CYPRESS TECHNICAL CONTACT QUALIFICATION DATA: PRODUCT DESCRIPTION

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CYPRESS TECHNICAL CONTACT QUALIFICATION DATA: PRODUCT DESCRIPTION

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PROM FAB2 QUALIFICATION MARKETING PART NUMBER 7C258 7C259 DEVICE DESCRIPTION Reprogrammable State Machine PROM Reprogrammable State Machine PROM
CYPRESS TECHNICAL CONTACT QUALIFICATION DATA:
PRODUCT DESCRIPTION (for qualification)
Information provided this document intended generic qualification technically describes Cypress part supplied: Marketing Part Device Description Cypress Division: Size (stepping): CY7C258/259 PROM Cypress Semiconductor Corporation mils mils What markings Die: 7C258/9A Oct/1992
Overall Mask) Level (pre-requisite qualification): Cypress Qualification completion/Marketing Availability Dates (Current REV):
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number Metal Layers: Passivation Type Materials: Free Phosphorus contents glass layer(%): Coating(s), used: Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process None CMOS, Double Poly, Metal 0.8µm SiO2 195A Cypress Semiconductor, Round Rock, (Fab PLD20DJ Generic Process Technology/Design Rule (µ-drawn): Metal Composition: Metal 1%SiAl, Metal SiAl None
4,000A 15,000A Oxynitride
CYPRESS SEMICONDUCTOR PAGE
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Assembly Line Process Name/Location Assembly (prime) facility: Epoxy Thermocompression Copper Solder Dipped, 63%Sn, 37%Pb Silver Attach Dim: Attach Material: Wire Material/Size: Cypress Semiconductor mils mils Silver Epoxy Gold 28-pin, 300-mil Plastic mils side Sumitomo EME-6300H(R)
Cypress Semiconductor, Jose,
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Assembly Line Process Name/Location Assembly (prime) facility: Epoxy Thermocompression Copper Solder Dipped, 63%Sn, 37%Pb Silver Attach Dim: Attach Material: Wire Material/Size: Cypress Semiconductor mils mils Silver Epoxy Gold 28-pin PLCC mils side Sumitomo EME-6300H(R)
Cypress Semiconductor, Jose,
HERMETIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Name/Location Assembly (prime) facility: Assembly Line Process Paste Ultrasonic Alloy Solder Dipped, 63%Sn, 37%Pb Silver Attach Dim: Attach Material: Wire Material/Size: Cypress Semiconductor mils mils Silver Glass Aluminum 1.25 28-pins, mils Windowed CerDIP mils side
Cypress Semiconductor, Jose,
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OTHER INFORMATION
approval similarity, identify other devices using same basic with bonding metal mask options test selections explain:
Cypress planning changes near future, identify change (Qtr/Yr) Design Rev./Shrink: Fab/Assembly site change: Other Devices qualified this technology: Other Packages qualified this device: Voltage Rating (per STD-008, Method 3018): Flammability Classification (UL-94V): Alternate Fab/Assembly Locations: None Assembly Annam, Korea Annam, Manila Omedata LCC, Cerdip(7C258),Windowed Leaded Chip Carrier, >2,000V Process Change: Cross Licensee/Licensor:
Please attach following Qualification Reliability data revision Package type, assembly sites identified above (mark included): HAST (5.5V, 130°C, 85%RH, 15psig) Temperature Cycles (-65°C 150°C) Data Retention Bake, Plastic (165°C) Data Retention Bake, Hermetic (250°C) Autoclave (PCT, 121°C, 100%RH) Tests (MIL-STD 883, method 3015) Operating Life (temp): Latchup Testing Steady State Life (HTSSL, 5.75V, 150°C) Temperature Humidity Bias (5.5V, 85°C, 85%RH) Other: Other: Temperature Cycle (-40°C 125°C) Alpha Particle Sensitivity 125C/150°C
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PRODUCT INFORMATION QUALIFICATION SIMILARITY
