BF904; BF904R N-channel dual gate MOS-FETs Product specification
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BF904; BF904R N-channel dual gate MOS-FETs
Product specification Supersedes data 1997 1999
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
FEATURES Specially designed supply voltage Short channel transistor with high transfer admittance input capacitance ratio noise gain controlled amplifier Superior cross-modulation performance during AGC. APPLICATIONS applications with supply voltage such television tuners professional communications equipment. DESCRIPTION Enhancement type field-effect transistor plastic microminiature SOT143B SOT143R package. transistor consists amplifier MOS-FET with source
BF904; BF904R
substrate interconnected internal bias circuit ensure good cross-modulation performance during AGC. CAUTION This product supplied anti-static packing prevent damage caused electrostatic discharge during transport handling. further information, refer Philips specs.: SNW-EQ-608, SNW-FQ-302A SNW-FQ-302B.
PINNING SYMBOL source drain gate gate DESCRIPTION
handbook, halfpage
handbook, halfpage
view
view
MAM124
MAM125
BF904 marking code: M04.
BF904R marking code: M06.
Fig.1 Simplified outline (SOT143B) symbol.
Fig.2 Simplified outline (SOT143R) symbol.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s 1999 drain current total power dissipation operating junction temperature forward transfer admittance input capacitance gate reverse transfer capacitance noise figure PARAMETER drain-source voltage CONDITIONS MIN. TYP. MAX. UNIT
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot PARAMETER drain-source voltage drain current gate current gate current total power dissipation BF904 BF904R Tstg Note Device mounted printed-circuit board. storage temperature operating junction temperature Fig.3 Tamb note Tamb note CONDITIONS MIN.
BF904; BF904R
MAX. +150
UNIT
handbook, halfpage
MRA770
(mW)
BF904 BF904R
Tamb
Fig.3 Power derating curves.
1999
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
THERMAL CHARACTERISTICS SYMBOL BF904 BF904R thermal resistance from junction soldering point BF904 BF904R Notes Device mounted printed-circuit board. temperature soldering point source lead. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(F)S-G1 V(F)S-G2 VG1-S(th) VG2-S(th) IDSX IG1-SS IG2-SS Note connects gate Fig.20. PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage forward source-gate voltage forward source-gate voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current gate cut-off current gate cut-off current CONDITIONS VG2-S IG1-S VG1-S IG2-S VG2-S IS-G1 VG1-S IS-G2 VG2-S VG1-S VG2-S note VG2-S VG1-S VG1-S VG2-S note PARAMETER thermal resistance from junction ambient CONDITIONS note
BF904; BF904R
VALUE
UNIT
MIN.
MAX.
UNIT
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-s Cig2-s PARAMETER forward transfer admittance input capacitance gate input capacitance gate drain-source capacitance noise figure MHz; BSopt MHz; GSopt; BSopt CONDITIONS pulsed; MIN. TYP. MAX. UNIT
reverse transfer capacitance
1999
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
(mS)
MLD268
MRA769
handbook, halfpage gain
reduction (dB)
VAGC
MHz.
Fig.4
Transfer admittance function junction temperature; typical values.
Fig.5
Typical gain reduction function voltage.
handbook, halfpage
MRA771
MLD270
(mA)
Vunw
gain reduction (dB)
MHz. funw MHz; Tamb
Fig.6
Unwanted voltage cross-modulation function gain reduction; typical values; Fig.20.
Fig.7 Transfer characteristics; typical values.
1999
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
MLD269
MLD271
handbook, halfpage
(mA)
handbook, halfpage
(µA)
VG2-S
Fig.9 Fig.8 Output characteristics; typical values.
Gate current function gate voltage; typical values.
MLD272
MLD273
handbook, halfpage
handbook, halfpage
(mS)
(mA)
(mA)
(µA)
VG2-S
Fig.10 Forward transfer admittance function drain current; typical values.
Fig.11 Drain current function gate current; typical values.
