PRODUCT DESCRIPTION (for qualification) Information provided this
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BiCMOS CACHE SRAMS MARKETING PART NUMBER CY7B180 CY7B181 DEVICE DESCRIPTION Cache Cache
PRODUCT DESCRIPTION (for qualification)
Information provided this document intended generic qualification technically describes Cypress part supplied: Marketing Part Device Description: Cypress Division: Size (stepping): CY7B180/181 BiCMOS Cach SRAM ASPEN 7B180A/7B181A Dec/1992 mils mils What markings Die:
Overall Mask) Level (pre-requisite qualification): Cypress Qualification completion/Marketing Availability Dates (Current REV):
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number Metal Layers: Passivation Type Materials: Free Phosphorus contents glass layer(%): Coating(s), used: Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process Plastic: Silicon BiCMOS, Double Poly, Double Metal /0.8 SiO2 /195A Cypress Semiconductor, Jose, Generic Process Technology/Design Rule (µ-drawn): Metal Composition: Metal TiW, 1%SiAl, Metal 1%SiAl
4,000A 15,000A Oxynitride
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Assembly Line Process Name/Location Assembly (prime) facility: Epoxy Thermocompression Copper Solder Dipped, 63%Sn, 37%Pb Silver Attach Dim: Attach Material: Wire Material/Size: Anam, Korea Anam, Korea mils mils Silver Epoxy Gold 68-pin PLCC mils side Sumitomo EME-6300H(R)
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OTHER INFORMATION
approval similarity, identify other devices using same basic with bonding metal mask options test selections explain:
Cypress planning changes near future, identify change (Qtr/Yr) Design Rev./Shrink: Fab/Assembly site change: Fab2 /Q393 Other Devices qualified this technology: Other Packages qualified this device: Voltage Rating (per STD-008, Method 3018): Flammability Classification (UL-94V): Alternate Fab/Assembly Locations: None Assembly Alphatec (PLCC) Plastic Quad Flat Pack >2,000V Process Change: Cross Licensee/Licensor:
Please attach following Qualification Reliability data revision Package type, assembly sites identified above (mark included): HAST (5.5V, 130°C, 85%RH, 15psig) Temperature Cycles (-40°C 125°C) Data Retention Bake, Plastic (165°C) Data Retention Bake, Hermetic (250°C) Autoclave (PCT, 121°C, 100%RH) Tests (MIL-STD 883, method 3015) Operating Life (temp): Latchup Testing Steady State Life (HTSSL, 5.75V, 125°C) Temperature Humidity Bias (5.5V, 85°C, 85%RH) Other: Other: Aged Bond Strength Alpha Particle Sensitivity 125°C
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PRODUCT INFORMATION QUALIFICATION SIMILARITY
Product Family: Division: Supplier's Part Number CY7B180/181 Anam, Korea Rated Speed Size/ Type Revision Size (stepping) Design Rule Fabrication Passivation Mold Assembly Volt Type Compound Line Rating Location Availability (mm/yy)
Process Line CY7B180 CY7B181 -**JC -**JC PLCC 20ns 0.8µ BiCMOS Oxynitride Sumitomo Hysol Anam, Korea >2,000V
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DEVICE RELIABILITY SUMMARY
Marketing Part: Description: CY7B180/181 PLCC Wafer Fab: Assembly: Jose, Anam, Korea
High Temperature Dynamic Operating Life (HTOL, 5.75V, 125°C) Early Failure Rate Device CY7B180/1 CY7B180 CY7B181 CY7B181 CY7B181 CY7B181 Lot# 77875/7 84447 76491/7 76493/7 80973 84439 Hours 0/400 0/766 0/140 0/237 0/425 0/100 Cumulative 0/2068
High Temperature Dynamic Operating Life (HTOL, 5.75V, 125°C) Latent Failure Rate Device CY7B180 CY7B181 CY7B181 CY7B181 Lot# 77875 76491/7 76494 80973 Hours 0/200 0/139 0/147 0/205 Hours 1000 Hours 0/200 2000 Hours 0/200 Cumulative 0/691
0/205
0/205
High Temperature Steady State Life Test (HTSSL, 5.75V, 125°C) Device CY7B180 CY7B181 CY7B181 Lot# 76491 77876 80973 Hours Hours 0/76 0/76 0/76 0/76 0/76 Hours Cumulative 0/228
Temperature Cycle -40C 125°C) Device CY7B181 CY7B181 Lot# 76494 77876 Cycles 0/45 0/45 1000 Cycles 0/45 0/45 Cumulative 0/90
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HAST (130°C, 5.5V) Device CY7B181 Lot# 76494 Hours 0/45 Autoclave (PCT, bias, 121°C, 100%RH, 15psig) Device CY7B181 CY7B181 Lot# 76494 76494 Hours 0/135 Hours 0/135 1/45 Cumulative 1/180 Lifted ball bond Cumulative 0/45
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Device Reliability Summary
BiCMOS CACHE SRAM CY7B180/1 Electrostatic Discharge Human Body Model Circuit 883, Method 3015 >+2,000V Unit >-2,000V (Highest passing voltage, +10% Guard-banded)
Latchup Testing Cypress Internal Latch-up Procedure Tests: Current Injection 200mA Trigger Socket Oscillation 7.5V 1MHz Temp 150°C
Other miscellaneous tests Current Density: Passed Alpha Particle Sensitivity: Passed
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