ADE-208-438 9th. Edition June 1997 Features on-resistance Capable
|
|
|
Top Searches for this datasheet
HAT2016R
ADE-208-438 9th. Edition June 1997 Features
on-resistance Capable gate drive drive current High density mounting
Outline
SOP-8
Source Gate Drain
MOS1
MOS2
HAT2016R
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS D(pulse) Tstg
Note2 Note3 Note1
Ratings +150
Unit
10µs, duty cycle Drive operation When using glass epoxy board (FR4 mm), Drive operation When using glass epoxy board (FR4 mm),
HAT2016R
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltege drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test Symbol V(BR)DSS V(BR)GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss d(on) d(off) 0.03 0.05 0.045 0.08 Unit 6.5A, Note4 6.5A, diF/ =20A/µs Test Conditions 10mA, ±100µA, ±16V, 10V, Note4 Note4 Note4 1MHz
HAT2016R
Main Characteristics
Power Temperature Derating Test Condition When using glass epoxy board (FR4 40x40x1.6 mm), Maximum Safe Operation Area
Channel Dissipation
Drain Current
(°C)
Ambient Temperature
Operation this area limited DS(on) 0.03 shot Pulse Drive Operation 0.01 Drain Source Voltage
Typical Output Characteristics Pulse Test
Note When using glass epoxy board (FR4 40x40x1.6
Typical Transfer Characteristics
Drain Current
Drain Source Voltage
Drain Current
Pulse Test Gate Source Voltage
HAT2016R
Drain Source Saturation Voltage Gate Source Voltage DS(on) Pulse Test Drain Source State Resistance DS(on) Static Drain Source State Resistance Drain Current Pulse Test
Drain Source Voltage
0.05 0.02 0.01
ID=5A
Gate Source Voltage
0.005
Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance |yfs|
Static Drain Source State Resistance Temperature 0.10 Pulse Test 0.08
Forward Transfer Admittance Drain Current
0.06
0.04 0.02
Pulse Test Drain Current
Case Temperature (°C)
HAT2016R
Body-Drain Diode Reverse Recovery Time Typical Capacitance Drain Source Voltage
Reverse Recovery Time (ns)
10000 3000 1000
Capacitance (pF)
Ciss Drain Source Voltage Coss Crss
di/dt A/µs 25°C Reverse Drain Current
Dynamic Input Characteristics Reverse Drain Current
Reverse Drain Current Souece Drain Voltage Pulse Test
Drain Source Voltage
Gate Source Voltage
Gate Charge (nc)
Source Drain Voltage
HAT2016R
1000 Switching Characteristics
duty Switching Time (ns)
d(off) d(on)
Drain Current
Switching Time Test Circuit Monitor D.U.T. Vout Monitor
Switching Time Waveform td(on) td(off)
Vout
HAT2016R
Normalized Transient Thermal Impedance Pulse Width Drive Operation) Normalized Transient Thermal Impedance
0.05
0.01
0.02 0.01
f(t) °C/W, When using glass epoxy board (FR4 40x40x1.6
0.001
0.0001
1000
1000
Pulse Width
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width Drive Operation)
0.05
0.01
0.02 0.01
f(t) °C/W, When using glass epoxy board (FR4 40x40x1.6
0.001
0.0001
1000
1000
Pulse Width
HAT2016R
Package Dimensions
Unit:
1.75
0.25
1.27 0.51 0.25 1.27
0.15 0.25 Hitachi code EIAJ JEDEC FP-8DA MS-012AA
HAT2016R
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica http:semiconductor.hitachi.com/ Europe Asia (Singapore) Asia (Taiwan) Asia (HongKong) Japan further information write
Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, 94005-1897 Tel: (800) 285-1601 Fax: (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office Hung Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> 2718-3666 Fax: <886> 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong Tel: <852> 9218 Fax: <852> 0281 Telex: 40815 HITEC
Copyright Hitachi, Ltd., 1998. rights reserved. Printed Japan.
Other recent searches
VQON20 - VQON20 VQON20 Datasheet
T7024 - T7024 T7024 Datasheet
T7026 - T7026 T7026 Datasheet
PC372 - PC372 PC372 Datasheet
MR27V801D - MR27V801D MR27V801D Datasheet
M32R - M32R M32R Datasheet
M32R-FPU - M32R-FPU M32R-FPU Datasheet
DR-75-24-4603 - DR-75-24-4603 DR-75-24-4603 Datasheet
CLC111 - CLC111 CLC111 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
