BF1100WR Dual-gate MOS-FET Product specification File under Discr
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BF1100WR Dual-gate MOS-FET
Product specification File under Discrete Semiconductors, SC07 1995
Philips Semiconductors
Philips Semiconductors
Product specification
Dual-gate MOS-FET
FEATURES Specially designed supply voltage Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier Superior cross-modulation performance during AGC. APPLICATIONS applications such television tuners professional communications equipment. DESCRIPTION Enhancement type field-effect transistor plastic microminiature SOT343R package. transistor consists amplifier MOS-FET with source substrate interconnected internal bias circuit ensure good cross-modulation performance during AGC. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
Marking code:
handbook, halfpage
BF1100WR
PINNING SYMBOL source drain gate gate DESCRIPTION
view
MAM192
Fig.1 Simplified outline (SOT343R) symbol.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s drain current total power dissipation operating junction temperature forward transfer admittance input capacitance gate reverse transfer capacitance noise figure PARAMETER drain-source voltage CONDITIONS MIN. TYP. MAX. UNIT
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FET
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot Tstg Note Device mounted printed-circuit board. PARAMETER drain-source voltage drain current gate current gate current total power dissipation storage temperature operating junction temperature Fig.2; Tamb note CONDITIONS MIN.
BF1100WR
MAX. +150 +150
UNIT
MLD180
MLD156
handbook, halfpage
(mS)
Ptot (mW)
Tamb
Fig.3 Fig.2 Power derating curve.
Forward transfer admittance function junction temperature; typical values.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FET
THERMAL CHARACTERISTICS SYMBOL Notes Device mounted printed-circuit board. temperature soldering point source lead. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(F)S-G1 V(F)S-G2 VG1-S(th) PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage forward source-gate voltage forward source-gate voltage gate 1-source threshold voltage CONDITIONS VG2-S IG1-S VG1-S IG2-S VG2-S IS-G1 VG1-S IS-G2 VG2-S VG2-S VG2-S(th) gate 2-source threshold voltage VG1-S VG1-S IDSX drain-source current VG2-S note VG2-S note IG1-SS IG2-SS Notes connects gate Fig.26. connects gate Fig.26. gate cut-off current gate cut-off current VG2-S VG1-S VG1-S VG2-S MIN. 13.2 13.2 PARAMETER thermal resistance from junction ambient thermal resistance from junction soldering point CONDITIONS note note
BF1100WR
VALUE
UNIT
MAX.
UNIT
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FET
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL PARAMETER forward transfer admittance CONDITIONS pulsed; Cig1-s input capacitance gate Cig2-s input capacitance gate drain-source capacitance reverse transfer capacitance noise figure MHz; GSopt; BSopt MIN. TYP.
BF1100WR
MAX.
UNIT
MLD157
handbook, halfpage gain
handbook, halfpage
MLD158
reduction (dB)
Vunw (dBµV)
VAGC
gain reduction (dB)
MHz.
MHz; funw MHz; Tamb
Fig.5 Fig.4 Gain reduction function voltage; typical values.
Unwanted voltage cross-modulation function gain reduction; typical values; Fig.26.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FET
BF1100WR
MLD159
handbook, halfpage
handbook, halfpage
MLD160
(mA)
(mA)
VG2-S
Fig.6 Output characteristics; typical values.
Fig.7 Transfer characteristics; typical values.
handbook, halfpage
MLD161
MLD162
(µA)
handbook, halfpage
(mS)
(mA)
Fig.8
Gate current function gate voltage; typical values.
Fig.9
Forward transfer admittance function drain current; typical values.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FET
BF1100WR
handbook, halfpage
MLD163
MLD164
handbook, halfpage
(mA)
(mA)
(µA)
VG2-S
VG2-S connected VGG.
Fig.10 Drain current function gate current; typical values.
Fig.11 Drain current function gate supply voltage VGG) drain supply voltage; typical values; Fig.26.
handbook, halfpage
MLD165
handbook, halfpage
MLD166
(mA)
(mA)
VG2-S (connected VGG);
VG2-S (connected VGG);
Fig.12 Drain current function gate voltage VGG); typical values; Fig.26. 1995
Fig.13 Drain current function gate voltage VGG); typical values; Fig.26.
Philips Semiconductors
Product specification
Dual-gate MOS-FET
BF1100WR
handbook, halfpage
MLD167
(µA)
handbook, halfpage
MLD168
(µA)
(connected VGG);
(connected VGG);
Fig.14 Gate current function gate voltage; typical values.
