ADE-208-532H 9th. Edition February 1999 Features on-resistance Ca

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ADE-208-532H 9th. Edition February 1999 Features on-resistance Ca

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HAT1033T
ADE-208-532H 9th. Edition February 1999 Features
on-resistance Capable gate drive drive current High density mounting
Outline
TSSOP-8
Drain Source Gate
HAT1033T
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Symbol VDSS VGSS D(pulse)
Note1
Ratings
Unit
Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Tstg
Note2
10µs, duty cycle When using glass epoxy board (FR4 mm),
Electrical Characteristics 25°C)
Item Drain source breakdow voltage Symbol V(BR)DSS 0.046 0.061 0.063 0.090 Unit Note3 diF/ A/µs Test Conditions Note3 Note3 Note3 1MHz
Gate source breakdown voltage V(BR)GSS Gate source leak current Zero gate voltege drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Pulse test VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss d(on) d(off)
0.81 1.06
HAT1033T
Main Characteristics
Power Temperature Derating -100 Test Condition When using glass epoxy board (FR4 40x40x1.6 mm),
Maximum Safe Operation Area
Channel Dissipation
-0.3 Operation this area -0.1 limited DS(on)
(°C)
Drain Current
-0.03 -0.01 shot pulse Ambient Temperature -100 -0.1 -0.3 Drain Source Voltage Note When using glass epoxy board (FR4
Typical Output Characteristics Typical Transfer Characteristics -2.5 Pulse Test
Drain Current
Drain Current
-1.5
Pulse Test Gate Source Voltage
Drain Source Voltage
HAT1033T
Drain Source Saturation Voltage Gate Source Voltage
Drain Source Saturation Voltage DS(on)
Pulse Test
Drain Source State Resistance DS(on)
-0.25
Static Drain Source State Resistance Drain Current Pulse Test -2.5
-0.2
-0.15
-0.1 -0.5 Gate Source Voltage
0.05
-0.05
0.02 0.01 -0.2
-0.5 Drain Current
Static Drain Source State Resistance DS(on)
Forward Transfer Admittance
Static Drain Source State Resistance Temperature 0.20 Pulse Test 0.16
Forward Transfer Admittance Drain Current
0.12 -2.5
-0.5
0.08
-0.2 Pulse Test -0.5 Drain Current
0.04
-0.5
Case Temperature (°C)
HAT1033T
Body-Drain Diode Reverse Recovery Time 10000 3000 1000 Crss Ciss Coss Typical Capacitance Drain Source Voltage
Reverse Recovery Time (ns)
Capacitance (pF)
-0.1 -0.2 -0.5 Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Switching Time (ns)
Switching Characteristics
d(off)
Drain Source Voltage
Gate Source Voltage
-0.1 -0.2
d(on) duty -0.5 Drain Current
-3.5 Gate Charge (nc)
HAT1033T
Reverse Drain Current Source Drain Voltage Pulse Test Reverse Drain Current
-0.4
-0.8
-1.2
-1.6
-2.0
Source Drain Voltage
Normalized Transient Thermal Impedance Pulse Width Normalized Transient Thermal Impedance
0.05
0.02 0.01
0.01
f(t) °C/W, When using glass epoxy board (FR4 40x40x1.6
0.001
0.0001
1000
10000
Pulse Width
HAT1033T
Switching Time Test Circuit Monitor D.U.T. Vout td(on) td(off) Vout Monitor Switching Time Waveform
HAT1033T
Package Dimensions
Unit:
3.00 4.40
1.10
6.40 0.20
0.17 0.05
0.07 +0.03 -0.04
0.65 0.10 0.22
+0.08 -0.07
0-8° 0.50 0.10
0.13
Hitachi code EIAJ JEDEC
TTP-8D
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica http:semiconductor.hitachi.com/ Europe Asia (Singapore) Asia (Taiwan) Asia (HongKong) Japan further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office Hung Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> 2718-3666 Fax: <886> 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong Tel: <852> 9218 Fax: <852> 0281 Telex: 40815 HITEC
Copyright Hitachi, Ltd., 1999. rights reserved. Printed Japan.

ADE-208-532H 9th. Edition February 1999 Features on-resistance Ca

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