voltage Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier Superior cross-modulation performance during AGC. APPLICATIONS applications with supply voltage such television tuners professional communications equipment. DESCRIPTION Enhancement type field-effect transistor plastic microminiature SOT343R package. transistor consists amplifier MOS-FET with source substrate interconnected internal bias circuit ensure good cross-modulation performance during AGC. CAUTION
Marking code:
handbook, halfpage
BF904WR
PINNING SYMBOL source drain gate gate DESCRIPTION
view
MAM192
device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
Fig.1 Simplified outline (SOT343R) symbol.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s drain current total power dissipation operating junction temperature forward transfer admittance input capacitance gate reverse transfer capacitance noise figure PARAMETER drain-source voltage CONDITIONS MIN. TYP. MAX. UNIT
1995
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot Tstg Note Device mounted printed-circuit board. PARAMETER drain-source voltage drain current gate current gate current total power dissipation storage temperature operating junction temperature Tamb Fig.2; note CONDITIONS MIN.
BF904WR
MAX.
UNIT
+150 +150
MLD150
handbook, halfpage
Ptot (mW)
Tamb
Fig.2 Power derating curve.
1995
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
THERMAL CHARACTERISTICS SYMBOL Notes Device mounted printed-circuit board. temperature soldering point source lead. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(F)S-G1 V(F)S-G2 VG1-S(th) VG2-S(th) IDSX IG1-SS IG2-SS Note connects gate DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-s Cig2-s PARAMETER forward transfer admittance input capacitance gate input capacitance gate drain-source capacitance noise figure MHz; BSopt MHz; GSopt; BSopt CONDITIONS pulsed; MIN. TYP. PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage forward source-gate voltage forward source-gate voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current gate cut-off current gate cut-off current CONDITIONS VG2-S IG1-S VG1-S IG2-S VG2-S IS-G1 VG1-S IS-G2 VG2-S VG1-S VG2-S note VG2-S VG1-S VG1-S VG2-S MIN. PARAMETER thermal resistance from junction ambient thermal resistance from junction soldering point CONDITIONS note note
BF904WR
VALUE
UNIT
MAX.
UNIT
MAX.
UNIT
reverse transfer capacitance
1995
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF904WR
(mS)
MLD268
MRA769
handbook, halfpage gain
reduction (dB)
VAGC
MHz.
Fig.3
Forward transfer admittance function junction temperature; typical values.
Fig.4
Typical gain reduction function voltage.
handbook, halfpage
MRA771
MLD270
(mA)
Vunw
gain reduction (dB)
MHz. funw MHz; Tamb
Fig.5
Unwanted voltage cross-modulation function gain reduction; typical values; Fig.19.
Fig.6 Transfer characteristics; typical values.
1995
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF904WR
MLD269
MLD271
handbook, halfpage
(mA)
handbook, halfpage
(µA)
VG2-S
Fig.8 Fig.7 Output characteristics; typical values.
Gate current function gate voltage; typical values.
MLD272
MLD273
handbook, halfpage
handbook, halfpage
(mS)
(mA)
(mA)
(µA)
VG2-S
Fig.9
Forward transfer admittance function drain current; typical values.
Fig.10 Drain current function gate current; typical values.
1995
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF904WR
MLD275
handbook, halfpage
MLD274
handbook, halfpage
(mA)
(mA)
VG2-S (connected VGG);
VG2-S connected VGG;
Fig.11 Drain current function gate supply voltage VGG); typical values; Fig.19.
Fig.12 Drain current function gate VGG) drain supply voltage; typical values; Fig.19.
MLD276
handbook, halfpage
(mA)
handbook, halfpage
MLB945
(µA)
(connected VGG).
(connected VGG).
Fig.13 Drain current function gate voltage; typical values; Fig.19.
Fig.14 Gate current function gate voltage; typical values; Fig.19.
1995
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF904WR
handbook, halfpage (mS)
MLD277
(µS)
MLD278
(deg)
(MHz)
(MHz)
Tamb
Tamb
Fig.15 Input admittance function frequency; typical values.
Fig.16 Reverse transfer admittance phase function frequency; typical values.
MLD279
MLD280
handbook, halfpage
(mS)
(deg)
(mS)
(MHz)
(MHz)
Tamb
Tamb
Fig.17 Forward transfer admittance phase function frequency; typical values.
Fig.18 Output admittance function frequency; typical values.
1995
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF904WR
VAGC
MLD171
Fig.19 Cross-modulation test set-up.
1995
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
Table (MHz) 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 Table Scattering parameters: VG2-S MAGNITUDE (ratio) 0.989 0.985 0.976 0.958 0.942 0.918 0.899 0.876 0.852 0.823 0.800 0.750 0.719 0.682 0.642 0.602 0.547 0.596 0.682 0.771 0.793 ANGLE (deg) -3.4 -8.3 -16.4 -24.1 -32.0 -39.3 -46.0 -52.6 -58.8 -64.9 -70.9 -82.4 -92.7 -102.5 -109.8 -116.5 -124.9 -128.7 -132.6 -142.5 -157.5 MAGNITUDE (ratio) 2.420 2.414 2.368 2.301 2.251 2.170 2.080 2.001 1.924 1.829 1.747 1.621 1.535 1.424 1.349 1.283 1.130 1.018 0.979 0.804 0.541 ANGLE (deg) 175.7 169.1 158.8 148.5 138.8 129.5 120.7 112.1 103.2 94.7 86.5 70.7 54.6 39.4 22.5 -15.1 -49.1 -79.4 -116.2 -153.5 MAGNITUDE (ratio) 0.000 0.001 0.003 0.004 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.008 0.010 0.013 0.018 0.014 0.040 0.077 0.120 0.149 ANGLE (deg) 79.9 78.3 80.3 73.7 70.7 67.2 67.8 68.6 72.9 78.7 88.3 120.5 139.8 137.8 156.8 175.1 172.6 -163.9 -164.0 178.8 158.3
BF904WR
MAGNITUDE (ratio) 0.993 0.992 0.987 0.980 0.974 0.966 0.958 0.951 0.944 0.937 0.933 0.928 0.930 0.924 0.928 0.928 0.887 0.837 0.778 0.629 0.479 ANGLE (deg) -1.6 -3.9 -7.8 -11.4 -15.2 -18.7 -22.2 -25.5 -28.9 -32.1 -35.2 -41.7 -48.4 -54.9 -62.9 -73.1 -81.0 -95.8 -109.6 -119.5 -119.9
Noise data: VG2-S (MHz) Fmin (dB) 2.00 (ratio) .686 (deg) 49.6 50.40
1995
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
PACKAGE OUTLINE
BF904WR
1.00
1.35 1.15
0.25 0.10
MSB367
Dimensions
Fig.20 SOT343R.
1995
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF904WR
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1995

BF904WR N-channel dual-gate MOS-FET Product specification File un

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