1999
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
MLD275
MLD274
handbook, halfpage
handbook, halfpage
(mA)
(mA)
VG2-S (connected VGG);
VG2-S connected VGG;
Fig.12 Drain current function gate supply voltage VGG); typical values; Fig.20.
Fig.13 Drain current function gate VGG) drain supply voltage; typical values; Fig.20.
MLD276
handbook, halfpage
(mA)
handbook, halfpage
MLB945
(µA)
(connected VGG).
(connected VGG).
Fig.14 Drain current function gate voltage; typical values; Fig.20.
Fig.15 Gate current function gate voltage; typical values; Fig.20.
1999
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
handbook, halfpage (mS)
MLD277
(µS)
MLD278
(deg)
(MHz)
(MHz)
Tamb
Tamb
Fig.16 Input admittance function frequency; typical values.
Fig.17 Reverse transfer admittance phase function frequency; typical values.
MLD279
MLD280
handbook, halfpage
(mS)
(deg)
(mS)
(MHz)
(MHz)
Tamb
Tamb
Fig.18 Forward transfer admittance phase function frequency; typical values.
Fig.19 Output admittance function frequency; typical values.
1999
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
VAGC
MLD171
Fig.20 Cross-modulation test set-up.
1999
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
Table (MHz) 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 Table Scattering parameters: VG2-S MAGNITUDE (ratio) 0.989 0.985 0.976 0.958 0.942 0.918 0.899 0.876 0.852 0.823 0.800 0.750 0.719 0.682 0.642 0.602 0.547 0.596 0.682 0.771 0.793 ANGLE (deg) -3.4 -8.3 -16.4 -24.1 -32.0 -39.3 -46.0 -52.6 -58.8 -64.9 -70.9 -82.4 -92.7 -102.5 -109.8 -116.5 -124.9 -128.7 -132.6 -142.5 -157.5 MAGNITUDE (ratio) 2.420 2.414 2.368 2.301 2.251 2.170 2.080 2.001 1.924 1.829 1.747 1.621 1.535 1.424 1.349 1.283 1.130 1.018 0.979 0.804 0.541 ANGLE (deg) 175.7 169.1 158.8 148.5 138.8 129.5 120.7 112.1 103.2 94.7 86.5 70.7 54.6 39.4 22.5 -15.1 -49.1 -79.4 -116.2 -153.5 MAGNITUDE (ratio) 0.000 0.001 0.003 0.004 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.008 0.010 0.013 0.018 0.014 0.040 0.077 0.120 0.149 ANGLE (deg) 79.9 78.3 80.3 73.7 70.7 67.2 67.8 68.6 72.9 78.7 88.3 120.5 139.8 137.8 156.8 175.1 172.6 -163.9 -164.0 178.8 158.3
BF904; BF904R
MAGNITUDE (ratio) 0.993 0.992 0.987 0.980 0.974 0.966 0.958 0.951 0.944 0.937 0.933 0.928 0.930 0.924 0.928 0.928 0.887 0.837 0.778 0.629 0.479 ANGLE (deg) -1.6 -3.9 -7.8 -11.4 -15.2 -18.7 -22.2 -25.5 -28.9 -32.1 -35.2 -41.7 -48.4 -54.9 -62.9 -73.1 -81.0 -95.8 -109.6 -119.5 -119.9
Noise data: VG2-S (MHz) Fmin (dB) 2.00 (ratio) 0.686 (deg) 49.6 50.40
1999
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
PACKAGE OUTLINES Plastic surface mounted package; leads
BF904; BF904R
SOT143B
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT143B
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
Plastic surface mounted package; reverse pinning; leads
SOT143R
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.55 0.25 0.45 0.25
OUTLINE VERSION SOT143R
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-03-10
1999
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF904; BF904R
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1999
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
NOTES
BF904; BF904R
1999
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
NOTES
BF904; BF904R
1999
Philips Semiconductors worldwide company
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other countries apply Philips Semiconductors, International Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1999
Internet:
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
125004/00/05/pp16
Date release: 1999
Document order number:
9397 05898
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