BF1100; BF1100R Dual-gate MOS-FETs Product specification File und
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BF1100; BF1100R Dual-gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 1995
Philips Semiconductors
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
FEATURES Specially designed supply voltage Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier Superior cross-modulation performance during AGC. APPLICATIONS applications such television tuners professional communications equipment. DESCRIPTION Enhancement type field-effect transistor plastic microminiature SOT143 SOT143R package. transistor consists amplifier MOS-FET with source
BF1100; BF1100R
substrate interconnected internal bias circuit ensure good cross-modulation performance during AGC. CAUTION device supplied antistatic package. gate-source input must protected against static discharge during transport handling.
PINNING SYMBOL source drain gate gate DESCRIPTION
handbook, halfpage
handbook, halfpage
view
MAM125
MAM124
view
BF1100 marking code: M56.
BF1100R marking code: M57.
Fig.1 Simplified outline (SOT143) symbol.
Fig.2 Simplified outline (SOT143R) symbol.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s 1995 drain current total power dissipation operating junction temperature forward transfer admittance input capacitance gate reverse transfer capacitance noise figure PARAMETER drain-source voltage CONDITIONS MIN. TYP. MAX. UNIT
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL Ptot PARAMETER drain-source voltage drain current gate current gate current total power dissipation BF1100 BF1100R Tstg Note Device mounted printed-circuit board. storage temperature operating junction temperature Fig.3 Tamb note Tamb note CONDITIONS
BF1100; BF1100R
MIN.
MAX. +150 +150
UNIT
MLD155
MLD156
handbook, halfpage
(mS)
Ptot (mW)
BF1100R BF1100
Tamb
Fig.4 Fig.3 Power derating curves.
Forward transfer admittance function junction temperature; typical values.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
THERMAL CHARACTERISTICS SYMBOL BF1100 BF1100R thermal resistance from junction soldering point BF1100 BF1100R Notes Device mounted printed-circuit board. temperature soldering point source lead. STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(F)S-G1 V(F)S-G2 VG1-S(th) PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage forward source-gate voltage forward source-gate voltage gate 1-source threshold voltage CONDITIONS VG2-S IG1-S VG1-S IG2-S VG2-S IS-G1 VG1-S IS-G2 VG2-S VG2-S VG2-S(th) gate 2-source threshold voltage VG1-S VG1-S IDSX drain-source current VG2-S note VG2-S note IG1-SS IG2-SS Notes connects gate Fig.27. connects gate Fig.27. gate cut-off current gate cut-off current VG2-S VG1-S VG1-S VG2-S note PARAMETER thermal resistance from junction ambient CONDITIONS note
BF1100; BF1100R
VALUE
UNIT
MIN. 13.2 13.2
MAX.
UNIT
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL PARAMETER forward transfer admittance CONDITIONS pulsed; Cig1-s input capacitance gate Cig2-s input capacitance gate drain-source capacitance reverse transfer capacitance noise figure MHz; GSopt; BSopt
BF1100; BF1100R
MIN.
TYP.
MAX.
UNIT
MLD157
handbook, halfpage gain
handbook, halfpage
MLD158
reduction (dB)
Vunw (dBµV)
VAGC
gain reduction (dB)
MHz. MHz; funw MHz; Tamb
Fig.6 Fig.5 Gain reduction function voltage; typical values.
Unwanted voltage cross-modulation function gain reduction; typical values; Fig.27.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
MLD159
handbook, halfpage
handbook, halfpage
MLD160
(mA)
(mA)
VG2-S
Fig.7 Output characteristics; typical values.
Fig.8 Transfer characteristics; typical values.
handbook, halfpage
MLD161
MLD162
(µA)
handbook, halfpage
(mS)
(mA)
Fig.9
Gate current function gate voltage; typical values.
Fig.10 Forward transfer admittance function drain current; typical values.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
handbook, halfpage
MLD163
MLD164
handbook, halfpage
(mA)
(mA)
(µA)
VG2-S
VG2-S connected VGG.
Fig.11 Drain current function gate current; typical values.
Fig.12 Drain current function gate supply voltage VGG) drain supply voltage; typical values; Fig.27.
handbook, halfpage
MLD165
handbook, halfpage
MLD166
(mA)
(mA)
VG2-S (connected VGG);
VG2-S (connected VGG);
Fig.13 Drain current function gate voltage VGG); typical values; Fig.27. 1995
Fig.14 Drain current function gate voltage; VGG); typical values; Fig.27.
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
handbook, halfpage
MLD167
(µA)
handbook, halfpage
MLD168
(µA)
(connected VGG).
(connected VGG).
Fig.15 Gate current function gate voltage; typical values.
