BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Produ

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BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Produ

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BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs
Product specification Supersedes data 1999 2000
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
FEATURES Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier Partly internal self-biasing circuit ensure good cross-modulation performance during good stabilization. APPLICATIONS applications with supply voltage, such digital analogue television tuners professional communications equipment.
handbook, columns
BF1202; BF1202R; BF1202WR
PINNING DESCRIPTION source drain gate gate
view
MSB035
handbook, columns
BF1202R marking code:
Fig.2
Simplified outline (SOT143R).
page
DESCRIPTION Enhancement type N-channel field-effect transistor with source substrate interconnected. Integrated diodes between gates source protect against excessive input voltage surges. BF1202, BF1202R BF1202WR encapsulated SOT143B, SOT143R SOT343R plastic packages respectively. QUICK REFERENCE DATA SYMBOL Ptot Cig1-ss Crss Xmod PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance gate reverse transfer capacitance noise figure cross-modulation operating junction temperature CAUTION This product supplied anti-static packing prevent damage caused electrostatic discharge during transport handling. further information, refer Philips specs.: SNW-EQ-608, SNW-FQ-302A SNW-FQ-302B. 2000 input level CONDITIONS MIN. TYP. MAX. UNIT dBµV
view
MSB014
view
MSB842
BF1202 marking code:
BF1202WR marking code:
Fig.1
Simplified outline (SOT143B).
Fig.3
Simplified outline (SOT343R).
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL Ptot PARAMETER drain-source voltage drain current gate current gate current total power dissipation BF1202; BF1202R BF1202WR Tstg Note temperature soldering point source lead. THERMAL CHARACTERISTICS SYMBOL BF1202; BF1202R BF1202WR PARAMETER thermal resistance from junction soldering point storage temperature operating junction temperature note note CONDITIONS
BF1202; BF1202R; BF1202WR
MIN.
MAX. +150
UNIT
VALUE
UNIT
handbook, halfpage
Ptot
MCD951
(mW)
(°C)
BF1202WR. BF1202; BF1202R.
Fig.4 Power derating curve.
2000
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)DSS PARAMETER drain-source breakdown voltage CONDITIONS VG1-S VG2-S VG2-S IG1-S VG1-S IG2-S VG2-S IS-G1 VG1-S IS-G2 VG2-S VG1-S
BF1202; BF1202R; BF1202WR
MIN.
MAX.
UNIT
V(BR)G1-SS gate 1-source breakdown voltage V(BR)G2-SS gate 2-source breakdown voltage V(F)S-G1 V(F)S-G2 VG1-S(th) VG2-S(th) IDSX IG1-SS IG2-SS Note connects forward source-gate voltage forward source-gate voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current gate cut-off current gate cut-off current
VG2-S note VG2-S VG1-S VG1-S VG2-S
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-ss Cig2-ss Coss Crss PARAMETER forward transfer admittance input capacitance gate input capacitance gate output capacitance noise figure 10.7 MHz; MHz; MHz; power gain MHz; opt; MHz; opt; MHz; opt; Xmod cross-modulation input level MHz; funw MHz; note Note Measured Fig.21 test circuit. dBµV dBµV dBµV CONDITIONS pulsed; MIN. TYP. 0.85 34.5 30.5 26.5 MAX. UNIT
reverse transfer capacitance
2000
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R; BF1202WR
handbook, halfpage
MCD952
(mA)
VG2-S
handbook, halfpage
MCD953
(mA)
VG1-S
VG1-S
VG2-S
Fig.5 Transfer characteristics; typical values.
Fig.6 Output characteristics; typical values.
handbook, halfpage
MCD954
(µA)
VG2-S
handbook, halfpage
MCD955
(mS) VG2-S
VG1-S (mA)
Fig.7
Gate current function gate voltage; typical values.
Fig.8
Forward transfer admittance function drain current; typical values.
2000
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R; BF1202WR
handbook, halfpage
MCD956
(mA)
handbook, halfpage
MCD957
(mA)
(µA)
VG2-S
VG2-S (connected VGG); Fig.21.
Fig.9
Drain current function gate current; typical values.
Fig.10 Drain current function gate supply voltage VGG); typical values.
handbook, halfpage
MCD958
(mA)
handbook, halfpage
MCD959
(mA)
VG2-S
VG2-S connected VGG; Fig.21.
(connected VGG); Fig.21.
Fig.11 Drain current function gate VGG) drain supply voltage; typical values.
Fig.12 Drain current function gate voltage; typical values.
2000
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R; BF1202WR
handbook, halfpage
MCD960
(µA)
handbook, halfpage gain
MCD961
reduction (dB)
VG2-S
VAGC
(connected VGG); Fig.21.
MHz; Tamb
Fig.13 Gate current function gate voltage; typical values.
Fig.14 Typical gain reduction function voltage; Fig.21.
handbook, halfpage
MCD962
Vunw (dBµV)
handbook, halfpage
MCD963
(mA)
gain reduction (dB) gain reduction (dB)
MHz; funw MHz; Tamb
MHz; Tamb
Fig.15 Unwanted voltage cross-modulation function gain reduction; typical values; Fig.21.
Fig.16 Drain current function gain reduction; typical values; Fig.21.
2000
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R; BF1202WR
