BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product sp
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BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs
Product specification Supersedes data 1999 1999
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
FEATURES Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier Partly internal self-biasing circuit ensure good cross-modulation performance during good stabilization. APPLICATIONS applications with supply voltage, such television tuners professional communications equipment.
handbook, columns
BF1101; BF1101R; BF1101WR
PINNING DESCRIPTION source drain gate gate
view
MSB035
handbook, columns
BF1101R marking code: NCp.
Fig.2
Simplified outline (SOT143R).
fpage
DESCRIPTION Enhancement type N-channel field-effect transistor with source substrate interconnected. Integrated diodes between gates source protect against excessive input voltage surges. BF1101, BF1101R BF1101WR encapsulated SOT143B, SOT143R SOT343R plastic packages respectively.
view
MSB014
view
MSB842
BF1101 marking code: NDp.
BF1101WR marking code:
Fig.1
Simplified outline (SOT143B).
Fig.3
Simplified outline (SOT343R).
QUICK REFERENCE DATA SYMBOL Ptot Cig1-ss Crss Xmod PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance gate reverse transfer capacitance noise figure cross-modulation operating junction temperature CAUTION This product supplied anti-static packing prevent damage caused electrostatic discharge during transport handling. further information, refer Philips specs.: SNW-EQ-608, SNW-FQ-302A SNW-FQ-302B. 1999 input level CONDITIONS MIN. TYP. MAX. UNIT dBµV
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot Tstg Note temperature soldering point source lead. THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction soldering point PARAMETER drain-source voltage drain current gate current gate current total power dissipation storage temperature operating junction temperature note
BF1101; BF1101R; BF1101WR
CONDITIONS
MIN.
MAX. +150 +150
UNIT
VALUE
UNIT
MGL615
handbook, halfpage
Ptot (mW)
(°C)
Fig.4 Power derating curve.
1999
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)DSS PARAMETER drain-source breakdown voltage
BF1101; BF1101R; BF1101WR
CONDITIONS VG1-S VG2-S VG2-S IG1-S VG1-S IG2-S VG2-S IS-G1 VG1-S IS-G2 VG2-S VG1-S VG2-S note VG2-S VG1-S VG1-S VG2-S
MIN.
MAX.
UNIT
V(BR)G1-SS gate 1-source breakdown voltage V(BR)G2-SS gate 2-source breakdown voltage V(F)S-G1 V(F)S-G2 VG1-S (th) VG2-S (th) IDSX IG1-SS IG2-SS Note connects Fig.21. forward source-gate voltage forward source-gate voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current gate cut-off current gate cut-off current
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-ss Cig2-ss Coss Crss Xmod PARAMETER forward transfer admittance input capacitance gate input capacitance gate output capacitance noise figure cross-modulation MHz; input level AGC; MHz; funw MHz; note input level AGC; MHz; funw MHz; note Note Measured test circuit Fig.21. CONDITIONS pulsed; MIN. TYP. MAX. UNIT dBµV dBµV
reverse transfer capacitance
1999
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
MGS299
MGS300
handbook, halfpage
(mA)
VG2-S
handbook, halfpage
(mA)
VG1-S
VG1-S
VG2-S
Fig.5 Transfer characteristics; typical values.
Fig.6 Output characteristics; typical values.
MGS301
handbook, halfpage
(µA)
VG2-S
handbook, halfpage
MGS302
(mS)
VG2-S
VG1-S
(mA)
Fig.7
Gate current function gate voltage; typical values.
Fig.8
Forward transfer admittance function drain current; typical values.
1999
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
MGS303
handbook, halfpage
handbook, halfpage
MGS304
(mA)
(mA)
(µA)
VG2-S
VG2-S (connected VGG); Fig.21.
Fig.9
Drain current function gate current; typical values.
Fig.10 Drain current function gate supply voltage VGG); typical values.
MGS305
handbook, halfpage
(mA)
handbook, halfpage
MGS306
(mA)
VG2-S
VG2-S connected VGG; Fig.21.
(connected VGG); Fig.21.
Fig.11 Drain current function gate VGG) drain supply voltage; typical values.
Fig.12 Drain current function gate voltage; typical values.
1999
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
handbook, halfpage
MGS307
MGS308
handbook, halfpage
(µA)
gain reduction (dB)
VG2-S
VAGC
(connected VGG); Fig.21.
MHz; Tamb
Fig.13 Gate current function gate voltage; typical values.
Fig.14 Typical gain reduction function voltage; Fig.21.
MGS309
MGS310
handbook, halfpage
handbook, halfpage
Vunw (dBµV)
(mA)
gain reduction (dB)
gain reduction (dB)
MHz; funw MHz; Tamb
MHz; Tamb
Fig.15 Unwanted voltage cross-modulation function gain reduction; typical values; Fig.21.
