BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product sp

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BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product sp

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BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs
Product specification Supersedes data 1997 File under Discrete Semiconductors, SC07 1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
FEATURES Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier GHz. Internal self-biasing circuit ensure good cross-modulation performance during good stabilization. APPLICATIONS applications with supply voltage, such television tuners professional communications equipment.
page
BF1105; BF1105R; BF1105WR
PINNING DESCRIPTION source drain gate gate
view
MSB035
handbook, columns
BF1105R marking code: NAp.
Fig.2
Simplified outline (SOT143R).
alfpage
DESCRIPTION Enhancement type N-channel field-effect transistor with source substrate interconnected. Integrated diodes between gates source protect against excessive input voltage surges. BF1105, BF1105R BF1105WR encapsulated SOT143B, SOT143R SOT343R plastic packages respectively. QUICK REFERENCE DATA SYMBOL Ptot Cig1-ss Crss Xmod PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance gate reverse transfer capacitance noise figure cross-modulation operating junction temperature CAUTION This product supplied anti-static packing prevent damage caused electrostatic discharge during transport handling. further information, refer Philips specs.: SNW-EQ-608, SNW-FQ-302A SNW-FQ-302B. Tamb CONDITIONS MIN. TYP. MAX. UNIT dBµV
view
MSB014
view
MSB842
BF1105 marking code: NEp.
BF1105WR marking code:
Fig.1
Simplified outline (SOT143B).
Fig.3
Simplified outline (SOT343R).
input level
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot Tstg Note Device mounted printed-circuit board. PARAMETER drain-source voltage drain current gate current gate current total power dissipation storage temperature operating junction temperature
BF1105; BF1105R; BF1105WR
CONDITIONS Tamb note Fig.4
MIN.
MAX. +150 +150
UNIT
MGM243
handbook, halfpage
Ptot (mW)
Tamb (°C)
Fig.4 Power derating curve.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
THERMAL CHARACTERISTICS SYMBOL Note Device mounted printed-circuit board. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)DSS PARAMETER drain-source breakdown voltage PARAMETER thermal resistance from junction ambient free thermal resistance from junction soldering point
BF1105; BF1105R; BF1105WR
CONDITIONS note
VALUE
UNIT
CONDITIONS VG1-S VG2-S
MIN.
TYP.
MAX.
UNIT
V(BR)G1-SS gate 1-source breakdown voltage VG2-S IG1-S V(BR)G2-SS gate 2-source breakdown voltage VG1-S IG2-S VG2-S (th) IDSX IG1-SS IG2-SS gate 2-source threshold voltage self-biasing drain current gate cut-off current gate cut-off current VG1-S VG2-S VG1-S VG2-S VG1-S VG2-S
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S self-biasing current; unless otherwise specified. SYMBOL Cig1-ss Cig2-ss Coss Crss PARAMETER forward transfer admittance input capacitance gate input capacitance gate output capacitance noise figure power gain MHz; opt; opt; MHz; Fig.16 opt; opt; MHz; Fig.17 Xmod cross-modulation input level AGC; MHz; funw MHz; Fig.18 input level AGC; MHz; funw MHz; Fig.18 CONDITIONS pulsed; MIN. TYP. MAX. UNIT dBµV dBµV
reverse transfer capacitance
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
handbook, halfpage
MGM244
(mA)
handbook, halfpage
MGM245
(mA) VG2-S
VG2-S
Fig.5 Output characteristics; typical values.
Fig.6 Transfer characteristics; typical values.
MGM246
handbook, halfpage
handbook, halfpage
MGM247
(mS)
VG2-S
(mA)
(mA)
VG2-S
Fig.7
Forward transfer admittance function drain current; typical values.
Fig.8
Drain current function gate voltage; typical values.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
fMGM248
handbook, halfpage
MGM249
handbook, halfpage
(mA)
(mA)
(µA)
VG2-S
VG2-S
Fig.9
Drain current function drain-source voltage; typical values.
Fig.10 Drain current function gate current; typical values.
MGM250
handbook, halfpage
Vunw (dBµV)
gain reduction (dB)
VG2nom IDnom Iself bias; MHz; funw MHz; Tamb
Fig.11 Unwanted voltage cross-modulation function gain reduction; typical values (see Fig.18).
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
handbook, halfpage (mS)
MGM251
handbook, halfpage |yrs| (µS)
MGM252
-103 (deg) -102
|yrs| 10-1
10-2
(MHz)
(MHz)
VG2-S Tamb
VG2-S Tamb
Fig.12 Input admittance function frequency; typical values.
Fig.13 Reverse transfer admittance phase function frequency; typical values.
handbook, halfpage |yfs| (mS) |yfs|
MGM253
-102 (deg)
MGM254