Fig.16 Gate current function gate voltage; typical values.
MLD169
MLD170
handbook, halfpage
handbook, halfpage
(mA)
(mA)
(connected VGG).
(connected VGG).
Fig.17 Drain current function gate voltage; typical values; Fig.27.
Fig.18 Drain current function gate voltage; typical values; Fig.27.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
handbook, halfpage (mS)
MLD172
(µS)
MLD173
(deg)
(MHz)
(MHz)
Tamb
Tamb
Fig.19 Input admittance function frequency; typical values.
Fig.20 Reverse transfer admittance phase function frequency; typical values.
MLD174
MLD175
handbook, halfpage
(mS)
(deg)
(mS)
(MHz)
(MHz)
Tamb
Tamb
Fig.21 Forward transfer admittance phase function frequency; typical values.
Fig.22 Output admittance function frequency; typical values.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
handbook, halfpage (mS)
MLD176
(µS)
MLD177
(deg)
(MHz)
(MHz)
Tamb
Tamb
Fig.23 Input admittance function frequency; typical values.
Fig.24 Reverse transfer admittance phase function frequency; typical values.
MLD178
MLD179
handbook, halfpage
(mS)
(deg)
(mS)
(MHz)
(MHz)
Tamb
Tamb
Fig.25 Forward transfer admittance phase function frequency; typical values.
Fig.26 Output admittance function frequency; typical values.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
handbook, full pagewidth
VAGC
MGC420
Fig.27 Cross-modulation test set-up.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
Table (MHz) 1000 Table Scattering parameters: VG2-S MAGNITUDE (ratio) 0.986 0.983 0.974 0.960 0.953 0.933 0.915 0.895 0.880 0.864 0.839 ANGLE (deg) -3.6 -7.4 -14.7 -21.8 -28.7 -35.4 -42.0 -47.9 -53.5 -59.6 -65.0 MAGNITUDE (ratio) 2.528 2.531 2.490 2.446 2.412 2.341 2.283 2.205 2.146 2.087 1.998 ANGLE (deg) 174.4 169.8 159.5 149.8 139.8 130.1 120.4 111.6 102.9 93.4 84.4 MAGNITUDE (ratio) 0.001 0.001 0.002 0.002 0.003 0.003 0.004 0.003 0.003 0.003 0.003
BF1100; BF1100R
ANGLE (deg) 63.7 80.7 81.0 80.3 76.3 76.5 79.0 81.5 90.8 106.6 135.4 MAGNITUDE (ratio) 1.000 1.000 0.996 0.994 0.992 0.987 0.984 0.981 0.978 0.974 0.971 ANGLE (deg) -2.0 -4.2 -8.1 -11.9 -15.7 -19.4 -23.0 -26.7 -30.3 -33.9 -37.6
Noise data: VG2-S (MHz) Fmin (dB) 2.00 (ratio) 0.67 (deg) 43.9 0.89
Table (MHz) 1000 Table
Scattering parameters: VG2-S MAGNITUDE (ratio) 0.986 0.984 0.974 0.960 0.953 0.933 0.915 0.894 0.879 0.863 0.838 ANGLE (deg) -3.7 -7.4 -14.6 -21.8 -28.7 -35.3 -41.9 -47.8 -53.5 -59.5 -65.0 MAGNITUDE (ratio) 2.478 2.480 2.440 2.400 2.371 2.306 2.255 2.183 2.131 2.080 1.999 ANGLE (deg) 174.7 170.3 160.6 151.4 141.9 132.7 123.6 115.3 107.2 98.2 89.7 MAGNITUDE (ratio) 0.001 0.001 0.002 0.002 0.003 0.003 0.004 0.004 0.003 0.003 0.003 ANGLE (deg) 72.2 80.9 82.7 79.9 77.7 77.1 77.1 79.3 83.9 95.1 115.8 MAGNITUDE (ratio) 1.000 1.000 0.997 0.996 0.994 0.991 0.989 0.986 0.984 0.982 0.980 ANGLE (deg) -1.6 -3.5 -6.6 -9.7 -12.8 -15.8 -18.7 -21.7 -24.6 -27.5 -30.4
Noise data: VG2-S (MHz) Fmin (dB) 2.00 (ratio) 0.66 (deg) 43.3 0.97
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
PACKAGE OUTLINES
BF1100; BF1100R
handbook, full pagewidth
0.75 0.60
0.150 0.090
0.88
0.48
MBC845
VIEW
Dimensions
Fig.28 SOT143.
handbook, full pagewidth
0.40 0.25
0.150 0.090
0.48 0.38
0.88 0.78
MBC844
VIEW
Dimensions
Fig.29 SOT143R.
1995
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF1100; BF1100R
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1995
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