Product Family: Division: 7C258/259 PROM Cypress Semiconductor Size/ Type Revision Size (stepping) Design Rule Fabrication Passivation Mold Assembly Volt Type Compound Line Rating Location Availability (mm/yy)
Supplier's Part Number Rated Speed
Process Line CY7C258 -**DC 28.3 CDIP 0.8µ CMOS Oxynitride Oxynitride Oxynitride Oxynitride Oxynitride Oxynitride Oxynitride Sumitomo Hysol Sumitomo Hysol Sumitomo Hysol Sumitomo Hysol Sumitomo Hysol Sumitomo Hysol Sumitomo Hysol Jose, Jose, Jose, Jose, Jose, Jose, Jose, >2,000V >2,000V >2,000V >2,000V >2,000V >2,000V >2,000V
CY7C258 -**HC/HMB CY7C259 CY7C258 -**JC CY7C259 CY7C258 -**PC
28-pin WHLCC 44-pin WHLCC 28-pin PLCC 44-pin PLCC 28.3 PDIP
0.8µ
CMOS
0.8µ
CMOS
0.8µ
CMOS
CY7C258 -*WC/WMB
28.3 WCDIP
0.8µ
CMOS
CY7C258 -**QMB CY7C259 CY7C258 -**LMB CY7C259
28-pin WLCC 44-pin WLCC 28-pin 44-pin
0.8µ
CMOS
0.8µ
CMOS
CYPRESS SEMICONDUCTOR PAGE
DEVICE RELIABILITY SUMMARY
Marketing Part: Description: CY7C258/259 28-pin, 300-mil PDIP, 28-pin PLCC, 28-pin, 300-mil Windowed CDIP Wafer Fab: Assembly: Round Rock Cypress Jose,
High Temperature Dynamic Operating Life (HTOL, 5.75V, 125°C) Early Failure Rate Device 7C258 Lot# 2211210 Hours 0/445 Cumulative 0/445
High Temperature Dynamic Operating Life (HTOL, 5.75V, 125°C) Latent Failure Rate Device 7C258 Lot# 2211210 Hours 0/445 1000 Hours 0/445 Cumulative 0/445
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Latent Failure Rate Device 7C258 Lot# 2211210 Hours 0/418 Hours 0/415 Cumulative 0/415
Group Subgroup Life Test (HTOL, 5.75V, 150°C) Device 7C258 Lot# 2214439 Hours 0/80 High Temperature Steady State Life Test (HTSSL, 5.75V, 150°C) Device 7C258 7C258 Lot# 2211210 2214439 Hours 0/129 Hours 0/129 0/76 336Hours 0/129 Cumulative 0/205 Cumulative 0/80
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Data Retention Bake, Plastic Packaged Devices bias, 185°C) Device 7C258 Lot# 2211210 Hours 0/76 Data Retention Bake, Hermetic Packaged Devices bias, 250°C) Device 7C258 Lot# 2214439 Hours 0/76 Hours 0/76 1000 Hours 0/76 Cumulative 0/76 Hours Cumulative 0/76
Temperature Cycle (Condition -65°C 150°C) Device 7C258 Lot# 2214439 Cycles 0/45 1000 Cycles 0/45 Cumulative 0/45
Temperature Cycle (Condition -40°C 125°C) Device 7C258 Lot# 2211210 Cycles 0/46 1000 Cycles 0/46 Cumulative 0/46
Autoclave (PCT, bias, 121°C, 100%RH, 15psig) Device 7C258 Lot# 2211210 Hours 0/45 Hours 0/45 Cumulative 0/45
High Accelerated Saturation Test (HAST, 5.5V, 130°C, 85%RH, 15psig) Device 7C258 Lot# 2211210 Hours 0/47 Cumulative 0/47
CYPRESS SEMICONDUCTOR PAGE
Device Reliability Summary
92114 92461 CY7C258/259 Electrostatic Discharge Human Body Model Circuit 883, Method 3015 >+2,000V Unit >-2,000V >+2,000V Unit >-2,000V >+2,000V Unit >-2,000V (Highest passing voltage, +10% Guard-banded)
Latchup Testing Cypress Internal Latch-up Procedure Tests: Current Injection 200mA Trigger Socket Oscillation 7.5V 1MHz Temp 150°C
CYPRESS SEMICONDUCTOR PAGE
CYPRESS QUALIFICATION REPORT
Marketing Part: Status: Complete Date: Prod. Family: Results: Mask Rate (FITs):
Process
Technology:
Process Loc:
Package: Attach Mat:
Mold Compound: Package Loc:
Lead Frame: Test Loc:
Cypress Test
Stress/Test
Reference Method Temp/Bias
Actual Conditions
Status SS/Fail
Qualification Data Reference
Test Result
Hrs/Cyc
Pass
Fail
HTOL EFR/LFR High Temp. Bake/DRET HAST Steam Test/Autoclave/PCT Temperature Cycle Thermal Shock Accelerated Soft Error Rate System Soft Error Rate
Mechanical Sequence X-Ray ESD-HBM ESD-CDM Latch-up Flammability Oxygen Index Moisture Resistance Internal Water Vapor Solvent Resistance Internal Visual Physical Dimensions Solderability Lead Integrity Bond Strength Shear Strength Torque Corner Pins Corner Pins Internal Pins Internal Pins
Interim, Complete

CYPRESS TECHNICAL CONTACT QUALIFICATION DATA: PRODUCT DESCRIPTION

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