handbook, halfpage (mS)
MCD964
handbook, halfpage (µS)
MCD965
-103 (deg) -102
10-1
(GHz)
(MHz)
Tamb
Tamb
Fig.17 Input admittance function frequency; typical values.
Fig.18 Reverse transfer admittance phase function frequency; typical values.
handbook, halfpage (mS)
MCD966
-102 (deg)
handbook, halfpage
MCD967
(mS)
10-1
(MHz)
10-2
(MHz)
Tamb
Tamb
Fig.19 Forward transfer admittance phase function frequency; typical values.
Fig.20 Output admittance function frequency; typical values.
2000
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R; BF1202WR
handbook, full pagewidth
VAGC
RGEN
MGS315
Fig.21 Cross-modulation test set-up.
Table (MHz) 1000 Table
Scattering parameters: VG2-S Tamb MAGNITUDE (ratio) 0.988 0.988 0.984 0.977 0.965 0.951 0.936 0.919 0.903 0.887 0.870 ANGLE (deg) -3.26 -6.52 -12.99 -19.39 -25.65 -31.76 -37.68 -43.42 -48.94 -54.25 -59.34 MAGNITUDE (ratio) 2.989 3.017 2.990 2.949 2.913 2.853 2.793 2.727 2.664 2.593 2.518 ANGLE (deg) 176.2 172.5 165.0 157.6 150.3 143.2 136.3 129.5 123.0 116.7 110.5 MAGNITUDE (ratio) 0.0005 0.0009 0.0018 0.0027 0.0036 0.0039 0.0042 0.0044 0.0043 0.0041 0.0038 ANGLE (deg) 92.6 88.0 82.5 78.2 75.4 71.8 69.9 68.9 68.5 70.7 72.4 MAGNITUDE (ratio) 0.995 0.995 0.994 0.992 0.990 0.988 0.986 0.984 0.980 0.975 0.970 ANGLE (deg) -1.50 -3.01 -5.95 -8.86 -11.79 -14.65 -17.41 -20.10 -22.69 -25.27 -27.90
Noise data: VG2-S Tamb (MHz) Fmin (dB) (ratio) 0.805 0.725 (deg) 28.5 47.2
2000
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
PACKAGE OUTLINES Plastic surface mounted package; leads
BF1202; BF1202R; BF1202WR
SOT143B
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT143B
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2000
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R; BF1202WR
Plastic surface mounted package; reverse pinning; leads
SOT143R
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.55 0.25 0.45 0.25
OUTLINE VERSION SOT143R
REFERENCES JEDEC EIAJ SC-61B
EUROPEAN PROJECTION
ISSUE DATE 97-03-10 99-09-13
2000
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R; BF1202WR
Plastic surface mounted package; reverse pinning; leads
SOT343R
detail
scale
DIMENSIONS original dimensions) UNIT 0.25 0.10 1.35 1.15 1.15 0.45 0.15 0.23 0.13
OUTLINE VERSION SOT343R
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
2000
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development
BF1202; BF1202R; BF1202WR
DEFINITIONS This data sheet contains design target goal specifications product development. Specification change manner without notice. This data sheet contains preliminary data, supplementary data will published later date. Philips Semiconductors reserves right make changes time without notice order improve design supply best possible product. This data sheet contains final specifications. Philips Semiconductors reserves right make changes time without notice order improve design supply best possible product.
Preliminary specification
Qualification
Product specification
Production
Note Please consult most recently issued data sheet before initiating completing design. DEFINITIONS Short-form specification data short-form specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook. Limiting values definition Limiting values given accordance with Absolute Maximum Rating System (IEC 60134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Applications that described herein these products illustrative purposes only. Philips Semiconductors make representation warranty that such applications will suitable specified without further testing modification. DISCLAIMERS Life support applications These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips Semiconductors customers using selling these products such applications their risk agree fully indemnify Philips Semiconductors damages resulting from such application. Right make changes Philips Semiconductors reserves right make changes, without notice, products, including circuits, standard cells, and/or software, described contained herein order improve design and/or performance. Philips Semiconductors assumes responsibility liability these products, conveys licence title under patent, copyright, mask work right these products, makes representations warranties that these products free from patent, copyright, mask work right infringement, unless otherwise specified.
2000
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
NOTES
BF1202; BF1202R; BF1202WR
2000
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
NOTES
BF1202; BF1202R; BF1202WR
2000
Philips Semiconductors worldwide company
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other countries apply Philips Semiconductors, International Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 2000
Internet:
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
603504/02/pp16
Date release: 2000
Document order number:
9397 06902

BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Produ

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