Fig.15 Gate current function gate voltage; typical values.
MLD169
MLD170
handbook, halfpage
handbook, halfpage
(mA)
(mA)
(connected VGG);
(connected VGG);
Fig.16 Drain current function gate voltage; typical values; Fig.26.
Fig.17 Drain current function gate voltage; typical values; Fig.26.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FET
BF1100WR
handbook, halfpage (mS)
MLD181
(µS)
MLD182
(deg)
(MHz)
(MHz)
Tamb
Tamb
Fig.18 Input admittance function frequency; typical values.
Fig.19 Reverse transfer admittance phase function frequency; typical values.
MLD183
MLD184
handbook, halfpage (mS)
(mS)
(deg)
(MHz)
(MHz)
Tamb
Tamb
Fig.20 Forward transfer admittance phase function frequency; typical values.
Fig.21 Output admittance function frequency; typical values.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FET
BF1100WR
handbook, halfpage (mS)
MLD185
(µS)
MLD186
(deg)
(MHz)
(MHz)
Tamb
Tamb
Fig.22 Input admittance function frequency; typical values.
Fig.23 Reverse transfer admittance phase function frequency; typical values.
MLD187
MLD188
handbook, halfpage
(mS)
(deg)
(mS)
(MHz)
(MHz)
Tamb
Tamb
Fig.24 Forward transfer admittance phase function frequency; typical values.
Fig.25 Output admittance function frequency; typical values.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FET
BF1100WR
handbook, full pagewidth
VAGC
MGC420
Fig.26 Cross-modulation test circuit.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FET
Table (MHz) 1000 Table Scattering parameters: VG2-S MAGNITUDE (ratio) 0.985 0.981 0.975 0.965 0.947 0.927 0.913 0.890 0.869 0.845 0.823 ANGLE (deg) -3.9 -7.3 -14.4 -21.6 -28.3 -34.9 -41.7 -47.9 -54.0 -59.7 -65.4 MAGNITUDE (ratio) 2.618 2.602 2.577 2.555 2.513 2.449 2.339 2.361 2.302 2.228 2.167 ANGLE (deg) 175.1 170.5 160.7 151.6 141.8 133.4 124.6 115.4 106.4 97.6 89.6 MAGNITUDE (ratio) 0.001 0.001 0.002 0.002 0.003 0.003 0.003 0.003 0.003 0.003 0.003 ANGLE (deg) 137.9 80.4 74.0 79.3 80.5 82.8 78.9 80.6 93.9 104.8 129.3
BF1100WR
MAGNITUDE (ratio) 1.000 0.999 0.995 0.994 0.992 0.988 0.984 0.982 0.979 0.976 0.974 ANGLE (deg) -1.9 -4.0 -7.6 -11.3 -15.0 -18.5 -22.0 -25.3 -28.8 -32.1 -35.5
Noise data: VG2-S (MHz) Fmin (dB) 2.00 (ratio) 0.67 (deg) 43.9 0.89
Table (MHz) 1000 Table
Scattering parameters: VG2-S MAGNITUDE (ratio) 0.985 0.980 0.973 0.962 0.946 0.929 0.912 0.895 0.868 0.845 0.823 ANGLE (deg) -3.7 -7.4 -14.6 -21.5 -28.5 -35.0 -41.6 -47.8 -53.8 -59.8 -65.7 MAGNITUDE (ratio) 2.576 2.563 2.541 2.519 2.479 2.419 2.373 2.336 2.284 2.213 2.160 ANGLE (deg) 175.3 170.9 161.6 152.9 143.5 135.5 127.2 118.7 110.0 101.6 94.1 MAGNITUDE (ratio) 0.000 0.001 0.002 0.002 0.003 0.003 0.003 0.003 0.003 0.003 0.003 ANGLE (deg) 125.0 111.2 83.0 85.2 79.4 78.2 80.0 83.4 91.3 95.9 112.2 MAGNITUDE (ratio) 1.000 1.000 0.997 0.996 0.995 0.991 0.989 0.987 0.985 0.983 0.981 ANGLE (deg) -1.6 -3.3 -6.4 -9.3 -12.4 -15.3 -18.1 -20.9 -23.7 -26.5 -29.3
Noise data: VG2-S (MHz) Fmin (dB) 2.00 (ratio) 0.66 (deg) 43.3 0.97
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FET
PACKAGE OUTLINE
BF1100WR
1.00
1.35 1.15
0.25 0.10
MSB367
Dimensions
Fig.27 SOT343R.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FET
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF1100WR
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1995
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