handbook, halfpage
(mS)
10-1
(MHz)
10-2
(MHz)
VG2-S Tamb
VG2-S Tamb
Fig.14 Forward transfer admittance phase function frequency; typical values.
Fig.15 Output admittance function frequency; typical values.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
handbook, full pagewidth
VAGC
BF1105 BF1105R BF1105WR output
input
BB405 Vtun input
BB405
Vtun output
MGM255
MHz. turns, internal diameter copper wire. turns, internal diameter copper wire; tapped approximately half turn from cold side, adjusted
Fig.16 Gain test circuit.
handbook, full pagewidth
VAGC
input
BF1105 BF1105R BF1105WR
,,,, ,,,,
output
MGM256
MHz. silvered copper wire above ground plane. silvered copper wire above ground plane. turns copper wire without spacing, internal diameter approx.
Fig.17 Gain test circuit.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
handbook, full pagewidth
Rgen
BF1105 BF1105R BF1105WR
MGM257
Fig.18 Cross-modulation test set-up.
Table (MHz) 1000 Table
Scattering parameters: VG2-S MAGNITUDE (ratio) 0.994 0.991 0.982 0.968 0.956 0.937 0.918 0.897 0.878 0.858 0.840 ANGLE (deg) -3.8 -7.5 -14.7 -21.7 -28.8 -35.4 -41.8 -48.1 -54.0 -59.9 -65.5 MAGNITUDE (ratio) 3.060 3.047 3.004 2.932 2.896 2.815 2.735 2.651 2.575 2.482 2.396 ANGLE (deg) 175.4 170.9 162.1 153.4 145.3 137.1 129.2 121.5 114.0 106.5 99.5 MAGNITUDE (ratio) 0.000 0.002 0.003 0.004 0.006 0.007 0.007 0.008 0.008 0.008 0.008 ANGLE (deg) 86.9 86.1 82.7 79.7 77.8 76.7 76.3 76.7 79.7 82.2 88.0 MAGNITUDE (ratio) 0.985 0.983 0.980 0.976 0.972 0.967 0.961 0.955 0.948 0.941 0.935 ANGLE (deg) -2.1 -4.2 -8.3 -12.1 -16.2 -20.0 -23.7 -27.3 -30.9 -34.4 -37.9
Noise data: VG2-S (MHz) Fmin (dB) (ratio) 0.674 (deg) 39.7 37.15
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
PACKAGE OUTLINES Plastic surface mounted package; leads
BF1105; BF1105R; BF1105WR
SOT143B
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT143B
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
Plastic surface mounted package; reverse pinning; leads
SOT143R
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.55 0.25 0.45 0.25
OUTLINE VERSION SOT143R
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-03-10
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
Plastic surface mounted package; reverse pinning; leads
SOT343R
detail
scale
DIMENSIONS original dimensions) UNIT 0.25 0.10 1.35 1.15 1.15 0.45 0.15 0.23 0.13
OUTLINE VERSION SOT343R
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF1105; BF1105R; BF1105WR
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
NOTES
BF1105; BF1105R; BF1105WR
1997
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
NOTES
BF1105; BF1105R; BF1105WR
1997
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 9805 4455, Fax. 9805 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 1010, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 733, Fax. +375 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 211, Fax. +359 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Prags Boulevard 1919, DK-2300 COPENHAGEN Tel. 2636, Fax. 0044 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 615800, Fax. +358 61580920 France: Carnot, BP317, 92156 SURESNES Cedex, Tel. 6161, Fax. 6427 Germany: D-20097 HAMBURG, Tel. Fax. Greece: 25th March Street, 17778 TAVROS/ATHENS, Tel. 4894 339/239, Fax. 4814 Hungary: Austria India: Philips INDIA Ltd, Band Building, floor, 254-D, Annie Besant Road, Worli, MUMBAI 025, Tel. 8541, Fax. 0966 Indonesia: Singapore Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki 18053, AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 6752 2531, Fax. 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 6918, Fax. 6919 Singapore: Lorong Payoh, SINGAPORE 1231, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 7430 Johannesburg 2000, Tel. 5911, Fax. 5494 South America: Vicente Pinzon, 173, floor, 04547-130 PAULO, Brazil, Tel. 2333, Fax. 2382 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 2000, Fax. 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2686, Fax. 7730 Taiwan: Philips Semiconductors, Chien Rd., Sec. TAIPEI, Taiwan Tel. +886 2134 2865, Fax. +886 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Talatpasa Cad. 80640 Tel. 2770, Fax. 6707 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 344, Fax.+381
other countries apply Philips Semiconductors, International Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1997
Internet:
SCA56
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
117067/00/03/pp16
Date release: 1997
Document order number:
9397 03136

BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product sp

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