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ADE-208-663C 4th. Edition February 1999 Features Automotive Appli
Top Searches for this datasheetHAT1038R/HAT1038RJ ADE-208-663C 4th. Edition February 1999 Features Automotive Application Type Code on-resistance Capable gate drive High density mounting Outline SOP-8 Source Gate Drain MOS1 MOS2 HAT1038R/HAT1038RJ Absolute Maximum Ratings 25°C) Item Drain source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT1038R HAT1038RJ Avalanche energy HAT1038R HAT1038RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Tstg Note2 Note3 Symbol VDSS VGSS D(pulse) Note4 Note1 Ratings Unit Note4 1.05 duty cycle Drive operation When using glass epoxy board (FR4 mm), Drive operation When using glass epoxy board (FR4 mm), Value 25°C, HAT1038R/HAT1038RJ Electrical Characteristics 25°C) Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Zero gate voltage drain current HAT1038R Symbol V(BR)DSS V(BR)GSS 0.12 0.16 0.15 0.23 Unit Note5 diF/ 50A/µs Ta=125°C Note5 Note5 Note5 1MHz Test Conditions HAT1038RJ HAT1038R HAT1038RJ VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss d(on) d(off) Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test 0.98 1.28 HAT1038R/HAT1038RJ Main Characteristics Power Temperature Derating Test Condition When using glass epoxy board (FR4 40x40x1.6 mm), -100 Maximum Safe Operation Area Channel Dissipation Drain Current -0.3 -0.1 Operation this area limited DS(on) -0.03 -0.01 -0.1 -0.3 shot pulse -100 Ambient Temperature (°C) Drain Source Voltage Note When using glass epoxy board (FR4 40x40x1.6 Typical Output Characteristics -3.5 Pulse Test Typical Transfer Characteristics Pulse Test Drain Current Drain Current Gate Source Voltage -2.5 Drain Source Voltage HAT1038R/HAT1038RJ Drain Source Saturation Voltage Gate Source Voltage Static Drain Source State Resistance Drain Current Pulse Test Drain Source Saturation Voltage DS(on) Pulse Test -0.4 Drain Source State Resistance DS(on) -0.5 -0.3 -0.2 -0.1 -0.5 0.05 0.02 0.01 -0.1 -0.3 -100 Gate Source Voltage Drain Current Static Drain Source State Resistance DS(on) Forward Transfer Admittance Static Drain Source State Resistance Temperature Pulse Test -0.5 -0.5, Forward Transfer Admittance Drain Current Pulse Test Case Temperature (°C) -0.5 -0.1 -0.2 Drain Current HAT1038R/HAT1038RJ Body-Drain Diode Reverse Recovery Time 2000 1000 Ciss Crss Drain Source Voltage Coss Typical Capacitance Drain Source Voltage Reverse Recovery Time (ns) -0.1 -0.2 -0.5 Reverse Drain Current Capacitance (pF) Dynamic Input Characteristics -3.5 Switching Characteristics 1000 Switching Time (ns) -0.1 -0.2 duty d(off) Drain Source Voltage Gate Source Voltage d(on) -100 Gate Charge (nc) -0.5 Drain Current HAT1038R/HAT1038RJ Reverse Drain Current Source Drain Voltage Reverse Drain Current Repetive Avalanche Energy (mJ) Maximun Avalanche Energy Channel Temperature Derating -3.5 duty Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage Channel Temperature (°C) Avalanche Test Circuit Avalanche Waveform VDSS VDSS Monitor Monitor (BR)DSS Switching Time Test Circuit Switching Time Waveform Monitor D.U.T. Vout td(on) td(off) Vout Monitor HAT1038R/HAT1038RJ Normalized Transient Thermal Impedance Pulse Width Drive Operation) Normalized Transient Thermal Impedance 0.05 0.02 0.01 0.01 f(t) °C/W, When using glass epoxy board (FR4 40x40x1.6 0.001 0.0001 1000 10000 Pulse Width Normalized Transient Thermal Impedance Pulse Width Drive Operation) Normalized Transient Thermal Impedance 0.05 0.02 0.01 0.01 f(t) °C/W, When using glass epoxy board (FR4 40x40x1.6 0.001 0.0001 Pulse Width 1000 10000 HAT1038R/HAT1038RJ Package Dimensions Unit: 1.75 0.25 1.27 0.51 0.25 1.27 0.15 0.25 Hitachi code EIAJ JEDEC FP-8DA MS-012AA Cautions Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products. Hitachi, Ltd. Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 NorthAmerica http:semiconductor.hitachi.com/ Europe Asia (Singapore) Asia (Taiwan) Asia (HongKong) Japan further information write Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office Hung Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> 2718-3666 Fax: <886> 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong Tel: <852> 9218 Fax: <852> 0281 Telex: 40815 HITEC Copyright Hitachi, Ltd., 1999. rights reserved. Printed Japan. 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