Fig.16 Drain current function gain reduction; typical values; Fig.21.
1999
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
handbook, halfpage (mS)
MGS311
handbook, halfpage |yrs (mS)
MGS312
-102 (deg)
|yrs|
(MHz)
(MHz)
Tamb
Tamb
Fig.17 Input admittance function frequency; typical values.
Fig.18 Reverse transfer admittance phase function frequency; typical values.
handbook, halfpage |yfs (mS)
MGS313
-102 (deg)
handbook, halfpage
MGS314
(mS)
(MHz) (MHz)
Tamb
Tamb
Fig.19 Forward transfer admittance phase function frequency; typical values.
Fig.20 Output admittance function frequency; typical values.
1999
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
handbook, full pagewidth
VAGC
RGEN
MGS315
Fig.21 Cross-modulation test set-up.
Table (MHz) 1000 Table
Scattering parameters: VG2-S Tamb MAGNITUDE (ratio) 0.987 0.985 0.976 0.963 0.949 0.933 0.916 0.897 0.877 0.856 0.832 ANGLE (deg) -4.1 -8.1 -16.1 -23.9 -31.6 -38.8 -45.7 -52.2 -58.4 -64.5 -70.3 MAGNITUDE (ratio) 2.922 2.908 2.875 2.820 2.762 2.665 2.591 2.498 2.410 2.318 2.214 ANGLE (deg) 175.0 170.3 160.8 157.6 142.6 134.1 125.7 117.7 109.6 101.6 94.2 MAGNITUDE (ratio) 0.001 0.001 0.003 0.004 0.005 0.005 0.005 0.006 0.005 0.006 0.006 ANGLE (deg) 87.6 86.1 83.3 80.4 78.2 77.8 78.9 81.8 89.1 97.1 110.4 MAGNITUDE (ratio) 0.990 0.989 0.985 0.982 0.977 0.972 0.967 0.961 0.957 0.950 0.946 ANGLE (deg) -2.2 -4.3 -8.5 -12.6 -16.8 -20.8 -24.7 -28.5 -32.2 -35.8 -39.6
Noise data: VG2-S Tamb (MHz) Fmin (dB) (ratio) 0.715 (deg) 58.3 37.85
1999
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
PACKAGE OUTLINES Plastic surface mounted package; leads
BF1101; BF1101R; BF1101WR
SOT143B
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT143B
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
Plastic surface mounted package; reverse pinning; leads
SOT143R
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.55 0.25 0.45 0.25
OUTLINE VERSION SOT143R
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-03-10
1999
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
Plastic surface mounted package; reverse pinning; leads
SOT343R
detail
scale
DIMENSIONS original dimensions) UNIT 0.25 0.10 1.35 1.15 1.15 0.45 0.15 0.23 0.13
OUTLINE VERSION SOT343R
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
1999
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF1101; BF1101R; BF1101WR
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1999
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
NOTES
BF1101; BF1101R; BF1101WR
1999
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
NOTES
BF1101; BF1101R; BF1101WR
1999
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 9805 4455, Fax. 9805 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 1248, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 0733, Fax. +375 0773 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 9211, Fax. +359 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381, Fax. 0087 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Sydhavnsgade 1780 COPENHAGEN Tel. 3333, Fax. 3905 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 800, Fax. +358 6158 0920 France: Carnot, BP317, 92156 SURESNES Cedex, Tel. 4099 6161, Fax. 4099 6427 Germany: D-20097 HAMBURG, Tel. 2353 Fax. 2353 6300 Hungary: Austria India: Philips INDIA Ltd, Band Building, floor, 254-D, Annie Besant Road, Worli, MUMBAI 025, Tel. 8541, Fax. 0966 Indonesia: Philips Development Corporation, Semiconductors Division, Gedung Philips, Buncit Raya Kav.99-100, JAKARTA 12510, Tel. 0040 ext. 2501, Fax. 0080 Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki 18053, AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 2531, Fax. 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381, +9-5 0087 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Pakistan: Singapore Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 6918, Fax. 6919 Singapore: Lorong Payoh, SINGAPORE 319762, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 58088 Newville 2114, Tel. 5401, Fax. 5398 South America: Vicente Pinzon, 173, floor, 04547-130 PAULO, Brazil, Tel. 2333, Fax. 2382 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 5985 2000, Fax. 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2741 Fax. 3263 Taiwan: Philips Semiconductors, Chien Rd., Sec. TAIPEI, Taiwan Tel. +886 2134 2886, Fax. +886 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. 81260 Umraniye, ISTANBUL, Tel. 1500, Fax. 1813 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381, Fax. 0087 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 5344, Fax.+381 5777
other countries apply Philips Semiconductors, International Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1999
Internet:
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
125004/00/02/pp16
Date release: 1999
Document order number:
9397 05993
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